Search Results - "Miasojedovas, S."

Carrier dynamics in blue and green emitting InGaN MQWs by Aleksiejūnas, R., Nomeika, K., Miasojedovas, S., Nargelas, S., Malinauskas, T., Jarašiūnas, K., Tuna, Ö., Heuken, M.

“…Spectrally and spatially‐resolved nonlinear optical techniques were combined with the photoluminescence spectroscopy to study carrier dynamics and…”
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Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique by Reklaitis, I., Kudžma, R., Miasojedovas, S., Vitta, P., Žukauskas, A., Tomašiūnas, R., Pietzonka, I., Strassburg, M.

“…An extended study of charge-carrier localization and delocalization in blue and green InGaN light-emitting diode (LED) test structures has been performed…”
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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques by Malinauskas, T., Jarašiūnas, K., Miasojedovas, S., Juršėnas, S., Beaumont, B., Gibart, P.

“…Optical monitoring of nonequilibrium carrier dynamics was performed in freestanding GaN. Four-wave mixing kinetics directly provided carrier lifetime of 5.4ns…”
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Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy by Juršėnas, S., Miasojedovas, S., Kurilčik, G., Žukauskas, A., Hageman, P. R.

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Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg by Aleksiejūnas, R., Krotkus, S., Nargelas, S., Miasojedovas, S., Juršėnas, S.

“…Light-induced transient grating and photoluminescence measurements were employed for carrier recombination studies in variously Mg doped GaN layers. Carrier…”
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High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates by MIASOJEDOVAS, S, MAUDER, C, KROTKUS, S, KADYS, A, MALINAUSKAS, T, JARASIUNAS, K, HEUKEN, M, KALISCH, H, VESCAN, A

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Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques by Juršėnas, S., Miasojedovas, S., Z˘ukauskas, A.

“…A method of GaN epilayers quality characterization based on room-temperature luminescence transient studies under deep-trap saturation regime is demonstrated…”
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Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations by Juršėnas, S., Miasojedovas, S., Žukauskas, A., Lucznik, B., Grzegory, I., Suski, T.

“…Carrier recombination and diffusion dynamics in a 100 - μ m -thick GaN grown by hydride vapor phase epitaxy on semi-insulating GaN:Mg substrate have been…”
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Optical gain in homoepitaxial GaN by Juršėnas, S., Kurilčik, N., Kurilčik, G., Miasojedovas, S., Žukauskas, A., Suski, T., Perlin, P., Leszczynski, M., Prystawko, P., Grzegory, I.

“…Optical gain in GaN epilayers, grown by metalorganic chemical-vapor deposition technique on bulk GaN substrates is studied by means of time-resolved…”
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Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth by Juršènas, S., Kuokštis, E., Miasojedovas, S., Kurilčik, G., Žukauskas, A., Chen, C. Q., Yang, J. W., Adivarahan, V., Asif Khan, M.

“…Carrier recombination dynamics in epitaxial a-plane GaN and fully coalesced epitaxial laterally overgrown (ELOG) a-plane GaN films has been studied by means of…”
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Carrier recombination under one-photon and two-photon excitation in GaN epilayers by Miasojedovas, S., Butkus, M., Juršėnas, S., Łucznik, B., Grzegory, I., Suski, T.

“…Luminescence properties of 100-μm thick GaN epilayers grown by hydride vapor phase epitaxy (HVPE) over three different substrates: high-pressure grown n-type…”
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Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates by Žukauskas, A., Kazlauskas, K., Tamulaitis, G., Pobedinskas, P., Juršėnas, S., Miasojedovas, S., Ivanov, V. Yu, Godlewski, M., Skierbiszewski, C., Siekacz, M., Franssen, G., Perlin, P., Suski, T., Grzegory, I.

“…Role of band potential roughness on luminescence decay time and stimulated emission in InGaN quantum wells (QWs) grown by rf plasma‐assisted molecular beam…”
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Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire by Miasojedovas, S., Juršėnas, S., Žukauskas, A., Ivanov, V.Yu, Godlewski, M., Leszczyński, M., Perlin, P., Suski, T.

“…Spontaneous and stimulated luminescence in highly excited InGaN/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates is reported. By…”
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Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures by Jarašiūnas, K., Aleksiejūnas, R., Malinauskas, T., Sūdžius, M., Miasojedovas, S., Juršėnas, S., Žukauskas, A., Gaska, R., Zhang, J., Shur, M. S., Yang, J. W., Kuokštis, E., Khan, M. A.

“…Time‐resolved four‐wave mixing and photoluminescence techniques have been combined for studies of MOCVD‐grown InxGa1–xN/GaN/sapphire heterostructures with…”
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Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy by Juršėnas, S., Miasojedovas, S., Kurilčik, G., Žukauskas, A., Hageman, P. R.

“…Luminescence transients has been studied in GaN grown by hydride vapor‐phase epitaxy (HVPE) under intense photoexcitation conditions. The HVPE grown GaN layer…”
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Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE by Lutsenko, E. V., Pavlovskii, V. N., Danilchyk, A. V., Osipov, K. A., Rzheutskii, N. V., Zubialevich, V. Z., Gurskii, A. L., Yablonskii, G. P., Malinauskas, T., Jarašiūnas, K., Kazlauskas, K., Juršėnas, S., Miasojedovas, S., Žukauskas, A., Dikme, Y., Kalisch, H., Jansen, R. H., Schineller, B., Heuken, M.

“…Optical properties and carrier dynamics were investigated in a set of samples grown on Si utilizing different layer combinations between the topmost GaN layer…”
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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures by Nomeika, K., Aleksiejūnas, R., Miasojedovas, S., Tomašiūnas, R., Jarašiūnas, K., Pietzonka, I., Strassburg, M., Lugauer, H.-J.

“…Localization of charge carriers is of crucial importance in InGaN light emitting devices since it governs carrier transport and ensures high radiative…”
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High-excitation luminescence properties of m-plane GaN grown on LiAlO sub(2 substrates) by Miasojedovas, S, Mauder, C, Krotkus, S, Kadys, A, Malinauskas, T, Jarasiu-Nas, K, Heuken, M, Kalisch, H, Vescan, A

“…Optically induced carrier dynamics was investigated in highly excited m-plane GaN films grown by metalorganic vapor phase epitaxy (MOVPE) on LiAlO sub(2…”
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High-excitation luminescence properties of m-plane GaN grown on LiAlO 2 substrates by Miasojedovas, S., Mauder, C., Krotkus, S., Kadys, A., Malinauskas, T., Jarašiu¯nas, K., Heuken, M., Kalisch, H., Vescan, A.

“…Optically induced carrier dynamics was investigated in highly excited m-plane GaN films grown by metalorganic vapor phase epitaxy (MOVPE) on LiAlO 2 substrates…”
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Optical monitoring of nonequilibrium carrier lifetimein freestanding GaN by time-resolved four-wave mixingand photoluminescence techniques by Malinauskas, T., Jarašiūnas, K., Miasojedovas, S., Juršėnas, S., Beaumont, B., Gibart, P.

“…Optical monitoring of nonequilibrium carrier dynamics was performed in freestanding GaN. Four-wave mixing kinetics directly provided carrier lifetime of 5.4 ns…”
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