Search Results - "Mertens, P.W"

Leaching and drying marks on photoresist-coated substrates by Belmiloud, N., Tamaddon, A.H., Mertens, P.W., Struyf, H.

“…Our study shows that the contact line dynamics creates critical issues in ultra-clean process for the drying step. There are 3 steps in the formation of…”
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Chemical and structural modifications in a 193-nm photoresist after low- k dry etch by Kesters, E., Claes, M., Le, Q.T., Lux, M., Franquet, A., Vereecke, G., Mertens, P.W., Frank, M.M., Carleer, R., Adriaensens, P., Biebuyk, J.J., Bebelman, S.

“…Wet processes are gaining renewed interest for the removal of post-etch photoresist on porous dielectrics in semiconductor manufacturing. However,…”
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ToF–SIMS and XPS study of ion implanted 248nm deep ultraviolet (DUV) photoresist by Franquet, A., Tsvetanova, D., Conard, T., Vos, R., Vereecke, G., Mertens, P.W., Heyns, M.M., Vandervorst, W.

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Influence of gasification on the performance of a 1MHz nozzle system in megasonic cleaning by Hauptmann, M., Brems, S., Camerotto, E., Zijlstra, A., Doumen, G., Bearda, T., Mertens, P.W., Lauriks, W.

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An Analytical Model to Describe the Efficiency of an Immersion Rinsing Process by Wim Fyen, Mertens, P.W.

“…In this paper, a simple model is presented, describing an immersion rinsing process for flat solid substrates (e.g., semiconductor wafers). It is assumed that…”
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Validation of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers by Hellin, D., Rip, J., Arnauts, S., De Gendt, S., Mertens, P.W., Vinckier, C.

“…The combination of vapor phase decomposition–droplet collection (VPD–DC) with total reflection-X-ray fluorescence spectrometry (TXRF) is a well-established…”
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Use of Surface Haze for Evaluation of Photoresist Residue Removal Efficiency by Halder, S., Vos, R., Masayuki, W., Kenis, K., Bearda, T., Radovanovic, S., Dighe, P., Leunissen, L.H.A., Mertens, P.W.

“…A new method for the fast evaluation of photoresist residue removal efficiency is discussed in this paper. In this method ldquohazerdquo which is the…”
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Physical forces exerted by microbubbles on a surface in a traveling wave field by Brems, S., Hauptmann, M., Camerotto, E., Mertens, P.W., Heyns, M., Struyf, H., De Gendt, S.

“…•We study the bubble activity in a traveling wave field in a well controlled system.•We examine the physical force generated by microbubbles on a surface.•The…”
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Influence of gasification on the performance of a 1 MHz nozzle system in megasonic cleaning by Hauptmann, M., Brems, S., Camerotto, E., Zijlstra, A., Doumen, G., Bearda, T., Mertens, P.W., Lauriks, W.

“…Single-wafer cleaning based on megasonic nozzle systems can be used for removing nano-particles. An optimized cleaning process must deliver a high degree of…”
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ToF–SIMS and XPS study of ion implanted 248 nm deep ultraviolet (DUV) photoresist by Franquet, A., Tsvetanova, D., Conard, T., Vos, R., Vereecke, G., Mertens, P.W., Heyns, M.M., Vandervorst, W.

“…Arsenic implanted 248 nm DUV photoresist films were characterized by ToF–SIMS and XPS analysis methods. The effect of the implant dose and energy on the…”
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Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures by DEPAS, M, VERMEIRE, B, MERTENS, P. W, VAN MEIRHAEGHE, R. L, HEYNS, M. M

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Effect of extreme surface roughness on the electrical characteristics of ultra-thin gate oxides by Houssa, M, Nigam, T, Mertens, P.W, Heyns, M.M

“…The effect of extreme surface roughness on the electrical characteristics and gate oxide integrity of MOS (metal–oxide–semiconductor) capacitors with…”
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The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them by Verhaverbeke, S., Meuris, M., Mertens, P.W., Heyns, M.M., Philipossian, A., Graf, D., Schnegg, A.

“…The effect of metallic contamination on the dielectric breakdown of thermal oxide layers is investigated. Wafers were intentionally contaminated with Ca, Zn,…”
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Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch-total reflection X-ray fluorescence spectrometry by Hellin, D, Bearda, T, Zhao, C, Raskin, G, Mertens, P.W, De Gendt, S, Heyns, M.M, Vinckier, C

“…An analysis methodology for the metallic contamination control of Ge wafer substrates has been developed and evaluated for six elements (K, Ca, Cr, Fe, Ni and…”
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Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers by Hellin, D., Geens, V., Teerlinck, I., Van Steenbergen, J., Rip, J., Laureyn, W., Raskin, G., Mertens, P.W., De Gendt, S., Vinckier, C.

“…Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The…”
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The future of high- K on pure germanium and its importance for Ge CMOS by Meuris, M., Delabie, A., Van Elshocht, S., Kubicek, S., Verheyen, P., De Jaeger, B., Van Steenbergen, J., Winderickx, G., Van Moorhem, E., Puurunen, R.L., Brijs, B., Caymax, M., Conard, T., Richard, O., Vandervorst, W., Zhao, C., De Gendt, S., Schram, T., Chiarella, T., Onsia, B., Teerlinck, I., Houssa, M., Mertens, P.W., Raskin, G., Mijlemans, P., Biesemans, S., Heyns, M.M.

“…A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO 2 layers on Ge indicate that ALCVD…”
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Soft breakdown in very thin Ta 2O 5 gate dielectric layers by Houssa, M, Mertens, P.W, Heyns, M.M, Jeon, J.S, Halliyal, A, Ogle, B

“…The time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors with 6 nm and 8 nm Ta 2O 5 gate dielectric layers is investigated. During…”
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Alkaline cleaning of silicon wafers: additives for the prevention of metal contamination by Martin, A.R., Baeyens, M., Hub, W., Mertens, P.W., Kolbesen, B.O.

“…The paper presents a new strategy for cleaning of silicon wafers. A novel class of chelating agents added to alkaline cleaning mixtures provides promising…”
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Soft breakdown in very thin Ta2O5 gate dielectric layers by Houssa, M, Mertens, P.W, Heyns, M.M, Jeon, J.S, Halliyal, A, Ogle, B

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X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides by Houssa, M., De Gendt, S., de Bokx, P., Mertens, P.W., Heyns, M.M.

“…During X-ray irradiation of MOS devices, interface states as well as bulk electron and hole traps are generated at the Si SiO 2 interface and in the SiO 2…”
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