Search Results - "Mehregany, M"

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  1. 1

    Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires by Feng, X. L, Matheny, M. H, Zorman, C. A, Mehregany, M, Roukes, M. L

    Published in Nano letters (11-08-2010)
    “…We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC)…”
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    Journal Article
  2. 2

    Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications by Chien-Hung Wu, Zorman, C.A., Mehregany, M.

    Published in IEEE sensors journal (01-04-2006)
    “…This paper explores the development of high-temperature pressure sensors based on polycrystalline and single-crystalline 3C-SiC piezoresistors and fabricated…”
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    Journal Article
  3. 3

    Silicon carbide MEMS for harsh environments by Mehregany, M., Zorman, C.A., Rajan, N., Chien Hung Wu

    Published in Proceedings of the IEEE (01-08-1998)
    “…Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent…”
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    Journal Article
  4. 4

    Monocrystalline silicon carbide nanoelectromechanical systems by Yang, Y. T., Ekinci, K. L., Huang, X. M. H., Schiavone, L. M., Roukes, M. L., Zorman, C. A., Mehregany, M.

    Published in Applied physics letters (08-01-2001)
    “…SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned…”
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    Journal Article
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  6. 6

    Contact physics of gold microcontacts for MEMS switches by Hyman, D., Mehregany, M.

    “…This work presents a study of gold metallic contacts regarding contact resistance, heat dissipation, and surface damage in the normal-force regime of tens to…”
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    Journal Article
  7. 7

    SiC cantilever resonators with electrothermal actuation by Jiang, Liudi, Cheung, R., Hedley, J., Hassan, M., Harris, A.J., Burdess, J.S., Mehregany, M., Zorman, C.A.

    Published in Sensors and actuators. A. Physical. (19-04-2006)
    “…Cubic SiC cantilever resonators designed for electrothermal actuation are presented. Metal electrodes with both open circuit and short circuit designs have…”
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    Journal Article
  8. 8

    Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate by Gao, J. R., Hajenius, M., Tichelaar, F. D., Klapwijk, T. M., Voronov, B., Grishin, E., Gol’tsman, G., Zorman, C. A., Mehregany, M.

    Published in Applied physics letters (06-08-2007)
    “…The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission…”
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    Journal Article
  9. 9

    6H-SiC JFETs for 450 ^\hbox Differential Sensing Applications by Patil, A.C., Xiao-an Fu, Anupongongarch, C., Mehregany, M., Garverick, S.L.

    Published in Journal of microelectromechanical systems (01-08-2009)
    “…N-channel 6H-SiC depletion-mode junction field-effect transistors (JFETs) have been fabricated, and characterized for use in high-temperature differential…”
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    Journal Article
  10. 10

    Fabrication and characterization of polycrystalline SiC resonators by Roy, S., DeAnna, R.G., Zorman, C.A., Mehregany, M.

    Published in IEEE transactions on electron devices (01-12-2002)
    “…This paper presents the development of polycrystalline 3C silicon carbide (polySiC) lateral resonant devices, which are fabricated by a three-mask surface…”
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    Journal Article
  11. 11

    Fracture toughness of polycrystalline silicon carbide thin films by Bellante, J. J., Kahn, H., Ballarini, R., Zorman, C. A., Mehregany, M., Heuer, A. H.

    Published in Applied physics letters (14-02-2005)
    “…Thin film polycrystalline silicon carbide (poly-SiC) doubly clamped microtensile specimens were fabricated using standard micromachining processes, and…”
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    Journal Article
  12. 12

    Mechanical properties of epitaxial 3C silicon carbide thin films by Jackson, K.M., Dunning, J., Zorman, C.A., Mehregany, M., Sharpe, W.N.

    Published in Journal of microelectromechanical systems (01-08-2005)
    “…Microscale tensile specimens of epitaxial 3C silicon carbide (3C-SiC) thin films were fabricated on Si substrates and tested to provide measurements of…”
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    Journal Article
  13. 13

    High-aspect-ratio photolithography for MEMS applications by Miyajima, H., Mehregany, M.

    Published in Journal of microelectromechanical systems (01-12-1995)
    “…High-aspect-ratio photolithography using a commercially available positive photoresist and a conventional contact mask aligner with standard UV light source is…”
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    Journal Article
  14. 14

    Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines by Rajan, N., Mehregany, M., Zorman, C.A., Stefanescu, S., Kicher, T.P.

    Published in Journal of microelectromechanical systems (01-09-1999)
    “…Bulk micromachining of high-temperature materials is an enabling technology for the application of MEMS devices in high-temperature environments. This paper…”
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    Journal Article
  15. 15

    Fabrication and testing of surface micromachined polycrystalline SiC micromotors by Yasseen, A.A., Chien Hung Wu, Zorman, C.A., Mehregany, M.

    Published in IEEE electron device letters (01-04-2000)
    “…The authors present the fabrication and testing of surface micromachined polycrystalline silicon carbide micromotors. A new multilayer fabrication process…”
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    Journal Article
  16. 16

    Polycrystalline silicon-carbide surface-micromachined vertical resonators-part II: electrical testing and material property extraction by Wiser, R.F., Tabib-Azar, M., Mehregany, M., Zorman, C.A.

    Published in Journal of microelectromechanical systems (01-06-2005)
    “…This manuscript is the second of a two part series describing the fabrication and testing of megahertz frequency, polycrystalline silicon-carbide (poly-SiC)…”
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    Journal Article
  17. 17

    Origin of the split Si–H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation by Sieber, N., Stark, T., Seyller, Th, Ley, L., Zorman, C. A., Mehregany, M.

    Published in Applied physics letters (24-06-2002)
    “…Using Fourier-transform infrared absorption spectroscopy, we have studied the Si–H stretch mode on hydrogenated 6H-SiC(0001) and 3C-SiC(111). On 6H-SiC(0001)…”
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    Journal Article
  18. 18

    Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization by Davis, Robert F., Gehrke, T., Linthicum, K.J., Zheleva, T.S., Preble, E.A., Rajagopal, P., Zorman, C.A., Mehregany, M.

    Published in Journal of crystal growth (01-05-2001)
    “…Monocrystalline GaN and AlxGa1−xN films have been grown via the pendeo-epitaxy (PE)11Trademark of Nitronex Corporation, Raleigh, NC 27606. technique with and…”
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    Journal Article Conference Proceeding
  19. 19

    Polycrystalline silicon-carbide surface-micromachined vertical resonators-part I: growth study and device fabrication by Wiser, R.F., Juyong Chung, Mehregany, M., Zorman, C.A.

    Published in Journal of microelectromechanical systems (01-06-2005)
    “…This manuscript is the first of a two-part series describing the fabrication and testing of MHz frequency, polycrystalline silicon-carbide (poly-SiC)…”
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    Journal Article
  20. 20

    Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films by Mehregany, M., Lijun Tong, Matus, L.G., Larkin, D.J.

    Published in IEEE transactions on electron devices (01-01-1997)
    “…Fabrication of epitaxial 3C-SiC microstructures by bulk micromachining of the underlying silicon substrate was investigated. Initial studies of the mechanical…”
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    Journal Article