Search Results - "McHugo, S. A."

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    Iron solubility in highly boron-doped silicon by McHugo, S. A., McDonald, R. J., Smith, A. R., Hurley, D. L., Weber, E. R.

    Published in Applied physics letters (07-09-1998)
    “…We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were…”
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    Journal Article
  3. 3

    Diffusion, solubility and gettering of copper in silicon by Istratov, A.A, Flink, C, Hieslmair, H, McHugo, S.A, Weber, E.R

    “…The feasibility of quantitative predictive modeling of gettering of Cu in silicon, which requires quantitative understanding of its diffusivity and…”
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    Journal Article Conference Proceeding
  4. 4

    Gettering of iron by oxygen precipitates by Hieslmair, H., Istratov, A. A., McHugo, S. A., Flink, C., Heiser, T., Weber, E. R.

    Published in Applied physics letters (23-03-1998)
    “…In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing…”
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    Journal Article
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    Synchrotron-based impurity mapping by McHugo, S.A, Thompson, A.C, Flink, C, Weber, E.R, Lamble, G, Gunion, B, MacDowell, A, Celestre, R, Padmore, H.A, Hussain, Z

    Published in Journal of crystal growth (01-03-2000)
    “…Studies were performed on metal impurity precipitates in silicon using synchrotron-based X-rays. The elemental distribution and chemical state of metal…”
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    Journal Article Conference Proceeding
  6. 6

    Experiments and computer simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level by Hieslmair, H., Istratov, A.A., Flink, C., McHugo, S.A., Weber, E.R.

    Published in Physica. B, Condensed matter (01-12-1999)
    “…The position of the iron donor trap level in the silicon band gap at processing temperatures determines numerous important properties of iron such as its…”
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    Journal Article
  7. 7

    Impurity decoration of defects in float zone and polycrystalline silicon via chemomechanical polishing by MCHUGO, S. A, SAWYER, W. D

    Published in Applied physics letters (17-05-1993)
    “…The behavior of impurities introduced in single and polycrystalline silicon via chemomechanical polishing was studied extensively. Using the electron beam…”
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    Journal Article
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    Out-diffusion and precipitation of copper in silicon: An electrostatic model by Flink, C, Feick, H, McHugo, SA, Seifert, W, Hieslmair, H, Heiser, T, Istratov, AA, Weber, ER

    Published in Physical review letters (04-12-2000)
    “…Concentrations of mobile interstitial copper and precipitated copper in silicon were studied after a high temperature intentional contamination and quench to…”
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    Journal Article
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    Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon by McHugo, Scott A., Thompson, A. C., Périchaud, I., Martinuzzi, S.

    Published in Applied physics letters (29-06-1998)
    “…Impurity and minority carrier lifetime distributions were studied in as-grown multicrystalline silicon used for terrestrial-based solar cells…”
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    Journal Article
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    Release of metal impurities from structural defects in polycrystalline silicon by McHugo, Scott A.

    Published in Applied physics letters (06-10-1997)
    “…Metal impurity release from structural defects in polycrystalline silicon was studied following thermal treatments, and, in addition, a correlation between…”
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    Journal Article
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    Thermal stability of copper precipitates in silicon by McHugo, Scott A., Flink, C.

    Published in Applied physics letters (27-11-2000)
    “…The dissolution of copper precipitates in Czochralski silicon has been studied with synchrotron-based x-ray fluorescence. Copper has been introduced and…”
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    Journal Article
  13. 13

    A study of gettering efficiency and stability in Czochralski silicon by McHugo, Scott A., Weber, E. R., Mizuno, M., Kirscht, F. G.

    Published in Applied physics letters (22-05-1995)
    “…Internal gettering efficiencies and stabilities of high and low carbon doped silicon have been compared with standard and ramped annealing conditions. The…”
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    Journal Article
  14. 14

    Competitive gettering of copper in Czochralski silicon by implantation-induced cavities and internal gettering sites by McHugo, Scott A., Weber, E. R., Myers, S. M., Petersen, G. A.

    Published in Applied physics letters (11-11-1996)
    “…The effectiveness of copper gettering by implantation-induced cavities in competition with internal gettering sites in silicon was demonstrated. The cavities…”
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    Journal Article
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    Metal impurity precipitates in silicon: chemical state and stability by McHugo, Scott A, Thompson, A.C, Lamble, G, Flink, C, Weber, E.R

    Published in Physica. B, Condensed matter (01-12-1999)
    “…The chemical state and the stability of metal precipitates in silicon have been studied using synchrotron-based X-ray fluorescence and absorption…”
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    Journal Article
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    Formation of copper precipitates in silicon by Flink, Christoph, Feick, Henning, McHugo, Scott A, Mohammed, Amna, Seifert, Winfried, Hieslmair, Henry, Heiser, Thomas, Istratov, Andrei A, Weber, Eicke R

    Published in Physica. B, Condensed matter (01-12-1999)
    “…The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and…”
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    Journal Article
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    Efficiency-limiting defects in silicon solar cell material by BAILEY, J, MC HUGO, S. A, HIESLMAIR, H, WEBER, E. R

    Published in Journal of electronic materials (01-09-1996)
    “…The precipitation rate of intentionally introduced iron during low-temperature heating is studied among a variety of single-crystal and polycrystalline silicon…”
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    Journal Article
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    Efficiency-limiting defects in polycrystalline silicon by McHugo, S.A., Bailey, J., Hieslmair, H., Weber, E.R.

    “…Efficiency-limiting defects in polycrystalline silicon were studied using intentional metal contamination and various thermal and gettering treatments…”
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    Conference Proceeding