Search Results - "Mierzwinski, M"

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  1. 1

    Health-related quality of life in abdominal wall hernia: let’s ask patients what matters to them? by Smith, O. A., Mierzwinski, M. F., Chitsabesan, P., Chintapatla, S.

    “…Introduction Quality of Life (QoL) is an important consideration in patients with abdominal wall hernia (AWH). What matters to patients and their everyday…”
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    Journal Article
  2. 2

    Novel insights into patient’s thoughts about their body image in abdominal wall hernia by Smith, O., Mierzwinski, M., Oliver-Jenkins, V., MacLeod, T., Chitsabesan, P., Chintapatla, S.

    “…Background Abdominal wall hernias (AWH) are frequently large and deforming. Despite this, little is known about how AWH impact upon body image. This study is…”
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    Journal Article
  3. 3

    Abdominal wall hernia and mental health: patients lived experiences and implications for patient care by Smith, O. A. M., Mierzwinski, M., McVey, J., Chitsabesan, P., Chintapatla, S.

    “…Background Abdominal wall hernia (AWH) affects mental health and mental health questions are frequently included within Patient-Reported Outcome Measures…”
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    Journal Article
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    Analog RF model development with Verilog-A by Troyanovsky, B., O'Halloran, P., Mierzwinski, M.

    “…Over the past several years, analog hardware description languages (AHDLs) have gained increasing acceptance in the areas of analog and RF circuit simulation…”
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    Conference Proceeding
  7. 7

    Reliability investigation of InGaP/GaAs heterojunction bipolar transistors by Bahl, S.R., Camnitz, L.H., Houng, D., Mierzwinski, M.

    Published in IEEE electron device letters (01-09-1996)
    “…During elevated-temperature bias stress, InGaP/GaAs HBT's grown by MOCVD show a medium-term degradation in current gain of about 20%, with an activation energy…”
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    Journal Article
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    Reliability investigation of InGaP/GaAs heterojunction bipolar transistors by Bahl, S.R., Camnitz, L.H., Houng, D., Mierzwinski, M., Turner, J., Lefforge, G.

    “…During elevated-temperature bias stress, InGaP/GaAs HBTs grown by MOCVD show a medium-term degradation in current gain of about 20%, with an activation energy…”
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    Conference Proceeding
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    A monolithic 0.5 to 50 GHz MODFET distributed amplifier with 6 dB gain by Perdomo, J., Mierzwinski, M., Kondoh, H., Li, C., Taylor, T.

    “…A monolithic 0.5-50-GHz distributed amplifier has been developed using a MODFET IC process to demonstrate a gain of 6.5 dB+or-0.5 dB across the frequency…”
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    Conference Proceeding
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    A backside via process for thermal resistance improvement demonstrated using GaAs HBTs by Kofol, J.S., Lin, B.J.F., Mierzwinski, M., Kim, A., Armstrong, A., Van Tuyl, R.

    “…The authors report a method for reducing the operating temperatures of GaAs-AlGaAs heterojunction bipolar transistors (HBTs) to acceptable levels, while…”
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    Conference Proceeding
  16. 16

    A pseudomorphic MODFET structure with excellent linear power performance at mm-wave range by Zhou, G.-G., Chan, K.T., Hughes, B., Mierzwinski, M., Kondoh, H.

    “…The design, fabrication, and excellent linear power performance at the millimeter-wave frequency range of a modified InGaAs channel pseudomorphic MODFET…”
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    Conference Proceeding