Search Results - "McIntosh, R. C."

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  1. 1

    Maps of precipitating electron spectra characterized by Maxwellian and kappa distributions by McIntosh, R. C., Anderson, P. C.

    “…Maps of characterized auroral electron spectra, developed using 8 years of particle spectrometer data from the Defense Meteorological Satellite Program (DMSP)…”
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    Journal Article
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    I know why the caged bird sings: Distress tolerant individuals show greater resting state connectivity between ventromedial prefrontal cortex and right amygdala as a function of higher vagal tone by McIntosh, R C, Hoshi, R A, Nomi, J, Goodman, Z, Kornfeld, S, Vidot, D C

    Published in International journal of psychophysiology (01-02-2024)
    “…Intolerance to psychological distress is associated with various forms of psychopathology, ranging from addiction to mood disturbance. The capacity to…”
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    Journal Article
  3. 3

    Take my breath away: Neural activation at breath-hold differentiates individuals with panic disorder from healthy controls by McIntosh, R.C., Hoshi, R.A., Timpano, K.R.

    Published in Respiratory physiology & neurobiology (01-06-2020)
    “…•Brain activation at peak of an 18-s breath hold was compared as a function of PD.•Breath-holding elicits greater stimuli of fear and self-referential…”
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    Journal Article
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    Paying for harbor maintenance in the US: Options for moving past the Harbor Maintenance Tax by McIntosh, C.R., Wilmot, N.A., Skalberg, R.K.

    “…•US Harbor Maintenance Tax (HMT) is a flawed cost recovery mechanism.•Statistical analysis reveals user fees are unlikely to be an effective…”
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    Journal Article
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    Partial-SOI isolation structure for reduced bipolar transistor parasitics by Burghartz, J.N., Cressler, J.D., Warnock, J., McIntosh, R.C., Jenkins, K.A., Sun, J.Y.-C., Comfort, J.H., Stork, J.M.C., Stanis, C.L., Lee, W., Danner, D.D.

    Published in IEEE electron device letters (01-08-1992)
    “…A bipolar isolation structure with the capability of significantly reducing collector-base capacitance and base resistance is presented. Partial SOI, with SOI…”
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    A low-capacitance bipolar/BiCMOS isolation technology. I. Concept, fabrication process, and characterization by Burghartz, J.N., McIntosh, R.C., Stanis, C.L.

    Published in IEEE transactions on electron devices (01-08-1994)
    “…A device isolation structure for low-parasitic bipolar transistor integration is presented. The concept involves two selective epitaxial growth steps (SEG) and…”
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    Journal Article
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    SPIRIT - A Bipolar/BiCMOS Isolation Technology For High-Performance VLSI by Burghartz, Cifuentes, Warnock, McIntosh, Stanis, Cressler, Sun, Comfort, Jenskins

    Published in Symposium 1993 on VLSI Technology (1993)
    “…The reduction of the bipolar device parasitic capacitances and resistances is becoming increasingly important with the dramatic improvements of the intrinsic…”
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    Conference Proceeding
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    SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process by Harame, D.L., Stork, J.M.C., Meyerson, B.S., Crabbe, E.F., Patton, G.L., Scilla, G.J., de Fresart, E., Bright, A.A., Stanis, C., Megdanis, A.C., Manny, M.P., Petrillo, E.J., Dimeo, M., McIntosh, R.C., Chan, K.K.

    “…Experimental results are presented on the use of N-type ultrahigh-vacuum/chemical vapor deposition (UHV/CVD) low-temperature epitaxy (LTE) to deposit thin (45…”
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    Conference Proceeding
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    Ion-implanted base SiGe PNP self-aligned SEEW transistors by Nguyen-Ngoc, D., Harame, D.L., Burghartz, J.N., McIntosh, R.C., Crabbe, E.F., Warnock, J.D., Stanis, C.L., Meyerson, B.S., Cotte, J.M., Comfort, J.H.

    “…The feasibility of ion-implanting an intrinsic base into an undoped strained SiGe-layer has been demonstrated by fabricating self-aligned selective epitaxy…”
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    Conference Proceeding