Search Results - "Melito, M."
-
1
Neuroprotective efficacy of aminopropyl carbazoles in a mouse model of Parkinson disease
Published in Proceedings of the National Academy of Sciences - PNAS (16-10-2012)“…We previously reported the discovery of P7C3, an aminopropyl carbazole having proneurogenic and neuroprotective properties in newborn neural precursor cells of…”
Get full text
Journal Article -
2
In Silico Derived Small Molecules Bind the Filovirus VP35 Protein and Inhibit Its Polymerase Cofactor Activity
Published in Journal of molecular biology (15-05-2014)“…The Ebola virus (EBOV) genome only encodes a single viral polypeptide with enzymatic activity, the viral large (L) RNA-dependent RNA polymerase protein…”
Get full text
Journal Article -
3
Electrode positioning to investigate the changes of the thoracic bioimpedance caused by aortic dissection – a simulation study
Published in Journal of electrical bioimpedance (2020)“…Impedance cardiography (ICG) is a non-invasive method to evaluate several cardiodynamic parameters by measuring the cardiac-synchronous changes in the dynamic…”
Get full text
Journal Article -
4
Does the light influence astaxanthin production in Xanthophyllomyces dendrorhous?
Published in Natural product research (01-04-2013)“…Astaxanthin (C 40 H 52 O 4 ) is an important natural pigment that has considerable promising applications in human health. Until now, many efforts were made…”
Get full text
Journal Article -
5
Control of the switching transients of IGBT series strings by high-performance drive units
Published in IEEE transactions on industrial electronics (1982) (01-06-2001)“…In the field of power electronics, the use of series-connected insulated gate devices, such as insulated gate bipolar transistors or power MOSFETs, is…”
Get full text
Journal Article -
6
Switching-behavior improvement of insulated gate-controlled devices
Published in IEEE transactions on power electronics (01-07-1997)“…MOSFETs and insulated gate bipolar transistor (IGBT) devices are increasingly used in electronic circuits due to both their easy driving and ability to handle…”
Get full text
Journal Article -
7
Performance Analysis of Merged p-i-n-Schottky Diodes With Doping Compensation of the Drift Region
Published in IEEE transactions on industry applications (01-05-2007)“…In this paper, standard-cell Schottky rectifiers along with silicon-based merged p-i-n-Schottky (MPS) and p-i-n diodes, which are realized using a super…”
Get full text
Journal Article -
8
Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy
Published in IEEE transactions on power electronics (01-01-2001)“…Insulated gate devices, such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), are increasingly…”
Get full text
Journal Article -
9
A new driving circuit for IGBT devices
Published in IEEE transactions on power electronics (01-05-1995)“…IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. This paper deals with the problems that concern…”
Get full text
Journal Article -
10
Parallel strings of IGBTs in short circuit transients: analysis of the parameter influence and experimental behavior
Published in IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02 (2002)“…In this paper the behavior analysis of parallel connection of IGBTs under short circuit conditions is presented. The issues of hard switching fault (HSF) and…”
Get full text
Conference Proceeding -
11
A novel protection technique devoted to the improvement of the short circuit ruggedness of IGBTs
Published in IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468) (2003)“…This paper deals with a novel short circuit protection technique that is applied during fault under load (FUL) conditions occurring on IGBT devices. An…”
Get full text
Conference Proceeding -
12
Transient behavior of IGBTs submitted to fault under load conditions
Published in Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) (2002)“…The paper deals with the short circuit behavior during fault under load (FUL) conditions occurring on IGBT devices. The experimental switching transients in…”
Get full text
Conference Proceeding -
13
A low-voltage MOSFET with small on-resistance: an extended characterization in high-efficiency power converter applications
Published in Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248) (2001)“…The paper deals with a new concept applied in designing low-voltage power MOSFETs, which are suitable for high-current low-voltage converter applications, The…”
Get full text
Conference Proceeding -
14
Modeling and characterization of a merged PiN-Schottky diode with doping compensation of the drift region
Published in Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting (2004)“…In this paper standard-cell Schottky rectifiers along with silicon-based merged PiN Schottky (MPS) and PiN diodes, which are realized using a super junction…”
Get full text
Conference Proceeding -
15
A new high voltage power MOSFET for power conversion applications
“…The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new…”
Get full text
Conference Proceeding -
16
Active voltage sharing of series connected strings of IGBT devices in bridge applications
Published in Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242) (1998)“…The successful use of series connected strings of MOSFETs or IGBTs, requires equalizing the dynamic and static voltage sharing across the devices. The dynamic…”
Get full text
Conference Proceeding -
17
Snubberless balancement of series connected insulated gate devices by a novel gate control strategy
Published in IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting (1997)“…The series connection of insulated gate devices, such as MOSFETs or IGBTs, is increasingly used in high-voltage power converters where the demand for fast…”
Get full text
Conference Proceeding -
18
Bipolar-MOS monolithic cascode switch in VIPower technology
Published in Proceedings of 1994 IEEE Industry Applications Society Annual Meeting (1994)“…In this paper a bipolar-power MOSFET cascode monolithic device, realized in ST-SGS Thomson VIPower (Vertical Intelligent Power) Technology called M3, is…”
Get full text
Conference Proceeding -
19
Short circuit transient behavior of IGBT devices in series connections
Published in Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on (2002)“…The need of devices for medium-range power converters gives rise to a growing interest for the series connections of IGBTs. In this case the control of the…”
Get full text
Conference Proceeding -
20
Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter
Published in IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics (01-11-2006)“…This paper deals with the use of the last generation of super-junction (SJ) power MOSFET devices together with silicon carbide (SiC) Schottky diodes in an…”
Get full text
Conference Proceeding