Search Results - "McLain, Michael"

Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs by McLain, Michael L., Barnaby, Hugh J., Schlenvogt, Garrett

“…The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are…”
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Identification of localized radiation damage in power MOSFETs using EBIC imaging by Ashby, David S., Garland, Diana, Esposito, Madeline G., Vizkelethy, Gyorgy, Marinella, Matthew J., McLain, Michael, Llinás, J. P., Talin, A. Alec

“…The rapidly increasing use of electronics in high-radiation environments and the continued evolution in transistor architectures and materials demand improved…”
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Understanding the Implications of a LINAC's Microstructure on Devices and Photocurrent Models by McLain, Michael L., McDonald, J. Kyle, Hembree, Charles E., Sheridan, Timothy J., Weingartner, Thomas A., Dodd, Paul E., Shaneyfelt, Marty R., Hartman, Fred, Black, Dolores A.

“…The effect of a linear accelerator's (LINAC's) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are…”
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Total-ionizing-dose effects on isolation oxides in modern CMOS technologies by Barnaby, Hugh J., Mclain, Michael, Esqueda, Ivan Sanchez

“…This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments…”
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The susceptibility of TaOx-based memristors to high dose rate ionizing radiation and total ionizing dose by McLain, Michael Lee, Sheridan, Timothy J., Hjalmarson, Harold Paul, Mickel, Patrick R., Hanson, Donald J., McDonald, Joseph K., Hughart, David Russell, Marinella, Matthew J.

“…This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide (TaOx) memristors. Transient data were…”
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Total ionizing dose effects in shallow trench isolation oxides by Faccio, Federico, Barnaby, Hugh J., Chen, Xiao J., Fleetwood, Daniel M., Gonella, Laura, McLain, Michael, Schrimpf, Ronald D.

“…The peaked evolution of leakage current with total ionizing dose observed in transistors in 130 nm generation technologies is studied with field oxide field…”
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Effects of High Dose Rate Ionizing Radiation on Fused Silica and Sapphire Films by McLain, Michael L., Hartman, Fred, Zarick, Tom A., Hjalmarson, Harold P., Gleason, Joseph D., McDonald, Kyle, Sheridan, Tim J.

“…The effects of high dose rate electron beam exposures on the electrical conductivity of fused silica and sapphire films are investigated via modern…”
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The Susceptibility of }-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose by McLain, Michael L., Hjalmarson, Harold P., Sheridan, Tim J., Mickel, Patrick R., Hanson, Don, McDonald, Kyle, Hughart, David R., Marinella, Matthew J.

“…This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide ( TaO x ) memristors. Transient data…”
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Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides by Esqueda, I. S., Barnaby, H. J., Adell, P. C., Rax, B. G., Hjalmarson, H. P., McLain, M. L., Pease, R. L.

“…Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate…”
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Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in Memristors by Hughart, David R., Pacheco, Jose L., Lohn, Andrew J., Mickel, Patrick R., Bielejec, Edward, Vizkelethy, Gyorgy, Doyle, Barney L., Wolfley, Steven L., Dodd, Paul E., Shaneyfelt, Marty R., McLain, Michael L., Marinella, Matthew J.

“…The locations of conductive regions in TaO x memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device…”
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Debris-flow avulsion tendency estimated from boreholes or channel cuts by McLain, Michael C., Santi, Paul M., Pyles, David R.

“…Debris fans are an important landform for human habitation and development in mountainous regions. While much research in debris flow runout has focused on…”
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High fidelity measurement of bioelectrical signals by Mclain, Michael Alan

“…Previous research regarding the acquisition and electrical characterization of bioelectrical signals of both noninvasive “ oriundis in vivo ” , generally…”
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Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs by Mclain, Michael L., Barnaby, Hugh, Schlenvogt, Garrett

“…The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are…”
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Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose by Esposito, Madeline G., Manuel, Jack E., Privat, Aymeric, Xiao, T. Patrick, Garland, Diana, Bielejec, Edward, Vizkelethy, Gyorgy, Dickerson, Jeramy, Brunhaver, John, Talin, A. Alec, Ashby, David, King, Michael P., Barnaby, Hugh, Mclain, Michael, Marinella, Matthew J.

“…Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled…”
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Multiscale System Modeling of Single-Event-Induced Faults in Advanced Node Processors by Cannon, Matthew, Rodrigues, Arun, Black, Dolores, Black, Jeff, Bustamante, Luis, Breeding, Matthew, Feinberg, Ben, Skoufis, Micahel, Quinn, Heather, Clark, Lawrence T., Brunhaver, John, Barnaby, Hugh, McLain, Michael, Agarwal, Sapan, Marinella, Matthew J.

“…Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an…”
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Study protocol for a randomized controlled trial of mindfulness-based relapse prevention for opioid use disorders by Zinzow, Heidi, Shi, Lu, Rennert, Lior, Chen, Liwei, Lopes, Snehal, Zhang, Lingling, Jones, Karyn, Jindal, Meenu, Stam, Claire, Mclain, Michael

“…The opioid misuse epidemic has reached a crisis level in the United States. Though mindfulness-based relapse prevention (MBRP) has been shown as effective in…”
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Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells by McLain, Michael L., McDonald, J. Kyle, Hjalmarson, Harold P., Serrano, Jason D., Cuoco, Roy P., Hanson, Don, Hughart, David R., Marinella, Matthew J., Hartman, E. Fredrick

“…The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaO x ) memristive bit cells are investigated. The TaO x devices were…”
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Perceptions about mindfulness-based interventions among individuals recovering from opioid and alcohol use disorders: Findings from focus groups by Jones, Karyn Ogata, Lopes, Snehal, Chen, Liwei, Zhang, Lingling, Zinzow, Heidi, Jindal, Meenu, Mclain, Michael, Shi, Lu

“…•We sought to identify attitudes, beliefs, behaviors, and experiences regarding mindfulness and standardized mindfulness based interventions (MBIs) among…”
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Overview of the radiation response of anion-based memristive devices by McLain, Michael L., Marinella, Matt J.

“…In this paper, we provide an overview of the current knowledge of radiation effects in anion-based memristive devices. We will specifically look at the impact…”
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Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects by Taggart, J. L., Jacobs-Gedrim, R. B., McLain, M. L., Barnaby, H. J., Bielejec, E. S., Hardy, W., Marinella, M. J., Kozicki, M. N., Holbert, K.

“…With the growing interest to explore Jupiter's moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment…”
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