Search Results - "McKerrow, Andrew"

  • Showing 1 - 19 results of 19
Refine Results
  1. 1

    Constraint Effects on Thin Film Channel Cracking Behavior by Tsui, Ting Y., McKerrow, Andrew J., Vlassak, Joost J.

    Published in Journal of materials research (01-09-2005)
    “…One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in…”
    Get full text
    Journal Article
  2. 2

    The effect of water diffusion on the adhesion of organosilicate glass film stacks by Tsui, Ting Y., McKerrow, Andrew J., Vlassak, Joost J.

    “…Organosilicate glass (OSG) is a material that is used as a dielectric in advanced integrated circuits. It has a network structure similar to that of amorphous…”
    Get full text
    Journal Article
  3. 3

    Fluorescence and Redox Activity of Probes Anchored through an Aminotrithiol to Polycrystalline Gold by Fox, Marye Anne, Whitesell, James K, McKerrow, Andrew J

    Published in Langmuir (17-02-1998)
    “…A self-assembled monolayer of tris[3-(mercaptopropyl)methyl)]-N-(aminoacetyl)amine (1) covalently anchored onto a polycrystalline gold surface acts as an…”
    Get full text
    Journal Article
  4. 4

    The effect of elastic modulus on channel crack propagation in organosilicate glass films by Tsui, Ting Y., Griffin, A.J., Fields, Russell, Jacques, Jeannette M., McKerrow, Andrew J., Vlassak, Joost J.

    Published in Thin solid films (05-12-2006)
    “…The scaling demands of high-performance, silicon-based devices require the integration of low dielectric constant (low-κ) materials for interconnecting…”
    Get full text
    Journal Article
  5. 5

    Review on recent progress in patterning phase change materials by Shen, Meihua, Lill, Thorsten, Altieri, Nick, Hoang, John, Chiou, Steven, Sims, Jim, McKerrow, Andrew, Dylewicz, Rafal, Chen, Ernest, Razavi, Hamid, Chang, Jane P.

    “…This review discusses critical aspects of patterning phase change materials (PCMs), including dry etching, wet clean, and encapsulation, as they dictate the…”
    Get full text
    Book Review Journal Article
  6. 6

    Thin film interaction between low- k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer by Zeng, Yuxiao, Russell, Stephen W., McKerrow, Andrew J., Chen, Peijun, Alford, T.L.

    Published in Thin solid films (01-02-2000)
    “…The interaction between low- k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer has been studied using four-point-probe sheet resistance…”
    Get full text
    Journal Article
  7. 7

    Thermomechanical properties and moisture uptake characteristics of hydrogen silsesquioxane submicron films by Zhao, Jie-Hua, Malik, Irfan, Ryan, Todd, Ogawa, Ennis T., Ho, Paul S., Shih, Wei-Yan, McKerrow, Andrew J., Taylor, Kelly J.

    Published in Applied physics letters (15-02-1999)
    “…This letter describes measurement of the biaxial modulus, coefficient of thermal expansion (CTE), and moisture uptake characteristics of hydrogen…”
    Get full text
    Journal Article
  8. 8

    Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test by Yong Xiang, Tsui, T.Y., Vlassak, J.J., McKerrow, A.J.

    “…The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiN/sub x/)…”
    Get full text
    Conference Proceeding
  9. 9

    Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect by Tsui, T.Y., Matz, P., Willecke, R., Zielinski, E., Tae Kim, Haase, G., McPherson, J., Singh, A., McKerrow, A.J.

    “…Thin films of silicon nitride (SiN) or silicon carbonitride (SiCN) were deposited as liners at metal-1 in a dual level metal Cu/organosilicate glass…”
    Get full text
    Conference Proceeding
  10. 10

    Quantitative investigations of the aggregation behaviour of hydrophobic anilino squaraine dyes through UV/vis spectroscopy and dynamic light scattering by Wojtyk, James, McKerrow, Andrew, Kazmaier, Peter, Buncel, Erwin

    Published in Canadian journal of chemistry (01-06-1999)
    “…In continuing studies of the aggregation behaviour of squaraine dyes in DMSO-water mixtures, we have examined a series of symmetrical anilino-based squaraines…”
    Get full text
    Journal Article
  11. 11
  12. 12

    Fluorescence probes for chemical reactivity at the interface of a self-assembled monolayer by Fox, Marye Anne, Li, Weijin, Wooten, Marilyn, McKerrow, Andrew, Whitesell, James K.

