Search Results - "Mehandru, R. M."

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors by Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C., Han, J.

“…Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the…”
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The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS by Luo, B, Mehandru, R.M, Kim, Jihyun, Ren, F, Gila, B.P, Onstine, A.H, Abernathy, C.R, Pearton, S.J, Fitch, R.C, Gillespie, J, Dellmer, R, Jenkins, T, Sewell, J, Via, D, Crespo, A

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