Search Results - "McVittie, J. P."

Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3 by JAMESON, John R, NGO, D, BENKO, C, MCVITTIE, J. P, NISHI, Y, YOUNG, B. A

“…An important question in the manufacture of superconducting electronics is how to control the two-level systems found in amorphous insulators. The present…”
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Synchrotron radiation-induced surface-conductivity of SiO2 for modification of plasma charging by Cismaru, C., Shohet, J. L., McVittie, J. P.

“…In this work, we investigate the electrical surface conductivity that is temporarily induced in SiO2 by exposure to monochromatic vacuum-ultraviolet…”
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Electrical properties of heavily doped polycrystalline silicon-germanium films by King, T.-J., McVittie, J.P., Saraswat, K.C., Pfiester, J.R.

“…The electrical properties of polycrystalline silicon-germanium (poly-Si/sub 1/spl minus/x/Ge/sub x/) films with germanium mole fractions up to 0.56 doped by…”
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Air-gap formation during IMD deposition to lower interconnect capacitance by Shieh, B., Saraswat, K.C., McVittie, J.P., List, S., Nag, S., Islamraja, M., Havemann, R.H.

“…The use of air-gaps between interconnect metal lines to reduce interconnect capacitance has been explored. Simulations were performed to determine the…”
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Thin-oxide damage from gate charging during plasma processing by Fang, S., McVittie, J.P.

“…The plasma-induced charge damage to small gate gate MOS capacitors is investigated by using 'antenna' structures. After an O/sub 2/ plasma step the interface…”
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A model and experiments for thin oxide damage from wafer charging in magnetron plasmas by Fang, S., McVittie, J.P.

“…A physically based model that has been developed to explain the role of plasma nonuniformity in charge damage to oxides is presented. For a uniform plasma the…”
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Oxide damage from plasma charging: breakdown mechanism and oxide quality by Sychyi Fang, McVittie, J.P.

“…The plasma-induced charge damage to small gate area MOS capacitors is investigated by using "antenna" structures. Here, we focus on the oxide defect…”
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Backscattered deposition in Ar sputter etch of silicon dioxide by CHANG, C. Y, MCVITTIE, J. P, SARASWAT, K. C, LIN, K. K

“…Detailed mechanisms of sputter etch of silicon dioxide in argon plasma are studied using a novel test structure. We have found that a significant amount of the…”
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Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing by Friedmann, J.B., Shohet, J.L., Mau, R., Hershkowitz, N., Bisgaard, S., Shawming Ma, McVittie, J.P.

“…In this work, the effects of plasma-parameter variations on the charging damage of polysilicon-gate MOS capacitor test structures exposed to O/sub 2/…”
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A study of trenched capacitor structures by Gonzalez, C., McVittie, J.P.

“…Trenched structures have been fabricated using a highly anisotropic low ion energy bombardment etching technique and evaluated using their CV characteristics…”
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Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides by Kao, D.-B., McVittie, J.P., Nix, W.D., Saraswat, K.C.

“…For pt.I see ibid., vol.ED-34, p.1008-17 (May 1987). The authors propose that the stress from two-dimensional oxide deformation affects the kinetic parameter…”
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Hydrogenation by ion implantation for scaled SOI/PMOS transistors by Singh, H.J., Saraswat, K.C., Shott, J.D., McVittie, J.P., Meindl, J.D.

“…Hydrogenation by ion implantation has been investigated as a promising technique for VLSI/SOI and has been correlated with the resultant characteristics of…”
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Electrical endpoint detection of VLSI contact plasma etching by Chang, G., McVittie, J.P., Walker, J.T., Dutton, R.W.

“…A precise, in situ monitor of plasma contact etching is described. This method of electrical endpoint detection provides a dc electrical current which is…”
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A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact by Sturm, J.C., McVittie, J.P., Gibbons, J.F., Pfeiffer, L.

“…A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still…”
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Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density by Kuzum, D., Krishnamohan, T., Pethe, A.J., Okyay, A.K., Oshima, Y., Yun Sun, McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C.

“…Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone oxidation to engineer…”
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Robust, stable, and accurate boundary movement for physical etching and deposition simulation by Ze-Kai Hsiau, Kan, E.C., McVittie, J.P., Dutton, R.W.

“…The increasing complexity of VLSI device interconnect features and fabrication technologies encountered by semiconductor etching and deposition simulation…”
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Modeling of oxide breakdown from gate charging during resist ashing by Fang, S., Murakawa, S., McVittie, J.P.

“…Plasma damage was observed after exposing an antenna capacitor structure to an O/sub 2/ plasma in a single wafer resist asher. The observed early breakdown is…”
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Annealing of oxide fixed charges in scaled polysilicon gate MOS structures by Dah-Bin Kao, Saraswat, K.C., McVittie, J.P.

“…Annealing of oxide fixed charges (Q F ) under polysilicon gate in scaled MOS structures was studied. Our results indicate that, even for a gate width as small…”
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Two precursor model for low‐pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicate by IslamRaja, M. M., Chang, C., McVittie, J. P., Cappelli, M. A., Saraswat, K. C.

“…The low‐pressure deposition of SiO2 from tetraethylorthosilicate (TEOS) is studied. Experiments have been done to get the profile evolution in trenches of…”
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Prediction of plasma charging induced gate oxide damage by plasma charging probe by Shawming Ma, McVittie, J.P., Saraswat, K.C.

“…The plasma processing induced wafer charging damage is predicted by the newly developed SPORT (Stanford Plasma On-wafer Real Time) charging probe. Such a probe…”
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