Search Results - "Mesters, S"

Size distribution of Ge islands grown on Si(001) by Goryll, M., Vescan, L., Schmidt, K., Mesters, S., Lüth, H., Szot, K.

“…Atomic force microscopy analyses were performed on Ge islands on Si(001) grown by low pressure chemical vapor deposition in the temperature range from 525 to…”
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Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique by Schöning, M.J, Schmidt, C, Schubert, J, Zander, W, Mesters, S, Kordos, P, Lüth, H, Legin, A, Seleznev, B, Vlasov, Yu.G

“…Potentiometric thin film sensors on the basis of the two different chalcogenide glass materials Ag–As–S and Cu–Ag–As–Se–Te have been prepared by means of the…”
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Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation by Mantl, S., Holländer, B., Liedtke, R., Mesters, S., Herzog, H.J., Kibbel, H., Hackbarth, T.

“…We propose a new method to fabricate strain relaxed high quality Si 1− x Ge x layers on Si by hydrogen implantation and thermal annealing. Hydrogen…”
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Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H + ion implantation by Holländer, B, Mantl, S, Liedtke, R, Mesters, S, Herzog, H.J, Kibbel, H, Hackbarth, T

“…We studied strain relaxation of pseudomorphic Si 1− x Ge x layers on Si(1 0 0) after hydrogen implantation and thermal annealing. Hydrogen implantation induces…”
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Chemical vapor deposition of silicon–germanium heterostructures by Bozzo, S, Lazzari, J.-L, Coudreau, C, Ronda, A, Arnaud d’Avitaya, F, Derrien, J, Mesters, S, Hollaender, B, Gergaud, P, Thomas, O

“…We report on the growth of SiGe/Si heterostructures in a commercial chemical vapor deposition cold-wall vertical reactor using SiH4 and GeH4 gas precursors,…”
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Structural, electrical and optical characterization of semiconducting Ru2Si3 by LENSSEN, D, CARIUS, R, MESTERS, S, GUGGI, D, BAY, H. L, MANTL, S

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Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces by Wohllebe, A., Holländer, B., Mesters, S., Dieker, C., Crecelius, G., Michelsen, W., Mantl, S.

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Vertical MSM photodiodes in silicon based on epitaxial Si/CoSi2/Si by Rüders, F., Kim, J., Hacke, M., Mesters, S., Buchal, Ch, Mantl, S.

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Beam induced phase transformations and self annealing in as-implanted iron silicides by Crecelius, G., Radermacher, K., Dieker, Ch, Mesters, S.

“…Using spatially resolved energy-loss spectroscopy, electron diffraction, and He +-ion channeling we have observed the evolution of α-Fe disilicide layers from…”
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Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique by Schubert, J., Schöning, M.J., Schmidt, C., Siegert, M., Mesters, St, Zander, W., Kordos, P., Lüth, H., Legin, A., Mourzina, Yu.G., Seleznev, B., Vlasov, Yu.G.

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Strain and misfit dislocation density in finite lateral size Si1−x Gex films grownby selective epitaxy by Holländer, B., Vescan, L., Mesters, S., Wickenhäuser, S.

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Strain and misfit dislocation density in finite lateral size Si 1− x Ge x films grownby selective epitaxy by Holländer, B., Vescan, L., Mesters, S., Wickenhäuser, S.

“…Strain and misfit dislocation density in small-area Si 1− x Ge x filmsgrown by selective low-pressure chemical vapour deposition on Si (100)have been…”
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Submicrometer patterning of epitaxial CoSi2/Si(111) by local oxidation by KLINKHAMMER, F, KAPPIUS, L, MESTERS, S, MANTL, S

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Structural, electrical and optical characterization of semiconducting Ru 2Si 3 by Lenssen, D, Carius, R, Mesters, S, Guggi, D, Bay, H.L, Mantl, S

“…Recent band structure calculations indicate, that ruthenium silicide (Ru 2Si 3) is semiconducting with a direct band gap. Electrical measurements lead to a…”
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Structural, electrical and optical characterization of semiconducting Ru sub(2)Si sub(3) by Lenssen, D, Carius, R, Mesters, S, Guggi, D, Bay, H L, Mantl, S

“…Recent band structure calculations indicate, that ruthenium silicide (Ru sub(2)Si sub(3)) is semiconducting with a direct band gap. Electrical measurements…”
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Patterning method for silicides based on local oxidation by Mantl, S., Dolle, M., Mesters, St, Fichtner, P. F. P., Bay, H. L.

“…Oxidation of CoSi2 layers on Si(100) using oxidation masks has been investigated. It is shown that local oxidation can be used to pattern the silicide layer…”
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Structural, electrical and optical characterization of semiconducting Ru sub 2 Si sub 3 by Lenssen, D, Carius, R, Mesters, S, Guggi, D, Bay, H L, Mantl, S

“…Recent band structure calculations indicate, that ruthenium silicide (Ru sub 2 Si sub 3 ) is semiconducting with a direct band gap. Electrical measurements…”
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Vertical MSM photodiodes in silicon based on epitaxial Si/CoSi 2/Si by Rüders, F., Kim, J., Hacke, M., Mesters, S., Buchal, Ch, Mantl, S.

“…We present performance data of new ultrafast metal–semiconductor–metal photodiodes, fabricated by Si/CoSi 2 layer growth on (100) and (111) silicon. The design…”
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Growth and structural characterization of semiconducting Ru2Si3 by LENSSEN, D, BAY, H. L, MESTERS, S, DIEKER, C, GUGGI, D, CARIUS, R, MANTL, S

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Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100) by MANTL, S, HACKE, M, BAY, H. L, KAPPIUS, L, MESTERS, S

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