Search Results - "McHugo, S. A."
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1
Gettering of metallic impurities in photovoltaic silicon
Published in Applied physics. A, Materials science & processing (29-01-1997)Get full text
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2
Iron solubility in highly boron-doped silicon
Published in Applied physics letters (07-09-1998)“…We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were…”
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3
Diffusion, solubility and gettering of copper in silicon
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-03-2000)“…The feasibility of quantitative predictive modeling of gettering of Cu in silicon, which requires quantitative understanding of its diffusivity and…”
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Journal Article Conference Proceeding -
4
Gettering of iron by oxygen precipitates
Published in Applied physics letters (23-03-1998)“…In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing…”
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5
Synchrotron-based impurity mapping
Published in Journal of crystal growth (01-03-2000)“…Studies were performed on metal impurity precipitates in silicon using synchrotron-based X-rays. The elemental distribution and chemical state of metal…”
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Journal Article Conference Proceeding -
6
Experiments and computer simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level
Published in Physica. B, Condensed matter (01-12-1999)“…The position of the iron donor trap level in the silicon band gap at processing temperatures determines numerous important properties of iron such as its…”
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7
Impurity decoration of defects in float zone and polycrystalline silicon via chemomechanical polishing
Published in Applied physics letters (17-05-1993)“…The behavior of impurities introduced in single and polycrystalline silicon via chemomechanical polishing was studied extensively. Using the electron beam…”
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8
Imaging spectroscopic analysis at the advanced light source
Published in Synchrotron radiation news (01-07-1998)Get full text
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9
Out-diffusion and precipitation of copper in silicon: An electrostatic model
Published in Physical review letters (04-12-2000)“…Concentrations of mobile interstitial copper and precipitated copper in silicon were studied after a high temperature intentional contamination and quench to…”
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10
Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon
Published in Applied physics letters (29-06-1998)“…Impurity and minority carrier lifetime distributions were studied in as-grown multicrystalline silicon used for terrestrial-based solar cells…”
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11
Release of metal impurities from structural defects in polycrystalline silicon
Published in Applied physics letters (06-10-1997)“…Metal impurity release from structural defects in polycrystalline silicon was studied following thermal treatments, and, in addition, a correlation between…”
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12
Thermal stability of copper precipitates in silicon
Published in Applied physics letters (27-11-2000)“…The dissolution of copper precipitates in Czochralski silicon has been studied with synchrotron-based x-ray fluorescence. Copper has been introduced and…”
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13
A study of gettering efficiency and stability in Czochralski silicon
Published in Applied physics letters (22-05-1995)“…Internal gettering efficiencies and stabilities of high and low carbon doped silicon have been compared with standard and ramped annealing conditions. The…”
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14
Competitive gettering of copper in Czochralski silicon by implantation-induced cavities and internal gettering sites
Published in Applied physics letters (11-11-1996)“…The effectiveness of copper gettering by implantation-induced cavities in competition with internal gettering sites in silicon was demonstrated. The cavities…”
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15
Metal impurity precipitates in silicon: chemical state and stability
Published in Physica. B, Condensed matter (01-12-1999)“…The chemical state and the stability of metal precipitates in silicon have been studied using synchrotron-based X-ray fluorescence and absorption…”
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16
Formation of copper precipitates in silicon
Published in Physica. B, Condensed matter (01-12-1999)“…The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and…”
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17
Efficiency-limiting defects in silicon solar cell material
Published in Journal of electronic materials (01-09-1996)“…The precipitation rate of intentionally introduced iron during low-temperature heating is studied among a variety of single-crystal and polycrystalline silicon…”
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18
Efficiency-limiting defects in polycrystalline silicon
Published in Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) (1994)“…Efficiency-limiting defects in polycrystalline silicon were studied using intentional metal contamination and various thermal and gettering treatments…”
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Conference Proceeding