Search Results - "Meltser, B.Ya"

InSb/InAs/InGa(Al)As/GaAs(001) metamorphic nanoheterostructures grown by MBE and emitting beyond 3μm by Chernov, M.Yu, Komkov, O.S., Firsov, D.D., Meltser, B.Ya, Semenov, A.N., Terent’ev, Ya.V., Brunkov, P.N., Sitnikova, A.A., Kop’ev, P.S., Ivanov, S.V., Solov’ev, V.A.

“…•InSb/InAs/InGaAs QWs were grown by MBE on GaAs via a metamorphic InAlAs buffer.•Convex-type InxAl1−xAs (x=0.05–0.83) buffer results in the QW defect density…”
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Optimization of the Structural Properties and Surface Morphology of a Convex-Graded [In.sub.x][Al.sub.1 - x]As by Solov'ev, V.A, Chernov, M.Yu, Sitnikova, A.A, Brunkov, P.N, Meltser, B.Ya, Ivanov, S.V

“…The results of optimization of the design and growth conditions of an [In.sub.x][Al.sub.1 - x]As metamorphic buffer layer with a high In content (x =…”
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High magnetic field far-infrared spectroscopy of spatially separated electron–hole layers by Vasilyev, Yu.B., Suchalkin, S.D., Klitzing, K.v., Meltser, B.Ya, Ivanov, S.V., Kop'ev, P.S.

“…Cyclotron resonance (CR) experiments have been performed on InAs/GaSb structures, in which InAs (electron) and GaSb (hole) layers are separated by AlSb…”
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Molecular beam epitaxial growth of [formula omitted] and [formula omitted] heteroepitaxial layers (thermodynamic analysis and characterization) by Ivanov, S.V., Boudza, A.A., Kutt, R.N., Ledentsov, N.N., Meltser, B.Ya, Ruvimov, S.S., Shaposhnikov, S.V., Kop'ev, P.S.

“…In this paper we present the detailed thermodynamic analysis and experimental study on the MBE growth process of heteroepitaxial InSb layers on strongly…”
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Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications by Kunitsyna, E.V., L’vova, T.V., Dunaevskii, M.S., Terent’ev, Ya.V., Semenov, A.N., Solov’ev, V.A., Meltser, B.Ya, Ivanov, S.V., Yakovlev, Yu.P.

“…A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED…”
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Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary by Semenov, A.N., Solov’ev, V.A., Meltser, B.Ya, Terent’ev, Ya.V., Prokopova, L.G., Ivanov, S.V.

“…Al x In 1− x As y Sb 1− y alloys lattice matched to InAs with an Al content up to x = 0.25 have been grown by molecular beam epitaxy on InAs (0 0 1) substrates…”
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Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers by Ivanov, S.V., Semenov, A.N., Solov’ev, V.A., Lyublinskaya, O.G., Terent’ev, Ya.V., Meltser, B.Ya, Prokopova, L.G., Sitnikova, A.A., Usikova, A.A., Toropov, A.A., Kop’ev, P.S.

“…Molecular beam epitaxial growth of InSb sub-monolayer insertions in an InAs matrix, exhibiting intense mid-IR photoluminescence (PL) up to room temperature, is…”
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Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures by Semenov, A. N., Meltser, B. Ya, Solov’ev, V. A., Komissarova, T. A., Sitnikova, A. A., Kirylenko, D. A., Nadtochyi, A. M., Popova, T. V., Kop’ev, P. S., Ivanov, S. V.

“…AlInSb layers are grown on highly lattice-mismatched GaAs (100) substrates by molecular-beam epitaxy (MBE) and studied in situ by reflection high-energy…”
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Room-temperature 3.9-4.3 {mu}m photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix by Solov'ev, V.A., Lyublinskaya, O.G., Semenov, A.N., Meltser, B.Ya, Solnyshkov, D.D., Terent'ev, Ya.V., Prokopova, L.A., Toropov, A.A., Ivanov, S.V., Kop'ev, P.S.

“…We report on molecular beam epitaxial growth of InSb submonolayer insertions in an InAs matrix, exhibiting intense mid-IR photoluminescence (PL) up to room…”
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Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix by Mukhin, M.S., Terent'ev, Ya.V., Golub, L.E., Nestoklon, M.O., Meltser, B.Ya, Semenov, A.N., Solov'ev, V.A., Sitnikova, A.A., Toropov, A.A., Ivanov, S.V.

