Search Results - "Mhaisagar, Yogesh S"

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  1. 1

    Synthesis of SiOF nanoporous ultra low-k thin film by Mhaisagar, Yogesh S., Mahajan, Ashok M.

    “…In this work, we have investigated the effect of annealing temperature on physical, chemical and electrical properties of Fluorine (F) incorporated porous SiO…”
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  2. 2

    Mechanical properties of surface modified silica low-k thin films by Mhaisagar, Yogesh S., Joshi, Bhavana N., Mahajan, Ashok M.

    Published in Microelectronic engineering (01-02-2014)
    “…[Display omitted] •A sol–gel deposited low-k thin film was surface modified by using wet chemical treatment.•Change in chemical structure was analyzed by using…”
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  3. 3

    Enhancement in mechanical properties of silica low-k thin films using wet chemical technique by Mhaisagar, Yogesh S, Gaikwad, Anil S, Khairnar, Anil G, Mahajan, Ashok M

    Published in Indian journal of pure & applied physics (01-07-2016)
    “…Silica low-k films have been deposited on silicon wafer using sol-gel spin-on method. The tetraethyl orthosilicate (TEOS) has been used as a precursor…”
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  4. 4

    Surface texture modification of spin-coated SiO2 xerogel thin films by TMCS silylation by MHAISAGAR, YOGESH S, JOSHI, BHAVANA N, MAHAJAN, A M

    Published in Bulletin of materials science (01-04-2012)
    “…The SiO 2 xerogel thin films were deposited successfully by sol–gel technique via the acid-catalyzed hydrolysis and condensation of tetraethylorthosilicate…”
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  5. 5

    Synthesis and Characterization of Porogen Based Porous Low-k Thin Films by Pawar, Namrata B., Mhaisagar, Yogesh S., Gaikwad, Anil S., Mahajan, Ashok M.

    Published in SILICON (01-05-2017)
    “…The present work is focused towards the lowering of the k value of deposited SiO 2 thin films by varying solvent concentration i.e. ethanol in the range 4-10…”
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  6. 6

    Analysis of interconnect capacitance for sub nano CMOS technology using the low dielectric material by Joshi, Bhavana N., Mhaisagar, Yogesh S., Mahajan, Ashok M.

    Published in Microelectronics and reliability (01-05-2011)
    “…A vital parameter interconnect capacitance in the ULSI has been investigated in this paper. The potential and static capacitance under the metal line strip has…”
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