    Published in Thin solid films (31-08-1998)
    “…New methods for reversible photoimaging of spatially defined surfaces represent attractive technological applications of thin organized films. Surface…”
    Get full text
    Journal Article
  13. 13

    The effect of crosslinking on thermal and mechanical properties of perfluorocyclobutane aromatic ether polymers by Liou, Huey-Chiang, Ho, Paul S., McKerrow, Andrew

    “…As the minimum features in semiconductor devices decrease, it is a new trend to incorporate copper and polymers with dielectric constant less than 3.0 to…”
    Get full text
    Journal Article
  14. 14

    Low resistance wiring and 2Xnm void free fill with CVD Ruthenium liner and DirectSeedTM copper by Rullan, Jonathan, Ishizaka, Tadahiro, Cerio, Frank, Mizuno, Shigeru, Mizusawa, Yasushi, Ponnuswamy, Thomas, Reid, Jon, McKerrow, Andrew, Chih-Chao Yang

    “…Chemical vapor deposited (CVD) Ruthenium liners and DirectSeed TM (DS) copper were used with advanced Electrofill processes to provide lower resistance wiring…”
    Get full text
    Conference Proceeding
  15. 15

    Direct seed electroplating of copper on ruthenium liners by Akolkar, R., Indukuri, T., Clarke, J., Ponnuswamy, T., Reid, J., McKerrow, A. J., Varadarajan, S.

    “…The ruthenium (Ru) liner based metallization scheme depends on the ability to electrodeposit Cu onto thin, resistive Ru substrates with substantially high Cu…”
    Get full text
    Conference Proceeding
  16. 16

    Effectiveness of Ti, TiN, Ta, TaN, and W 2 N as barriers for the integration of low-k dielectric hydrogen silsesquioxane by Zeng, Yuxiao, Russell, Stephen W., McKerrow, Andrew J., Chen, Linghui, Alford, T. L.

    “…The interactions between low-k (dielectric constant) material hydrogen silsesquioxane (HSQ) and barrier layers, Ti, Ta, physical-vapor deposited (PVD), and…”
    Get full text
    Journal Article
  17. 17

    Effectiveness of Ti, TiN, Ta, TaN, and W sub(2)N as barriers for the integration of low-k dielectric hydrogen silsesquioxane by Zeng, Yuxiao, Russell, Stephen W, McKerrow, Andrew J, Chen, Linghui, Alford, T L

    “…The application of Ti, Ta, TiN, TaN and W sub(2)N as diffusion barriers in low-k dielectric hydrogen silsesquioxane (HSQ) and tetraethylorthosilicate (TEOS)…”
    Get full text
    Journal Article
  18. 18

    Effects of elastic modulus on the fracture behavior of low-dielectric constant films by Tsui, T.Y., Griffin, A.J., Jacques, J., Fields, R., McKerrow, A.J., Kraft, R.

    “…A model that predicts channel-crack propagation behavior in silica-based low-/spl kappa/ dielectrics (low-/spl kappa/) was developed. A solid-mechanics theory…”
    Get full text
    Conference Proceeding
  19. 19

    Preparation and characterization of polyimide alternating copolymers incorporating N,N′-bis-(4-anilino)-1,2,4,5-benzene bis(dicarboximide) by McKerrow, Andrew J., Fox, Marye Anne, Leu, Jihperng, Ho, Paul S.

    “…N,N′‐Di‐(4‐anilino)‐1,2,4,5‐benzene bis(dicarboximide) was prepared in a three‐step synthesis and purified by heating the resulting solid to 200°C…”
    Get full text
    Journal Article