Search Results - "Memisevic, Elvedin"

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade by Memisevic, Elvedin, Hellenbrand, Markus, Lind, Erik, Persson, Axel R, Sant, Saurabh, Schenk, Andreas, Svensson, Johannes, Wallenberg, Reine, Wernersson, Lars-Erik

“…Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large…”
Get full text

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates by Johansson, Sofia, Memisevic, Elvedin, Wernersson, Lars-Erik, Lind, Erik

“…We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation…”
Get full text

III-V Heterostructure Nanowire Tunnel FETs by Lind, Erik, Memisevic, Elvedin, Dey, Anil W., Wernersson, Lars-Erik

“…In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model…”
Get full text

Scaling of Vertical InAs-GaSb Nanowire Tunneling Field-Effect Transistors on Si by Memisevic, Elvedin, Svensson, Johannes, Hellenbrand, Markus, Lind, Erik, Wernersson, Lars-Erik

“…We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling…”
Get full text

Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs by Hellenbrand, Markus, Memisevic, Elvedin, Berg, Martin, Kilpi, Olli-Pekka, Svensson, Johannes, Wernersson, Lars-Erik

“…We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel field-effect transistors (TFETs), which help to…”
Get full text

InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors by Memisevic, Elvedin, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

“…Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in…”
Get full text

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects by Saeidi, Ali, Rosca, Teodor, Memisevic, Elvedin, Stolichnov, Igor, Cavalieri, Matteo, Wernersson, Lars-Erik, Ionescu, Adrian M

“…Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of…”
Get full text

Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMIN of 35 mV/Decade by Memisevic, Elvedin, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

“…We present experimental data from vertical InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors with channel diameter scaled down to 10 nm and ability…”
Get full text

Molybdenum nanopillar arrays: Fabrication and engineering by Maduro, Louis, de Boer, Charles, Zuiddam, Marc, Memisevic, Elvedin, Conesa-Boj, Sonia

“…We report on the fabrication of molybdenum (Mo) nanopillar (NP) arrays with NP diameters down to 75 nm by means of deep-reactive ion etching at cryogenic…”
Get full text

Capacitance Measurements in Vertical III-V Nanowire TFETs by Hellenbrand, Markus, Memisevic, Elvedin, Svensson, Johannes, Krishnaraja, Abinaya, Lind, Erik, Wernersson, Lars-Erik

“…By measuring scattering parameters over a wide range of bias points, we study the intrinsic gate capacitance as well as the charge partitioning of vertical…”
Get full text

Single‐Shot Fabrication of Semiconducting–Superconducting Nanowire Devices by Borsoi, Francesco, Mazur, Grzegorz P., van Loo, Nick, Nowak, Michał P., Bourdet, Léo, Li, Kongyi, Korneychuk, Svetlana, Fursina, Alexandra, Wang, Ji‐Yin, Levajac, Vukan, Memisevic, Elvedin, Badawy, Ghada, Gazibegovic, Sasa, van Hoogdalem, Kevin, Bakkers, Erik P. A. M., Kouwenhoven, Leo P., Heedt, Sebastian, Quintero‐Pérez, Marina

“…Semiconducting–superconducting hybrids are vital components for the realization of high‐performance nanoscale devices. In particular,…”
Get full text

Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S MIN of 35 mV/Decade by Memisevic, Elvedin, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

“…We present experimental data from vertical InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors with channel diameter scaled down to 10 nm and ability…”
Get full text

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor by Memisevic, E., Lind, E., Hellenbrand, M., Svensson, J., Wernersson, L.-E

“…We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors (TFETs) by comparing the subthreshold swing and the…”
Get full text

Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs by Krishnaraja, Abinaya, Svensson, Johannes, Memisevic, Elvedin, Zhu, Zhongyunshen, Persson, Axel R, Lind, Erik, Wallenberg, Lars Reine, Wernersson, Lars-Erik

“…Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge…”
Get full text

Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade by Hellenbrand, Markus, Memisevic, Elvedin, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

“…Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by…”
Get full text

RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz by Johansson, Sofia, Memisevic, Elvedin, Wernersson, Lars-Erik, Lind, Erik

“…We present RF characterization of vertical gateall- around InAs nanowire MOSFETs integrated on Si substrates with peak f(t) = 142 GHz and f(max) = 155 GHz,…”
Get full text

Effect of Gate Oxide Defects on Tunnel Transistor RF Performance by Hellenbrand, M., Memisevic, E., Svensson, J., Krishnaraja, A., Lind, E., Wernersson, L.-E.

“…Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we…”
Get full text

RF characterization of vertical InAs nanowire MOSFETs with ft and fmax above 140 GHz by Johansson, Sofia, Memisevic, Elvedin, Wernersson, Lars-Erik, Lind, Erik

“…We present RF characterization of vertical gate-all-around InAs nanowire MOSFETs integrated on Si substrates with peak f t = 142 GHz and f max = 155 GHz,…”
Get full text

Trap-Aware Compact Modeling and Power-Performance Assessment of III-V Tunnel FET by Xiang, Yang, Yakimets, Dmitry, Sant, Saurabh, Memisevic, Elvedin, Bardon, Marie Garcia, Verhulst, Anne S., Parvais, Bertrand, Schenk, Andreas, Wernersson, Lars-Erik, Groeseneken, Guido

“…We report, for the first time, on a SPICE simulation study of the circuit-level power-performance impact of device traps in a state-of-the-art III-V…”
Get full text

Single-shot fabrication of semiconducting-superconducting nanowire devices by Borsoi, Francesco, Mazur, Grzegorz P, van Loo, Nick, Nowak, Michał P, Bourdet, Léo, Li, Kongyi, Korneychuk, Svetlana, Fursina, Alexandra, Memisevic, Elvedin, Badawy, Ghada, Gazibegovic, Sasa, van Hoogdalem, Kevin, Bakkers, Erik P. A. M, Kouwenhoven, Leo P, Heedt, Sebastian, Quintero-Pérez, Marina

“…Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for…”
Get full text