Search Results - "Mickevicius, R"

Enhancement-Mode Recessed Gate and Cascode Gate Junctionless Nanowire With Low-Leakage and High-Drive Current by Wong, Hiu Yung, Braga, Nelson, Mickevicius, R. V.

“…Junctionless (JL) nanowire is a promising candidate for the future technology nodes because it obviates the need for ultrasteep junction formation. However,…”
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Normally-Off GaN HFET Based on Layout and Stress Engineering by Hiu Yung Wong, Braga, Nelson, Mickevicius, R. V.

“…A novel normally-off GaN HFET based on layout and stress engineering is proposed and verified using technology CAD (TCAD) simulations. It requires no process…”
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Solitary solutions to a metastasis model represented by two systems of coupled Riccati equations by Timofejeva, I., Telksnys, T., Navickas, Z., Marcinkevicius, R., Mickevicius, R., Ragulskis, M.

“…Solitary solutions to a two-tumor metastasis model represented by a system of multiplicatively coupled Riccati equations are considered in this paper. The…”
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Solitary solutions to an androgen‐deprivation prostate cancer treatment model by Telksnys, T., Timofejeva, I., Navickas, Z., Marcinkevicius, R., Mickevicius, R., Ragulskis, M.

“…A model of androgen deprivation treatment for prostate cancer is considered in this paper. Bright/dark solitary solutions to the model are constructed using…”
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Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation by Wong, Hiu Yung, Braga, Nelson, Mickevicius, R.V.

“…TCAD simulation is calibrated to experimental IDVD, IDVG and fT data from an H-terminated diamond MISFET from the literature. With one set of self-consistent…”
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819 poster BRAIN TUMORS BRACHYTHERAPY BY USING IR 192 by Mickevicius, R, Burneckis, A, Aleknavicius, E

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Simulation of gate lag and current collapse in gallium nitride field-effect transistors by Braga, N., Mickevicius, R., Gaska, R., Shur, M. S., Khan, M. Asif, Simin, G.

“…Results of two-dimensional numerical simulations of gate lag and current collapse in GaN heterostructure field-effect transistors are presented. Simulation…”
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Design space and origin of off-state leakage in GaN vertical power diodes by Zhang, Y., Wong, H.-Y, Sun, M., Joglekar, S., Yu, L., Braga, N. A., Mickevicius, R. V., Palacios, T.

“…Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The…”
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Simulation study of single-event gate rupture using radiation-hardened stripe cell power MOSFET structures by Titus, J.L., Yen-Sheng Su, Savage, M.W., Mickevicius, R.V., Wheatley, C.F.

“…A two-dimension simulation study of single-event gate rupture (SEGR) in radiation-hardened stripe cell power MOSFETs is reported. Simulations are performed on…”
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Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV by Wong, H. Y., Braga, N., Mickevicius, R. V., Ding, F.

“…Ga 2 O 3 is a promising Wide-Band-Gap material for power electronics due to its large bandgap and inexpensive native substrate. However, due to technological…”
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Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation by Hiu Yung Wong, Braga, Nelson, Mickevicius, R. V., Jie Liu

“…Using TCAD simulation, we studied the stress effect of pseudomorphically grown Al 0.25 Ga 0.75 N barrier and passivation nitride with intrinsic stress on the…”
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TCAD calibration of USJ profiles for advanced deep sub-μm CMOS processes by Zechner, C, Matveev, D, Erlebach, A, Simeonov, S, Menialenko, V, Mickevicius, R, Foad, M, Al-Bayati, A, Lebedev, A, Posselt, M

“…For advanced technologies there is a lack of experimental data and calibrated physical models that enable accurate simulation of CMOS technologies down to…”
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Urine RNA sequencing to find biomarkers for high-risk prostate cancer prediction by Lopeta, M., Paliksa, S., Belevicius, J., Barisiene, M., Bakavicius, A., Mickevicius, R., Zilys, S., Ulys, A., Juodele, L., Jankevicius, F., Jievaltas, M., Gagilas, J.

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Simulation of gate lag and current collapse in GaN heterojunction field effect transistors by Braga, N., Mickevicius, R., Shur, M., Gaska, R., Asif Khan, M., Simin, G.

“…We present results from numerical simulations of the current collapse phenomenon in GaN heterostructure field effect transistors. Gate lag simulation results…”
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Evaluation of urine biomarkers for high risk prostate cancer diagnostics by Veneviciute, S., Lopeta, M., Paliksa, S., Gagilas, J., Barisiene, M., Bakavicius, A., Mickevicius, R., Zilys, S., Ulys, A., Juodele, L., Jankevicius, F., Jievaltas, M.

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Survival after radical prostatectomy and external beam radiotherapy for patients with high risk prostate cancer: Results of single tertiary referral hospital by Mickevicius, R, Milonas, D, Mickevicvius, L, Peciulyte, G, Jarusevicius, L, Kincius, M, Auskalnis, S, Simaska, T, Gudaniviciene, I, Smailyte, G, Jievaltas, M

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Monte Carlo simulation of THz frequency power generation in notched n +–n −–n–n + 4H-SiC structures by Zhao, Jian H, Gruzinskis, V, Mickevicius, R, Shiktorov, P, Starikov, E

“…Steady state transport and microwave power generation is theoretically investigated in 4H-SiC n +–n −–n–n + structures along c-axis by Monte Carlo Particle…”
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Acoustic-phonon scattering in a rectangular quantum wire by MICKEVICIUS, R, MITIN, V

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Negative absolute conductivity in quantum wires by MICKEVICIUS, R, MITIN, V, STROSCIO, M. A, DUTTA, M

“…The effect of negative absolute conductivity in quasi-one-dimensional quantum wire structures is obtained by the Monte Carlo simulation. This negative…”
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A physical model of the abnormal behavior of hydrogen-terminated Diamond MESFET by Hiu Yung Wong, Braga, Nelson, Mickevicius, R. V.

“…Hydrogen-terminated Diamond MESFET exhibits abnormal gate capacitance-voltage (CV) relationship, with an insulator barrier-like plateau followed by an abrupt…”
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