Search Results - "Mijlemans, P."

High quality InGaAs/AlGaAs lasers grown on Ge substrates by D'Hondt, M, Yu, Z.-Q, Depreter, B, Sys, C, Moerman, I, Demeester, P, Mijlemans, P

“…We demonstrate the feasibility of germanium wafers as a growth substrate for most electro-optic devices that are normally grown on GaAs wafers. Ge offers the…”
Get full text

AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates by Modak, P., D'Hondt, M., Delbeke, D., Moerman, I., Van Daele, P., Baets, R., Demeester, P., Mijlemans, P.

“…We demonstrate microcavity light emitting diodes (MCLEDs) emitting at 650 nm on Ge substrates. Ge has the advantage of lower cost and higher strength compared…”
Get full text

Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates by BEHET, M, DE BOECK, J, BORGHS, G, MIJLEMANS, P

Get full text

Molecular beam epitaxial growth of InAs/(Al, Ga)Sb quantum-well structures on germanium substrates by Behet, M., De Boeck, J., Borghs, G., Mijlemans, P.

“…Growth of InAs/(Al, Ga)Sb quantum-well structures was performed on germanium substrates by molecular beam epitaxy. The structural and electrical quality was…”
Get full text

Metamorphic In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on germanium substrates by van der Zanden, K., Schreurs, D., Mijlemans, P., Borghs, G.

“…We report for the first time the successful epitaxial growth and processing of high-performance metamorphic high electron mobility transistors (HEMTs) on Ge…”
Get full text

(Al)GaInP multiquantum well LEDs on GaAs and Ge by Modak, P., D’Hondt, M., Mijlemans, P., Moerman, I., van Daele, P., Demeester, P.

“…MOVPE growth of AlGaInP layers on GaAs and Ge have been demonstrated. The surface morphology of the epilayers was smooth under optimized growth conditions. The…”
Get full text

Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line by De Jaeger, B., Houssa, M., Satta, A., Kubicek, S., Verheyen, P., Van Steenbergen, J., Croon, J., Kaczer, B., Van Elshocht, S., Delabie, A., Kunnen, E., Sleeckx, E., Teerlinck, I., Lindsay, R., Schram, T., Chiarella, T., Degraeve, R., Conard, T., Poortmans, J., Winderickx, G., Boullart, W., Schaekers, M., Mertens, P.W., Caymax, M., Vandervorst, W., Van Moorhem, E., Biesemans, S., De Meyer, K., Ragnarsson, L., Lee, S., Kota, G., Raskin, G., Mijlemans, P., Autran, J.-L., Afanas'ev, V., Stesmans, A., Meuris, M., Heyns, M.

“…We report for the first time on deep sub-micron Ge pFETs with physical gate lengths down to 0.151 /spl mu/m. The devices are made using a silicon-like process…”
Get full text

Metamorphic In sub(.53)Ga sub(.47)As/In sub(.52)Al sub(.48)As HEMT's on germanium substrates by van der Zanden, K, Schreurs, D, Mijlemans, P, Borghs, G

“…We report for the first time the successful epitaxial growth and processing of high-performance metamorphic high electron mobility transistors (HEMT's) on Ge…”
Get full text

Metamorphic In0.53Ga0.47As/In0.52Al0.48 As HEMTs on germanium substrates by van der Zanden, K, Schreurs, D, Mijlemans, P, Borghs, G

“…Devices with 0.2 μm gate length display an increase of the extrinsic cut-off frequency fT from 45 GHz before, to 75 GHz after substrate removal, whereas the…”
Get full text

MetamorphicIn(0.53)Ga(0.47)As/In(0.52)Al(0.48)As HEMTs on germanium substrates by van der Zanden, K, Schreurs, D, Mijlemans, P, Borghs, G

“…We report for the first time the successful epitaxial growth and processing of high-performance metamorphic high electron mobility transistors (HEMTs) on Ge…”
Get full text

Comparative study on the performance of InAs/Al 0.2Ga 0.8Sb quantum well Hall sensors on germanium and GaAs substrates by Behet, M, De Boeck, J, Borghs, G, Mijlemans, P

“…High-quality InAs/Al 0.2Ga 0.8Sb quantum well structures grown on germanium substrates by molecular beam epitaxy (MBE) showed electron mobilities of 27,500 cm…”
Get full text

The future of high- K on pure germanium and its importance for Ge CMOS by Meuris, M., Delabie, A., Van Elshocht, S., Kubicek, S., Verheyen, P., De Jaeger, B., Van Steenbergen, J., Winderickx, G., Van Moorhem, E., Puurunen, R.L., Brijs, B., Caymax, M., Conard, T., Richard, O., Vandervorst, W., Zhao, C., De Gendt, S., Schram, T., Chiarella, T., Onsia, B., Teerlinck, I., Houssa, M., Mertens, P.W., Raskin, G., Mijlemans, P., Biesemans, S., Heyns, M.M.

“…A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO 2 layers on Ge indicate that ALCVD…”
Get full text

High-Performance InAs Quantum Well based Corbino Magnetoresistive Sensors on Germanium Substrates by Behet, Markus, De Boeck, Jo, Mijlemans, Paul, Borghs, Gustaaf

“…High-quality InAs/Al 0.2 Ga 0.8 Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy (MBE). Electron mobilities of 27,000 cm…”
Get full text

Substrate transfer: enabling technology for RF applications by Dekker, R., Dessein, K., Fock, J.-H., Gakis, A., Jonville, C., Kuijken, O.M., Michielsen, T.M., Mijlemans, P., Pohlmann, H., Schnitt, W., Timmering, C.E., Tombeur, A.M.H.

“…Substrate transfer is proposed as a wafer-scale postprocessing technology to transfer circuits processed with standard IC processing to an alternative…”
Get full text