Search Results - "Michez, A."

South Atlantic Anomaly Evolution Seen by the Proton Flux by Ginisty, F., Wrobel, F., Ecoffet, R., Mandea, M., Michez, A., Balcon, N., Ruffenach, M., Mekki, J.

“…The SEM‐2 (Space Environment Monitor‐2) instrument embedded on the NOAA‐15 Low Earth Orbit satellite provides measurements of trapped protons in the Van Allen…”
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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET by Niskanen, K., Touboul, A. D., Germanicus, R. Coq, Michez, A., Javanainen, A., Wrobel, F., Boch, J., Pouget, V., Saigne, F.

“…The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The…”
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Forest cover correlates with good biological water quality. Insights from a regional study (Wallonia, Belgium) by Brogna, D., Dufrêne, M., Michez, A., Latli, A., Jacobs, S., Vincke, C., Dendoncker, N.

“…Forested catchments are generally assumed to provide higher quality water in opposition to agricultural and urban catchments. However, this should be tested in…”
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Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment by Niskanen, K., Coq Germanicus, R., Michez, A., Wrobel, F., Boch, J., Saigne, F., Touboul, A. D.

“…The mechanisms responsible for neutron-induced single-event burnout (SEB) in commercial silicon carbide power MOSFETs under atmospheric-like neutron spectrum…”
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Total Ionizing Dose Effect in LDMOS Oxides and Devices by Borel, T., Furic, S., Leduc, E., Michez, A., Boch, J., Touboul, A., Azais, B., Danzeca, S., Dusseau, L.

“…Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with 60 Co gamma rays…”
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Atypical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits by Borel, T., Roig, F., Michez, A., Azais, B., Danzeca, S., Roche, N. J.-H., Bezerra, F., Calvel, P., Dusseau, L.

“…LM124 operational amplifiers from three different manufacturers are irradiated with 60 Co gamma rays and neutrons. During neutrons irradiation, one of the…”
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Dose Rate Switching Technique on ELDRS-Free Bipolar Devices by Boch, J., Michez, A., Rousselet, M., Dhombres, S., Touboul, A. D., Vaille, J-R, Dusseau, L., Lorfevre, E., Chatry, N., Sukhaseum, N., Saigne, F.

“…The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS. Experimental data and modeling results are presented and discussed in terms…”
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Study of a Thermal Annealing Approach for Very High Total Dose Environments by Dhombres, S., Michez, A., Boch, J., Saigne, F., Beauvivre, S., Kraehenbuehl, D., Vaille, J.-R, Adell, P. C., Lorfevre, E., Ecoffet, R., Roig, F.

“…Total dose effect remains one challenging issue for electronics systems intended to space applications. For high total dose missions, like Jupiter missions, or…”
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Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT by Foro, L. L., Touboul, A. D., Michez, A., Wrobel, F., Rech, P., Dilillo, L., Frost, C., Saigné, F.

“…Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate…”
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Physical model for enhanced interface-trap formation at low dose rates by Rashkeev, S.N., Cirba, C.R., Fleetwood, D.M., Schrimpf, R.D., Witczak, S.C., Michez, A., Pantelides, S.T.

“…We describe a model for enhanced interface-trap formation at low dose rates due to space-charge effects in the base oxides of bipolar devices. The use of…”
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An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3/Ge(111) heterostructures by Dau, Minh-Tuan, Le Thanh, Vinh, Michez, Lisa A, Petit, Matthieu, Le, Thi-Giang, Abbes, Omar, Spiesser, Aurélie, Ranguis, Alain

“…The Mn5Ge3 compound, thanks to its room-temperature ferromagnetism, metallic character and ability to epitaxially grow on germanium, acts as a potential…”
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On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination by Privat, A., Touboul, A. D., Michez, A., Bourdarie, S., Vaille, J. R., Wrobel, F., Chatry, N., Chaumont, G., Lorfevre, E., Bezerra, F., Saigne, F.

“…This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power…”
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Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model by Guetarni, K., Touboul, A.D., Boch, J., Foro, L., Privat, A., Michez, A., Vaillé, J.R., Saigné, F.

“…•The nature of the occurred failure in an IGBT Trench Field Stop is an SEB.•The sensitive volume of the IGBT is located in the top side of the epilayer…”
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Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET by Michez, A., Boch, J., Dhombres, S., Saigné, F., Touboul, A.D., Vaillé, J.-R., Dusseau, L., Lorfèvre, E., Ecoffet, R.

“…•A new TCAD tool taking into account dose effects is presented: E.CO.R.C.E.•We model Total Ionizing Dose on power MOSFET.•Total Ionizing Dose at room…”
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Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation by Privat, A., Touboul, A. D., Michez, A., Bourdarie, S., Vaille, J. R., Wrobel, F., Arinero, R., Chatry, N., Chaumont, G., Lorfevre, E., Saigne, F.

“…Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and…”
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Tracking the evolution of magnetic ordering in Co/Ru multilayers with inhomogeneous interlayer coupling using polarised neutron reflectometry by Gonzalez, J.A., Michez, L.-A., Charlton, T.R., Hickey, B.J., Langridge, S., Marrows, C.H.

“…We report the measurement of reflected neutron intensity “hysteresis loops” from Co/Ru multilayers that have both antiferromagnetically and ferromagnetically…”
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Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption by Dau, Minh-Tuan, Thanh, Vinh Le, Le, Thi-Giang, Spiesser, Aurélie, Petit, Mathieu, Michez, Lisa A., Daineche, Rachid

“…Mn5Ge3 compound, with its room-temperature ferromagnetism and possibility to epitaxially grow on Ge, acts as a potential spin injector into group-IV…”
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New results for the dependence of the magnetoresistance of magnetic multilayers on the layer thickness by Michez, L. A, Hickey, B. J, Shatz, Smadar, Wiser, Nathan

“…We measured the dependence of the giant magnetoresistance on the thickness of the magnetic layers for a magnetic multilayer comprising two types of magnetic…”
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Anemometer based on Seebeck effect by Al khalfioui, M., Michez, A., Giani, A., Boyer, A., Foucaran, A.

“…This paper presents the realisation of anemometers based on periodic structures elaborated by flash evaporation technique on polyimide substrate using Bi 2Te…”
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Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors by Dardie, J., Boch, J., Michez, A., Guasch, C., Bouisri, S., Saigne, F., Bezerra, F., Favre, J.L.

“…The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current…”
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