Search Results - "Melito, M."

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    Electrode positioning to investigate the changes of the thoracic bioimpedance caused by aortic dissection – a simulation study by Badeli, V., Melito, G. M., Reinbacher-Köstinger, A., Bíró, O., Ellermann, K.

    “…Impedance cardiography (ICG) is a non-invasive method to evaluate several cardiodynamic parameters by measuring the cardiac-synchronous changes in the dynamic…”
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    Journal Article
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    Does the light influence astaxanthin production in Xanthophyllomyces dendrorhous? by Tropea, A., Gervasi, T., Melito, M.R., Curto, A. Lo, Curto, R. Lo

    Published in Natural product research (01-04-2013)
    “…Astaxanthin (C 40 H 52 O 4 ) is an important natural pigment that has considerable promising applications in human health. Until now, many efforts were made…”
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    Journal Article
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    Control of the switching transients of IGBT series strings by high-performance drive units by Raciti, A., Belverde, G., Galluzzo, A., Greco, G., Melito, M., Musumeci, S.

    “…In the field of power electronics, the use of series-connected insulated gate devices, such as insulated gate bipolar transistors or power MOSFETs, is…”
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    Journal Article
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    Switching-behavior improvement of insulated gate-controlled devices by Musumeci, S., Raciti, A., Testa, A., Galluzzo, A., Melito, M.

    Published in IEEE transactions on power electronics (01-07-1997)
    “…MOSFETs and insulated gate bipolar transistor (IGBT) devices are increasingly used in electronic circuits due to both their easy driving and ability to handle…”
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    Journal Article
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    Performance Analysis of Merged p-i-n-Schottky Diodes With Doping Compensation of the Drift Region by Musumeci, S., Raciti, A., Frisina, F., Melito, M., Saggio, M.G.

    Published in IEEE transactions on industry applications (01-05-2007)
    “…In this paper, standard-cell Schottky rectifiers along with silicon-based merged p-i-n-Schottky (MPS) and p-i-n diodes, which are realized using a super…”
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    Journal Article
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    Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy by Belverde, G., Galluzzo, A., Melito, M., Musumeci, S., Raciti, A.

    Published in IEEE transactions on power electronics (01-01-2001)
    “…Insulated gate devices, such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), are increasingly…”
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    Journal Article
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    A new driving circuit for IGBT devices by Licitra, C., Musumeci, S., Raciti, A., Galluzzo, A.U., Letor, R., Melito, M.

    Published in IEEE transactions on power electronics (01-05-1995)
    “…IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. This paper deals with the problems that concern…”
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    Journal Article
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    Parallel strings of IGBTs in short circuit transients: analysis of the parameter influence and experimental behavior by Musumeci, S., Pagano, R., Raciti, A., Frisina, F., Melito, M.

    “…In this paper the behavior analysis of parallel connection of IGBTs under short circuit conditions is presented. The issues of hard switching fault (HSF) and…”
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    Conference Proceeding
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    A novel protection technique devoted to the improvement of the short circuit ruggedness of IGBTs by Musumeci, S., Pagano, R., Raciti, A., Belverde, G., Guastella, C., Melito, M.

    “…This paper deals with a novel short circuit protection technique that is applied during fault under load (FUL) conditions occurring on IGBT devices. An…”
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    Conference Proceeding
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    Transient behavior of IGBTs submitted to fault under load conditions by Musumeci, S., Pagano, R., Raciti, A., Frisina, F., Melito, M.

    “…The paper deals with the short circuit behavior during fault under load (FUL) conditions occurring on IGBT devices. The experimental switching transients in…”
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    Conference Proceeding
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    A low-voltage MOSFET with small on-resistance: an extended characterization in high-efficiency power converter applications by Belverde, G., Guastella, C., Melito, M., Musumeci, S., Raciti, A.

    “…The paper deals with a new concept applied in designing low-voltage power MOSFETs, which are suitable for high-current low-voltage converter applications, The…”
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    Conference Proceeding
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    Modeling and characterization of a merged PiN-Schottky diode with doping compensation of the drift region by Musumeci, S., Pagano, R., Raciti, A., Frisina, F., Melito, M., Saggio, M.

    “…In this paper standard-cell Schottky rectifiers along with silicon-based merged PiN Schottky (MPS) and PiN diodes, which are realized using a super junction…”
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    Conference Proceeding
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    A new high voltage power MOSFET for power conversion applications by Galluzzo, A., Melito, M., Musumeci, S., Saggio, M., Raciti, A.

    “…The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new…”
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    Conference Proceeding
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    Active voltage sharing of series connected strings of IGBT devices in bridge applications by Belverde, G., Galluzzo, A., Melito, M., Musumeci, S., Raciti, A.

    “…The successful use of series connected strings of MOSFETs or IGBTs, requires equalizing the dynamic and static voltage sharing across the devices. The dynamic…”
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    Conference Proceeding
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    Snubberless balancement of series connected insulated gate devices by a novel gate control strategy by Galluzzo, A., Belverde, G., Melito, M., Musumeci, S., Raciti, A.

    “…The series connection of insulated gate devices, such as MOSFETs or IGBTs, is increasingly used in high-voltage power converters where the demand for fast…”
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    Conference Proceeding
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    Bipolar-MOS monolithic cascode switch in VIPower technology by Melito, M., Belverde, G., Galluzzo, A., Palara, S.

    “…In this paper a bipolar-power MOSFET cascode monolithic device, realized in ST-SGS Thomson VIPower (Vertical Intelligent Power) Technology called M3, is…”
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    Conference Proceeding
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    Short circuit transient behavior of IGBT devices in series connections by Frisina, F., Melito, M., Musumeci, S., Pagano, R., Raciti, A.

    “…The need of devices for medium-range power converters gives rise to a growing interest for the series connections of IGBTs. In this case the control of the…”
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    Conference Proceeding
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    Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter by Chimento, F., Musumeci, S., Raciti, A., Melito, M., Sorrentino, G.

    “…This paper deals with the use of the last generation of super-junction (SJ) power MOSFET devices together with silicon carbide (SiC) Schottky diodes in an…”
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    Conference Proceeding