Search Results - "Mergens, Markus"

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  1. 1

    ESD protection solutions for high voltage technologies by Keppens, Bart, Mergens, Markus P.J., Trinh, Cong Son, Russ, Christian C., Van Camp, Benjamin, Verhaege, Koen G.

    Published in Microelectronics and reliability (01-05-2006)
    “…There is a trend to revive mature technologies while including high voltage options. ESD protection in those technologies is challenging due to narrow ESD…”
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    Journal Article Conference Proceeding
  2. 2

    Automotive High-Speed Interfaces: Future Challenges for System-level HV-ESD Protection and First- Time-Right Design by Bub, Sergej, Mergens, Markus, Hardock, Andreas, Holland, Steffen, Hilbrink, Ayk

    “…This paper describes future design challenges of discrete system-level ESD protection (high-voltage, low-capacitance) of automotive high-speed data links such…”
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    Conference Proceeding
  3. 3

    Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology by Rigato, Matteo, Fleury, Clement, Schwarz, Benedikt, Mergens, Markus, Bychikhin, Sergey, Simburger, Werner, Pogany, Dionyz

    Published in IEEE transactions on electron devices (01-03-2018)
    “…The operation of stacked MOSFET circuit for RF switch application under electrostatic discharge (ESD) conditions is studied by transmission line pulse (TLP)…”
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    Journal Article
  4. 4

    High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation by Mergens, Markus P.J., Russ, Christian C., Verhaege, Koen G., Armer, John, Jozwiak, Phillip C., Mohn, Russ

    Published in Microelectronics and reliability (01-07-2003)
    “…This paper presents a novel Silicon Controlled Rectifier (SCR) for power line and local I/O ESD protection. The High holding current SCRs (HHI-SCR) exhibits a…”
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    Journal Article
  5. 5

    ESD-level circuit simulation impact of interconnect RC-delay on HBM and CDM behavior by Mergens, Markus P.J, Wilkening, Wolfgang, Kiesewetter, Gerhard, Mettler, Stephan, Wolf, Heinrich, Hieber, Jürgen, Fichtner, Wolfgang

    Published in Journal of electrostatics (2002)
    “…An extraction method for the distributed, parasitic RC-elements of MOS single- and multi-fingers is introduced by deducing a rule of thumb for an effective…”
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    Journal Article
  6. 6
  7. 7

    Analysis of lateral DMOS power devices under ESD stress conditions by Mergens, M.P.J., Wilkening, W., Mettler, S., Wolf, H., Stricker, A., Fichtner, W.

    Published in IEEE transactions on electron devices (01-11-2000)
    “…The physical mechanisms specific for 40 V LDMOS power transistors under ESD stress (gate grounded/coupled) are investigated in detail by transmission line…”
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    Journal Article
  8. 8
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  10. 10

    Advanced SCR ESD protection circuits for CMOS/SOI nanotechnologies by Mergens, M.P.J., Marichal, O., Thijs, S., Van Camp, B., Russ, C.C.

    “…This paper reviews the application of SCR-based ESD protection circuits in advanced CMOS/SOI technologies. The devices are integrated in a flexible modular…”
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    Conference Proceeding
  11. 11

    Modular approach of a high current MOS compact model for circuit-level ESD simulation including transient gate-coupling behaviour by Mergens, Markus, Wilkening, Wolfgang, Mettler, Stephan, Wolf, Heinrich, Fichtner, Wolfgang

    Published in Microelectronics and reliability (2000)
    “…A novel modular strategy for highly flexible modeling of ESD-capable MOS compact models is introduced. This high current MOS model comprises the important…”
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    Journal Article
  12. 12

    Novel design of driver and ESD transistors with significantly reduced silicon area by Verhaege, Koen G, Mergens, Markus, Russ, Christian, Armer, John, Jozwiak, Phillip

    Published in Microelectronics and reliability (2002)
    “…This paper presents three novel design techniques, which combined fulfill all major requirements posed on large driver and electrostatic discharge (ESD)…”
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    Journal Article
  13. 13

    ESD protection circuit design for ultra-sensitive IO applications in advanced sub-90nm CMOS technologies by Mergens, M., Wybo, G., Van Camp, B., Keppens, B., De Ranter, F., Verhaege, K., Jozwiak, P., Armer, J., Russ, C.

    “…This paper presents a protection strategy for ultra-sensitive I/O containing thin gate oxides, while combining two complementary ESD design approaches: (1)…”
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    Conference Proceeding
  14. 14

    Characterization and optimization of a bipolar ESD-device by measurements and simulations by Stricker, Andreas D., Mettler, Stephan, Wolf, Heinrich, Mergens, Markus, Wilkening, Wolfgang, Gieser, Horst, Fichtner, Wolfgang

    Published in Microelectronics and reliability (01-11-1999)
    “…The design of ESD (electro-static discharge) protection structures can be significantly shortened by using thermo-electrical device simulations. In many cases…”
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    Journal Article
  15. 15

    ESD protection considerations in advanced high-voltage technologies for automotive by Mergens, M.P.J., Mayerhofer, M.T., Willemen, J.A., Stecher, M.

    “…This paper discusses challenges and solutions of automotive ESD protection design in a reliability driven industry. Various ESD/EMI specifications are…”
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    Conference Proceeding
  16. 16

    ESD protection solutions for high voltage technologies by Keppens, B., Mergens, M.P.J., Cong Son Trinh, Russ, C.C., Van Camp, B., Verhaege, K.G.

    “…There is a trend to revive mature technologies while including high voltage options. ESD protection in those technologies is challenging due to narrow ESD…”
    Get full text
    Conference Proceeding
  17. 17

    High Holding Current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation by Mergens, Markus P.J., Russ, Christian C., Verhaege, Koen G., Armer, John, Jozwiak, Phillip C., Mohn, Russ

    “…This paper presents a novel SCR for power line and local I/O ESD protection. The HHI-SCR exhibits a dual ESD clamp characteristic: low-current high-voltage…”
    Get full text
    Conference Proceeding
  18. 18

    Modular approach of a high current MOS compact model for circuit-level ESD simulation including transient gate coupling behavior by Mergens, M., Wilkening, W., Mettler, S., Wolf, H., Fichtner, W.

    “…A novel modular strategy for highly flexible modeling of ESD-capable MOS compact models is introduced. These high current MOS models comprise the important…”
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    Conference Proceeding
  19. 19

    Active-source-pump (ASP) technique for ESD design window expansion and ultra-thin gate oxide protection in sub-90nm technologies by Mergens, M., Armer, J., Jozwiak, P., Keppens, B., De Ranter, F., Verhaege, K., Kumar, R.

    “…This paper presents a novel active-source-pump (ASP) circuit technique to significantly lower the ESD sensitivity of ultrathin gate inputs in advanced sub-90nm…”
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    Conference Proceeding