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Photomagnetic effect in bilayer two-dimensional electron–hole systems by Vasilyev, Yu.B., Stellmach, C., Nachtwei, G., Suris, R.A., Suchalkin, S.D., Meltser, B.Ya, Ivanov, S.V., Kop’ev, P.S.

“…In tilted magnetic fields a bilayer electron–hole system is found to generate a photocurrent under terahertz radiation as the system is tuned to electron…”
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MBE growth, photoluminescence and lasing properties of tensile-strained GaAs/GaSbAs QD nanostructures by Ivanov, S.V., Lyublinskaya, O.G., Toropov, A.A., Solov’ev, V.A., Semenov, A.N., Terent’ev, Ya.V., Meltser, B.Ya, Sitnikova, A.A., Thonke, K., Sauer, R., Kop’ev, P.S.

“…We report on the molecular beam epitaxy (MBE) growth and luminescence properties of tensile-strained type II GaAs/GaSb 1− x As x (0< x<0.05) nanostructures…”
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Novel approach to the calculation of instability regions in GaInAsSb alloys by Sorokin, V.S., Sorokin, S.V., Semenov, A.N., Meltser, B.Ya, Ivanov, S.V.

“…The spinodal and binodal isotherms in GaInAsSb solid alloys were calculated with the regular solution model approximation using standard thermodynamic…”
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Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures by Meltser, B.Ya, Solov’ev, V.A., Lyublinskaya, O.G., Toropov, A.A., Terent’ev, Ya.V., Semenov, A.N., Sitnikova, A.A., Ivanov, S.V.

“…We report on molecular beam epitaxy (MBE) growth and luminescence properties of tensile-strained type-II GaAs/GaSb 1− x As x ( 0 < x < 0.05 ) nanostructures…”
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Cyclotron resonance in InAs quantum wells in tilted magnetic fields by Vasilyev, Yu.B., Ivanov, S.V., Meltser, B.Ya, Suchalkin, S.D., Grambow, P.

“…Cyclotron resonance (CR) experiments have been performed to study the two-dimensional gas in InAs AlSb GaSb structures in tilted magnetic fields. The CR…”
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MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells by Solov’ev, V.A., Terent’ev, Ya.V., Toropov, A.A., Mel’tser, B.Ya, Semenov, A.N., Ivanov, S.V., Kop’ev, P.S., Meyer, J.R.

“…Heterostructures with a compressively strained single InAs 1− x Sb x /AlSb 1− y As y quantum well (QW) have been grown by molecular beam epitaxy on GaSb(0 0 1)…”
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Control by an electric field of electron–hole separation in type-II heterostructures by Vasilyev, Yu.B, Solov'ev, V.A, Mel'tser, B.Ya, Semenov, A.N, Baidakova, M.V, Ivanov, S.V, Kop'ev, P.S, Mendez, E.E, Lin, Y

“…We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is…”
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Novel mid-IR laser based on hybrid AlGaAsSb/InAs/CdMgSe heterostructure by Terent'ev, Ya.V., Kaygorodov, V.A., Solov'ev, V.A., Mel'tser, B.Ya, Semenov, A.N., Lublinskaya, O.G., Sorokin, S.V., Sedova, I.V., Ivanov, S.V., Kop'ev, P.S.

“…We report on the development of a novel design of a mid-IR laser combining III–V and II–VI compounds in a “hybrid” double heterostructure. It possesses large…”
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Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces by Ledentsov, N.N., Maximov, M.V., Kop'ev, P.S., Ustinov, V.M., Belousov, M.V., Meltser, B.Ya, Ivanov, S.V., Shchukin, V.A., Alferov, Zh.I., Grundmann, M., Bimberg, D., Ruvimov, S.S., Richter, W., Werner, P., Gösele, U., Heidenreich, J., Wang, P.D., Sotomayor Torres, C.M.

“…Similar effects are responsible for self-organization of periodically corrugated surface structures and ordered dot arrays on crystal surfaces. Strain…”
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Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy by Tsatsul'nikov, A.F, Ivanov, S.V, Kop'ev, P.S, Krestnikov, I.L, Kryganovskii, A.K, Ledentsov, N.N, Maximov, M.V, Mel'tser, B.Ya, Nekludov, P.V, Suvorova, A.A, Titkov, A.N, Volovik, B.V, Grundmann, M, Bimberg, D, Alferov, Zh.I

“…InSb nanoislands in a GaSb matrix have been fabricated and their structural and luminescence properties have been studied. The deposition of ∼2 monolayers of…”
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