Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology

This paper addresses novel approaches at material and integration fronts for gate applications. Material wise, new n work function metal (WFM) material is explored to address the need for reducing gate resistance and maintaining proper Vt at 20A or less WFM thickness. Integration wise, next generati...

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Bibliographic Details
Published in:	2018 IEEE International Electron Devices Meeting (IEDM) pp. 11.4.1 - 11.4.4
Main Authors:	Bao, Ruqiang, Hung, Steven, Wang, Miaomiao, Chung, Kisup, Barman, Soumendra, Krishnan, Siddarth A, Yang, Yixiong, Tang, Wei, Li, Luping, Lin, Yongjing, Chan, Michael S, Chen, Zhebo, Miao, Xin, Hopstaken, Marinus, Conti, Richard A, Jagannathan, Hemanth, Chudzik, Michael P, McHerron, Dalea, Haran, Bala S, Natarajan, Sanjay
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-12-2018
Subjects:	Annealing Conductivity Encapsulation Logic gates Metals Reliability Silicon
Online Access:	Get full text
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Summary:	This paper addresses novel approaches at material and integration fronts for gate applications. Material wise, new n work function metal (WFM) material is explored to address the need for reducing gate resistance and maintaining proper Vt at 20A or less WFM thickness. Integration wise, next generation dipole is tested with various process sequences to address the need in lowering overall thermal budget at the gate level for advanced architectures, such as scaled FinFET and Nanosheets.
ISSN:	2156-017X
DOI:	10.1109/IEDM.2018.8614524