Search Results - "Meyer, William K."
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A Non-Aging Screen to Prevent Wearout of Ultra-Thin Dielectrics
Published in 23rd International Reliability Physics Symposium (01-03-1985)“…As MOS gate dielectrics are scaled to thinner dimensions, lognormal statistics determine the limit at which aging screens are no longer effective in reducing…”
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Conference Proceeding -
2
Model for Oxide Wearout Due to Charge Trapping
Published in 21st International Reliability Physics Symposium (01-04-1983)“…Scaling of MOS gate oxides below 200Å can result in wearout of intrinsic oxides. This paper presents studies of thin gate oxides which show that the time…”
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Conference Proceeding -
3
Redundancy Reliability
Published in 19th International Reliability Physics Symposium (01-04-1981)“…Programmable redundant row and column elements are presently being used as a yield enhancement tool on the more advanced high density memory devices. This…”
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Conference Proceeding