Search Results - "Mestanza, S.N.M."

Effects of temperature and deposition time on the structural and optical properties of Si1−Ge nanoparticles grown by low pressure chemical vapor deposition by Mederos, M., Mestanza, S.N.M., Doi, I., Diniz, J.A.

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Effects of temperature and deposition time on the structural and optical properties of Si1−xGex nanoparticles grown by low pressure chemical vapor deposition by Mederos, M., Mestanza, S.N.M., Doi, I., Diniz, J.A.

“…The structural and optical properties of Si1−xGex nanoparticles were studied in this work. The samples were grown by the low pressure chemical vapor deposition…”
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Germanium nanoparticles grown at different deposition times for memory device applications by Mederos, M., Mestanza, S.N.M., Lang, R., Doi, I., Diniz, J.A.

“…In the present work, circular Metal-Oxide-Semiconductor capacitors with 200μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are…”
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Influence of nucleation parameters in the spatial distribution of the Ge nanocrystals formed by LPCVD by Marins, E.S., Mestanza, S.N.M., Doi, I.

“…In this work, we study the nucleation stage that precedes the growth of Ge nanostructure (ns) on SiO 2 matrix by low-pressure chemical vapor deposition…”
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Laser reflectometry applied to the in-situ etching control in an electron cyclotron resonance plasma system by Mestanza, S.N.M., Diniz, J.A., Frateschi, N.C.

“…ECR BC13 etching of InGaP-GaAs-InGaAs quantum well laser structures was performed to produce vertical walls with good morphology. Laser reflectometry shows a…”
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High performance active pixel sensors fabricated in a standard 2.0 /spl mu/m CMOS technology by Mestanza, S.N.M., Jimenez, H.G., Silva, I.F., Diniz, J.A., Doi, I., Swart, J.W.

“…This paper reports the development of a CMOS active pixel sensor using a good performance readout circuit. The sensor element is a photodiode implemented with…”
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Synthesis of Ge Nanocrystals Grown by Ion Implantation and Subsequent Annealing by Mestanza, S.N.M., Swart, J.W., Doi, I., Frateschi, N.C.

“…Ge Nanocrystallites (nc-Ge) have been formed by 250 keV Ge +74 implantation at fluences of [0.5; 0.8; 1; 2; 3; 4]times10 16 atoms/cm 2 into 300-nm-thick SiO 2…”
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InGaAs/GaAs/InGaP quantum well laser with etched mirrors obtained by electron cyclotron resonance plasma by Mestanza, S.N.M., Von Zuben, A.A., Frateschi, N.C., Bettini, J., de Carvalho, M.M.G.

“…InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J/sub tr/=150 A/cm/sup 2/ and…”
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