Search Results - "McKerrow, Andrew"
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Constraint Effects on Thin Film Channel Cracking Behavior
Published in Journal of materials research (01-09-2005)“…One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in…”
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The effect of water diffusion on the adhesion of organosilicate glass film stacks
Published in Journal of the mechanics and physics of solids (01-05-2006)“…Organosilicate glass (OSG) is a material that is used as a dielectric in advanced integrated circuits. It has a network structure similar to that of amorphous…”
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Fluorescence and Redox Activity of Probes Anchored through an Aminotrithiol to Polycrystalline Gold
Published in Langmuir (17-02-1998)“…A self-assembled monolayer of tris[3-(mercaptopropyl)methyl)]-N-(aminoacetyl)amine (1) covalently anchored onto a polycrystalline gold surface acts as an…”
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The effect of elastic modulus on channel crack propagation in organosilicate glass films
Published in Thin solid films (05-12-2006)“…The scaling demands of high-performance, silicon-based devices require the integration of low dielectric constant (low-κ) materials for interconnecting…”
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Review on recent progress in patterning phase change materials
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-12-2020)“…This review discusses critical aspects of patterning phase change materials (PCMs), including dry etching, wet clean, and encapsulation, as they dictate the…”
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Book Review Journal Article -
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Thin film interaction between low- k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer
Published in Thin solid films (01-02-2000)“…The interaction between low- k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer has been studied using four-point-probe sheet resistance…”
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Thermomechanical properties and moisture uptake characteristics of hydrogen silsesquioxane submicron films
Published in Applied physics letters (15-02-1999)“…This letter describes measurement of the biaxial modulus, coefficient of thermal expansion (CTE), and moisture uptake characteristics of hydrogen…”
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Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test
Published in Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) (2004)“…The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiN/sub x/)…”
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Conference Proceeding -
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Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect
Published in Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) (2004)“…Thin films of silicon nitride (SiN) or silicon carbonitride (SiCN) were deposited as liners at metal-1 in a dual level metal Cu/organosilicate glass…”
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Conference Proceeding -
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Quantitative investigations of the aggregation behaviour of hydrophobic anilino squaraine dyes through UV/vis spectroscopy and dynamic light scattering
Published in Canadian journal of chemistry (01-06-1999)“…In continuing studies of the aggregation behaviour of squaraine dyes in DMSO-water mixtures, we have examined a series of symmetrical anilino-based squaraines…”
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Fluorescence probes for chemical reactivity at the interface of a self-assembled monolayer
Published in Thin solid films (31-08-1998)“…New methods for reversible photoimaging of spatially defined surfaces represent attractive technological applications of thin organized films. Surface…”
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Journal Article -
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The effect of crosslinking on thermal and mechanical properties of perfluorocyclobutane aromatic ether polymers
Published in Journal of polymer science. Part B, Polymer physics (01-06-1998)“…As the minimum features in semiconductor devices decrease, it is a new trend to incorporate copper and polymers with dielectric constant less than 3.0 to…”
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14
Low resistance wiring and 2Xnm void free fill with CVD Ruthenium liner and DirectSeedTM copper
Published in 2010 IEEE International Interconnect Technology Conference (01-06-2010)“…Chemical vapor deposited (CVD) Ruthenium liners and DirectSeed TM (DS) copper were used with advanced Electrofill processes to provide lower resistance wiring…”
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Conference Proceeding -
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Direct seed electroplating of copper on ruthenium liners
Published in 2011 IEEE International Interconnect Technology Conference (01-05-2011)“…The ruthenium (Ru) liner based metallization scheme depends on the ability to electrodeposit Cu onto thin, resistive Ru substrates with substantially high Cu…”
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Conference Proceeding -
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Effectiveness of Ti, TiN, Ta, TaN, and W 2 N as barriers for the integration of low-k dielectric hydrogen silsesquioxane
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-01-2000)“…The interactions between low-k (dielectric constant) material hydrogen silsesquioxane (HSQ) and barrier layers, Ti, Ta, physical-vapor deposited (PVD), and…”
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Journal Article -
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Effectiveness of Ti, TiN, Ta, TaN, and W sub(2)N as barriers for the integration of low-k dielectric hydrogen silsesquioxane
Published in Journal of vacuum science & technology. B, Microelectronics processing and phenomena (01-01-2000)“…The application of Ti, Ta, TiN, TaN and W sub(2)N as diffusion barriers in low-k dielectric hydrogen silsesquioxane (HSQ) and tetraethylorthosilicate (TEOS)…”
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Effects of elastic modulus on the fracture behavior of low-dielectric constant films
Published in Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005 (2005)“…A model that predicts channel-crack propagation behavior in silica-based low-/spl kappa/ dielectrics (low-/spl kappa/) was developed. A solid-mechanics theory…”
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Conference Proceeding -
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Preparation and characterization of polyimide alternating copolymers incorporating N,N′-bis-(4-anilino)-1,2,4,5-benzene bis(dicarboximide)
Published in Journal of polymer science. Part A, Polymer chemistry (30-01-1997)“…N,N′‐Di‐(4‐anilino)‐1,2,4,5‐benzene bis(dicarboximide) was prepared in a three‐step synthesis and purified by heating the resulting solid to 200°C…”
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