Search Results - "McIntosh, R. C."
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Maps of precipitating electron spectra characterized by Maxwellian and kappa distributions
Published in Journal of geophysical research. Space physics (01-12-2014)“…Maps of characterized auroral electron spectra, developed using 8 years of particle spectrometer data from the Defense Meteorological Satellite Program (DMSP)…”
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I know why the caged bird sings: Distress tolerant individuals show greater resting state connectivity between ventromedial prefrontal cortex and right amygdala as a function of higher vagal tone
Published in International journal of psychophysiology (01-02-2024)“…Intolerance to psychological distress is associated with various forms of psychopathology, ranging from addiction to mood disturbance. The capacity to…”
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Take my breath away: Neural activation at breath-hold differentiates individuals with panic disorder from healthy controls
Published in Respiratory physiology & neurobiology (01-06-2020)“…•Brain activation at peak of an 18-s breath hold was compared as a function of PD.•Breath-holding elicits greater stimuli of fear and self-referential…”
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Paying for harbor maintenance in the US: Options for moving past the Harbor Maintenance Tax
Published in Transportation research. Part A, Policy and practice (01-04-2015)“…•US Harbor Maintenance Tax (HMT) is a flawed cost recovery mechanism.•Statistical analysis reveals user fees are unlikely to be an effective…”
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Partial-SOI isolation structure for reduced bipolar transistor parasitics
Published in IEEE electron device letters (01-08-1992)“…A bipolar isolation structure with the capability of significantly reducing collector-base capacitance and base resistance is presented. Partial SOI, with SOI…”
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Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization Technique
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)“…A novel bipolar isolation structure with capability of significantly reducing collector-base capacitance and base resistance is presented. A…”
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Conference Proceeding -
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A low-capacitance bipolar/BiCMOS isolation technology. I. Concept, fabrication process, and characterization
Published in IEEE transactions on electron devices (01-08-1994)“…A device isolation structure for low-parasitic bipolar transistor integration is presented. The concept involves two selective epitaxial growth steps (SEG) and…”
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The Swamping Catalyst Effect VII. Synthesis of 1,6-Diacetonaphthalene
Published in Journal of chemical and engineering data (01-04-1964)Get full text
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Assessment of Dietary Intake of Children With Autism Spectrum Disorders (ASD) Enrolled in a Summer Camp
Published in Journal of nutrition education and behavior (01-07-2016)Get full text
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READING "DRED SCOTT, PLESSY AND BROWN": TOWARD A CONSTITUTIONAL HERMENEUTICS
Published in Howard law journal (01-10-1994)Get full text
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WEST INDIAN CONSTITUTIONAL THEORY: AN ESSAY
Published in Howard law journal (01-01-1989)Get full text
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CONTINUITY AND DISCONTINUITY OF LAW: A REPLY TO JOHN FINNIS
Published in Connecticut law review (01-10-1988)Get full text
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SPIRIT - A Bipolar/BiCMOS Isolation Technology For High-Performance VLSI
Published in Symposium 1993 on VLSI Technology (1993)“…The reduction of the bipolar device parasitic capacitances and resistances is becoming increasingly important with the dramatic improvements of the intrinsic…”
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Conference Proceeding -
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A POETIC FOR LAW: CONSTITUTIONAL THEORY AS METAPHOR
Published in Howard law journal (01-01-1987)Get full text
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ON READING THE NINTH AMENDMENT: A REPLY TO RAOUL BERGER
Published in Howard law journal (01-01-1985)Get full text
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SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process
Published in Digest of Technical Papers.1990 Symposium on VLSI Technology (1990)“…Experimental results are presented on the use of N-type ultrahigh-vacuum/chemical vapor deposition (UHV/CVD) low-temperature epitaxy (LTE) to deposit thin (45…”
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Conference Proceeding -
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Ion-implanted base SiGe PNP self-aligned SEEW transistors
Published in Proceedings of the 1991 Bipolar Circuits and Technology Meeting (1991)“…The feasibility of ion-implanting an intrinsic base into an undoped strained SiGe-layer has been demonstrated by fabricating self-aligned selective epitaxy…”
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Conference Proceeding