Search Results - "Merbeth, T."

Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities by Naik, V. B., Lim, J. H., Yamane, K., Kwon, J., B., Behin-Aein, Chung, N. L., K, S., Hau, L. Y., Chao, R., Chiang, C., Huang, Y., Pu, L., Otani, Y., Jang, S.H., Balasankaran, N., Neo, W. P., Ling, T., Ting, J. W., Yoon, H., Mueller, J., Pfefferling, B., Kallensee, O., Merbeth, T., Seet, C.S., Wong, J., You, Y. S., Soss, S., Chan, T. H., Siah, S. Y.

“…We present a reliable magnetic tunnel junction (MTJ) TDDB model using 40Mb 22FDX ® STT-MRAM at sub-PPM failure rate. This model is based on the precise…”
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Embedded STT-MRAM for Automotive Applications by Muller, J., Pfefferling, B., Merbeth, T., Otani, Y., Hazen, D. Sanchez, Hula, T., Mansueto, M., Titova, A., Ramasubramanian, L., Grimm, C. V.-B., Weisheit, M., Wolf, G., Kriegerstein, V., Vogel, A., Scharf, P., Wang, Y., Huang, Y., Komma, V. S., Sankar, R. Uma, Yoon, H., Kallensee, O., Naik, V. B., Soss, S.

“…Here we summarize the technological requirements and challenges on the road towards an automotive capable embedded 22FDX ® STT-MRAM solution. Especially…”
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STT-MRAM Product Reliability and Cross-Talk by Naik, V. B., Yamane, K., Kwon, J., Lim, J.H., Balasankaran, N., Chung, N.L., Hau, L.Y., Chao, R., Chiang, C., Huang, Y., Pu, L., Ma, L., Meng, C., Otani, Y., Zhang, L., Jang, S.H., Ling, T., Ting, J.W., Yoon, H., Mueller, J., Pfefferling, B., Kallensee, O., Merbeth, T., Seet, C.S., Wong, J., You, Y.S., Soss, S., Chan, T.H., Siah, S.Y.

“…STT-MRAM has been showcased to be a viable solution to replace eFlash and SRAM technologies. With the increasing demand for connected edge computing and…”
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STT-MRAM: A Robust Embedded Non-Volatile Memory with Superior Reliability and Immunity to External Magnetic Field and RF Sources by Naik, V. B., Yamane, K., Kwon, J., K, S., Lim, J. H., Ali, Z., Behin-Aein, B., Chung, N. L., Hau, L. Y., Chao, R., Chiang, C., Huang, Y., Pu, L., Otani, Y., Dixit, H., Jang, S. H., Balasankaran, N., Tan, F., Neo, W. P., Goh, L. C., Toh, E. H., Ling, T., Ting, J. W., Yoon, H., Congedo, G., Mueller, J., Pfefferling, B., Kallensee, O., Vogel, A., Merbeth, T., Seet, C. S., Wong, J., Bordelon, J., You, Y. S., Soss, S., Chan, T. H., Quek, E., Siah, S. Y.

“…We report STT-MRAM's robustness, superior reliability and immunity performance to external magnetic field and RF sources for next-generation embedded-MRAM…”
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JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications by Naik, V. B., Yamane, K., Lee, T.Y., Kwon, J., Chao, R., Lim, J.H., Chung, N.L., Behin-Aein, B., Hau, L.Y., Zeng, D., Otani, Y., Chiang, C., Huang, Y., Pu, L., Jang, S.H., Neo, W.P., Dixit, H., Goh, S. K L. C., Toh, E. H., Ling, T., Hwang, J., Ting, J.W., Low, R., Zhang, L., Lee, C.G., Balasankaran, N., Tan, F., Gan, K. W., Yoon, H., Congedo, G., Mueller, J., Pfefferling, B., Kallensee, O., Vogel, A., Kriegerstein, V., Merbeth, T., Seet, C.S., Ong, S., Xu, J., Wong, J., You, Y.S., Woo, S.T., Chan, T.H., Quek, E., Siah, S. Y.

“…We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having…”
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Short-flow test chip utilizing fast testing for defect density monitoring in 45nm by Karthikeyan, M., Cote, W., Medina, L., Shiling, E., Gasasira, A., Henning, A., Ferrante, W., Craig, M., Merbeth, T.

“…A comprehensive 45 nm short-flow test chip was designed and is currently used to improve defect-limited yield. In a novel development to reduce test time, the…”
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