Search Results - "Merz, James L."

Laser-Induced Noninvasive Vascular Injury Models in Mice Generate Platelet- and Coagulation-Dependent Thrombi by Rosen, Elliot D., Raymond, Sylvain, Zollman, Amy, Noria, Francisco, Sandoval-Cooper, Mayra, Shulman, Alexis, Merz, James L., Castellino, Francis J.

“…A minimally invasive laser-induced injury model is described to study thrombus development in mice in vivo. The protocol involves focusing the beam of an…”
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Near-field scanning optical microscopy of colloidal CdSe nanowires by Mintairov, Alexander M., Herzog, Joseph, Kuno, Masaru, Merz, James L.

“…We have developed a nano‐optical technique using diffraction‐limited far‐field fluorescence monitoring of near‐field scanning optical microscopy (NSOM)…”
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Quantum-dot cellular automata: computing with coupled quantum dots by POROD, WOLFGANG, LENT, CRAIGS, BERNSTEIN, GARY H., ORLOV, ALEXEI O., HAMLANI, ISLAMSHA, SNIDER, GREGORY L., MERZ, JAMES L.

“…We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. Boolean logic functions may be implemented in specific…”
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Quantum-Dot Cellular Automata: Line and Majority Logic Gate by Snider, Gregory L., Orlov, Alexei O., Amlani, Islamshah, Bernstein, Gary H., Lent, Craig S., Merz, James L., Porod, Wolfgang

“…An introduction to the operation of quantum-dot cellular automata is presented, along with recent experimental results. Quantum-dot cellular automata (QCA) is…”
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Quantum Wires and Dots Made by Man and by God: A Peek into the Optics Toolbox by Merz, James L.

“…In this paper a number of examples will be provided which describe the kind of information available from optical investigations of low-dimensional quantum…”
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Angled etching of GaAs/AlGaAs by conventional Cl2 reactive ion etching by TAKAMORI, T, COLDREN, L. A, MERZ, J. L

“…Angled etching of GaAs and GaAs/AlGaAs double heterostructures was achieved in a conventional Cl2 reactive ion etching system. A new angled holder, which has a…”
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GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence by GRIFFITHS, G, MOHOMMED, K, SUBBANA, S, KROEMER, H, MERZ, J. L

“…Multiquantum well structures of GaSb wells down to 12-Å width, separated by 120-Å AlSb barriers, were grown by molecular beam epitaxy, and their…”
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Lasing characteristics of a continuous-wave operated folded-cavity surface-emitting laser by TAKAMORI, T, COLDREN, L. A, MERZ, J. L

“…Room-temperature continuous-wave operation of a folded-cavity surface-emitting AlGaAs/GaAs laser with transverse junction stripe structure, which has a…”
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Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load-locked system by ALLEN VAWTER, G, COLDREN, L. A, MERZ, J. L, HU, E. L

“…Reactive ion etching was used for etching laser facets of GaAs/AlGaAs transverse junction stripe lasers. A new load-locked reactive ion etching system was…”
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Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy by GLAESSER, A. S, MERZ, J. L, NAHORY, R. E, TAMARGO, M. C

“…Fabrication of the first molecular beam epitaxy grown ZnSe/GaAs heterostructure bipolar transistor (HBT) is described. The ZnSe/GaAs heterointerface is…”
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Unique top-driven low-threshold lasers by impurity-induced disordering by Zou, W.-X., Law, K.-K., Wang, L.-C., Merz, J.L., Hager, H.E., Hong, C.-S.

“…Top-driven lasers have been fabricated by impurity-induced disordering (IID). Compared with conventional top-driven lasers, that is, transverse-junction-stripe…”
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Effect of rapid thermal annealing for the compositional disordering of Si-implanted AlGaAs/GaAs superlattices by KOBAYASHI, J, FUKUNAGA, T, ISHIDA, K, NAKASHIMA, H, FLOOD, J. D, GAD BAHIR, MERZ, J. L

“…We have investigated the effect of rapid thermal annealing (RTA) for the compositional disordering of Si-implanted AlGaAs/GaAs superlattices (SL) in comparison…”
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Monolithically integrated transverse-junction-stripe laser with an external waveguide in GaAs/AlGaAs by Vawter, G.A., Merz, J.L., Coldren, L.A.

“…This device consists of a five-layer transverse-junction-stripe laser structure monolithically integrated with an external three-layer waveguide. The…”
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Study of temperature dependent hydrogenation on near‐surface strained quantum wells by Chang, Ying‐Lan, Krishnamurthy, Mohan, Tan, I‐Hsing, Hu, Evelyn L., Merz, James L., Petroff, Pierre M., Frova, A., Emiliani, V.

“…The incorporation of hydrogen by ion‐gun irradiation into near‐surface and deeply embedded In0.13Ga0.87As/GaAs strained quantum wells (QWs) has been studied by…”
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Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers by RYOU, Jae-Hyun, DUPUIS, Russell D, REDDY, C. V, NARAYANAMURTI, Venkatesh, MATHES, David T, HULL, Robert, MINTAIROV, Alexander, MERZ, James L

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Growth and characterizations of InP self-assembled quantum dots embedded in InAlP grown on GaAs substrates by Ryou, J-H, Dupuis, R D, Reddy, C V, Narayanamurti, V, Mathes, D T, Hull, R, Mintairov, A, Merz, J L

“…We report the characteristics of InP self-assembled quantum dots embedded in In sub(0.5)Al sub(0.5)P on GaAs substrates grown by metalorganic chemical vapor…”
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Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates by Ryou, Jae-Hyun, Dupuis, Russell D., Reddy, C. V., Narayanamurti, Venkatesh, Mathes, David T., Hull, Robert, Mintairov, Alexander, Merz, James L.

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Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion by Itaya, Kazuhiko, Mondry, Mark J., Floyd, Philip D., Coldren, Larry A., Merz, James L.

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Optical Diagnostics of Semiconductors by Fouquet, J.E., Merz, J.L.

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Low-threshold InGaAs/GaAs strained-layer ridge waveguide surface emitting lasers with two 45° angle etched internal total reflection mirrors by CHIH-PING CHAO, KWOK-KEUNG LAW, MERZ, J. L

“…A new type of in-plane surface emitting laser structure with two 45° mirrors has been demonstrated. The device is a ridge waveguide laser with total reflection…”
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