Search Results - "Meyer, W. E."

Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge by Igumbor, E., Dongho-Nguimdo, G. M., Mapasha, R. E., Meyer, W. E.

“…In this report, we used the hybrid density functional theory to systematically investigate the formation of substitution–interstitial complex defects formed by…”
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Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width by Omotoso, E, Paradzah, A T, Igumbor, E, Taleatu, B A, Meyer, W E, Auret, F D

“…The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky…”
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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO by Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, A., Diale, M., Nel, J.M., Meyer, W.E.

“…Temperature dependent current–voltage ( I– V) and capacitance–voltage ( C– V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range…”
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Electrical characterization of vapor-phase-grown single-crystal ZnO by Auret, F. D., Goodman, S. A., Legodi, M. J., Meyer, W. E., Look, D. C.

“…Gold Schottky-barrier diodes (SBDs) were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the…”
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Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS by Pienaar, J., Meyer, W.E., Auret, F.D., Coelho, S.M.M.

“…Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced…”
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Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts by van Schalkwyk, L., Meyer, W.E., Auret, F.D., Nel, J.M., Ngoepe, P.N.M., Diale, M.

“…Intrinsically solar-blind ultraviolet (UV) AlGaN-based Schottky photodiodes were fabricated using Iridium oxide (IrO2) as the Schottky barrier material. The Ir…”
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Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique by Ahmed, Mustafa A. M., Meyer, W. E., Nel, J. M.

“…In the present study, the Schottky diode devices based on Ce and Sm co-doped ZnO thin films were fabricated using the sol–gel spin-coating technique with Pd…”
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Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures by Ngoepe, P.N.M., Meyer, W.E., Diale, M., Auret, F.D., van Schalkwyk, L.

“…The optoelectronic characteristics of Ni/Au Schottky photodiodes based on Al0.35Ga0.65N were investigated. The transmission of the Ni (50Å)/Au (50Å) layer was…”
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Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures by Ngoepe, PNM, Meyer, WE, Diale, M, Auret, FD, van Schalkwyk, L

“…In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al0.35Ga0.65N. The effects…”
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Inductively coupled plasma induced deep levels in epitaxial n-GaAs by Auret, F.D., Janse van Rensburg, P.J., Meyer, W.E., Coelho, S.M.M., Kolkovsky, Vl, Botha, J.R., Nyamhere, C., Venter, A.

“…The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level…”
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Rare Earth Interstitials in Ge: A Hybrid Density Functional Theory Study by Igumbor, E., Andrew, R. C., Meyer, W. E.

“…In this work, the results of density functional theory calculations for rare earth (Ce, Pr, Eu, and Er) interstitials in Ge are presented. We employed the…”
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Electrical characterization of defects introduced in Ge during electron beam deposition of different metals by Auret, F. D., Coelho, S. M. M., Hayes, M., Meyer, W. E., Nel, J. M.

“…We have used deep level transient spectroscopy to characterize the defects introduced in n‐type, Sb‐doped, Ge during electron beam deposition of different…”
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Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon by Abdurrazaq, A., Meyer, W.E.

“…Density functional theory (DFT) with the Heyd-Scuseria-Ernzerhof hybrid functional was used to predict the structure, formation energy, stability and the…”
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Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium by Coelho, S.M.M., Auret, F.D., Myburg, G., Janse van Rensburg, P.J., Meyer, W.E.

“…Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP…”
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Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes by Paradzah, A. T., Omotoso, E., Legodi, M. J., Auret, F. D., Meyer, W. E., Diale, M.

“…The effect of high energy electron irradiation on Ni/4 H -SiC Schottky barrier diodes was evaluated by current–voltage ( I – V ) and capacitance–voltage ( C –…”
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Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge by AURET, F. D, COELHO, S, MEYER, W. E, NYAMHERE, C, HAYES, M, NEL, J. M

“…The authors have investigated by deep level transient spectroscopy the electron traps introduced in n-type Ge during sputter deposition of Au Schottky…”
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The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC by Omotoso, E., Auret, F. D., Igumbor, E., Tunhuma, S. M., Danga, H. T., Ngoepe, P. N. M., Taleatu, B. A., Meyer, W. E.

“…The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H -SiC Schottky barrier diodes (SBDs) have been…”
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Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE) by Igumbor, E., Ouma, C.N.M., Webb, G., Meyer, W.E.

“…In this work, we present ab‐initio calculation results of Ge di-interstitials (I2(Ge)) in the framework of the density functional theory (DFT) using the Heyd,…”
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Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences by Omotoso, E., Meyer, W.E., Auret, F.D., Diale, M., Ngoepe, P.N.M.

“…Irradiation experiments have been carried out on 1.9×1016cm−3 nitrogen-doped 4H-SiC at room temperature using 5.4MeV alpha-particle irradiation over a fluence…”
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The SRS 3D module: integrating structures, sequences and features by O'Donoghue, Seán I., Meyer, Joachim E. W., Schafferhans, Andrea, Fries, Karsten

“…In this paper we present SRS 3D, a new service that allows users to easily and rapidly find all related structures for a given target sequence; structures can…”
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