Search Results - "Menczigar, U."

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    Single-crystal Sn/Ge superlattices on Ge substrates : growth and structural properties by WEGSCHEIDER, W, EBERL, K, MENCZIGAR, U, ABSTREITER, G

    Published in Applied physics letters (27-08-1990)
    “…Short-period strained-layer α-Sn/Ge superlattices lattice matched to Ge(001) substrates have been synthesized for the first time. The thin, tetragonally…”
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    Journal Article
  2. 2

    Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements by Kaniava, A., Rotondaro, A. L. P., Vanhellemont, J., Menczigar, U., Gaubas, E.

    Published in Applied physics letters (25-12-1995)
    “…Carrier recombination centers related with iron complexes in p-type silicon are studied by microwave and light-induced absorption techniques. Both thermal- and…”
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    Journal Article
  3. 3

    Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy by Brunner, J., Nützel, J., Gail, M., Menczigar, U., Abstreiter, G.

    “…Band gap luminescence from pseudomorphic Si/Si1−x Ge x /Si quantum wells grown by solid source molecular beam epitaxy is studied for a composition range from…”
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    Conference Proceeding Journal Article
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    Electro‐ and photoluminescence studies from ultrathin Si m Ge n superlattices by Presting, H., Menczigar, U., Kibbel, H.

    “…We have observed strong photoluminescence signals in the near infrared (hν∼0.8 eV) from short‐period Si m Ge n strained layer superlattices (SLS) by growing…”
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    Conference Proceeding
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