Search Results - "Mikhalevsky, V.A"

Wide range optical and electrical contrast modulation by laser-induced phase transitions in GeTe thin films by Eliseev, N.N., Kiselev, A.V., Ionin, V.V., Mikhalevsky, V.A., Burtsev, A.A., Pankov, M.A., Karimov, D.N., Lotin, A.A.

“…•Optical characterization of the GeTe thin films in range from 200 μm to 22000 nm for the amorphous and crystalline states.•High optical properties contrast…”
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Corrigendum to “Physical properties’ temperature dynamics of GeTe, Ge2Sb2Te5 and Ge2Sb2Se4Te1 phase change materials” [Mater. Sci. Semicond. Process. 150 (2022) 106907] by Burtsev, A.A., Eliseev, N.N., Mikhalevsky, V.A., Kiselev, A.V., Ionin, V.V., Grebenev, V.V., Karimov, D.N., Lotin, A.A.

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Controlling optical properties of GST thin films by ultrashort laser pulses series impact by Nevzorov, A.A., Mikhalevsky, V.A., Kiselev, A.V., Burtsev, A.A., Eliseev, N.N., Ionin, V.V., Lotin, A.A.

“…This paper presents optical transmission and reflection coefficients of Ge2Sb2Te5 thin films changing dynamics during the femtosecond laser radiation induced…”
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Low-loss Se-based phase-change materials for infrared photonics by Burtsev, A.A., Kiselev, A.V., Fedyanina, M.E., Eliseev, N.N., Mikhalevsky, V.A., Nevzorov, A.A., Ionin, V.V., Grebenev, V.V., Maliutin, A.M., Glebov, V.N., Novodvorsky, O.A., Lotin, A.A.

“…The work presents the results of comprehensive studies of the optical and transport properties, phase transition heats, the X-Ray diffraction and Raman spectra…”
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Physical properties’ temperature dynamics of GeTe, Ge2Sb2Te5 and Ge2Sb2Se4Te1 phase change materials by Burtsev, A.A., Eliseev, N.N., Mikhalevsky, V.A., Kiselev, A.V., Ionin, V.V., Grebenev, V.V., Karimov, D.N., Lotin, A.A.

“…The work presents the results of comprehensive studies of the electrical resistivity and optical transmission coefficient temperature dynamics, phase…”
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Two-stage conductivity switching of GST thin films induced by femtosecond laser radiation by Nevzorov, A.A., Mikhalevsky, V.A., Eliseev, N.N., Kiselev, A.V., Burtsev, A.A., Ionin, V.V., Maliutin, A.M., Khmelenin, D.N., Glebov, V.N., Lotin, A.A.

“…•Crystallization of amorphous Ge2Sb2Te5 films by femtosecond pulsed laser radiation was studied by in-situ electrical resistance measurements.•Description of…”
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Transmissivity to reflectivity change delay phenomenon observed in GeTe thin films at laser-induced reamorphization by Kiselev, A.V., Mikhalevsky, V.A., Burtsev, A.A., Ionin, V.V., Eliseev, N.N., Lotin, A.A.

“…[Display omitted] •Laser-induced phase transition of GeTe thin film coating.•High optical properties contrast for two stable laser-induced phase…”
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Engineering of high-temperature ferromagnetic Si1–Mn (x ≈ 0.5) alloyed films by pulsed laser deposition: Effect of laser fluence by Pandey, Parul, Drovosekov, A.B., Wang, M., Xu, C., Nikolaev, S.N., Chernoglazov, K.Yu, Savitsky, A.O., Kreines, N.M., Maslakov, K.I., Cherebilo, E.A., Mikhalevsky, V.A., Novodvorskii, O.A., Tugushev, V.V., Rylkov, V.V., Helm, M., Zhou, S.

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Switching the electrical properties of thin-film memristive elements based on GeTe by sequences of ultrashort laser pulses by Eliseev, N.N., Nevzorov, A.A., Mikhalevsky, V.A., Kiselev, A.V., Burtsev, A.A., Ionin, V.V., Lotin, A.A.

“…The work is devoted to the study of the characteristics of the state control of a thin-film element based on a phase-change GeTe material. The properties of…”
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Luminescence Properties of [Cd.sub.x][Zn.sub.1-x]O Thin Films by Lotin, A.A, Novodvorsky, O.A, Parshina, L.S, Khramova, O.D, Cherebylo, E.A, Mikhalevsky, V.A

“…Thin [Cd.sub.x][Zn.sub.1-x]O films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility…”
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Engineering of high-temperature ferromagnetic Si1–xMnx (x ≈ 0.5) alloyed films by pulsed laser deposition: Effect of laser fluence by Pandey, Parul, Drovosekov, A.B., Wang, M., Xu, C., Nikolaev, S.N., Chernoglazov, K.Yu, Savitsky, A.O., Kreines, N.M., Maslakov, K.I., Cherebilo, E.A., Mikhalevsky, V.A., Novodvorskii, O.A., Tugushev, V.V., Rylkov, V.V., Helm, M., Zhou, S.

“…Thin films of Si1−xMnx were deposited on Al2O3 substrate using pulsed laser deposition(PLD)technique employing time-of-flight separation of the ejected…”
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Influence of the conditions of pulsed laser deposition on the structural, electrical, and optical properties of V[O.sub.2] thin films by Novodvorsky, O.A, Parshina, L.S, Khramova, O.D, Mikhalevsky, V.A, Shcherbachev, K.D, Panchenko, V. Ya

“…The technique of pulse laser deposition with the separation of plume drops is used to produce V[O.sub.2] thin films on sapphire(0001) and silicon(111)…”
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