Search Results - "McGuire, G. E."

High-Power GaN Electronic Devices by Zhang, A.P., Ren, F., Anderson, T.J., Abernathy, C.R., Singh, R.K., Holloway, P.H., Pearton, S.J., Palmer, D., McGuire, G.E.

“…Gallium Nitride (GaN) and related materials (especially AlGaN) recently have attracted a lot of interest for applications in high-power electronics capable of…”
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Surface Characterization by McGuire, G. E, Fuchs, J, Han, P, Kushmerick, J. G, Weiss, P. S, Simko, S. J, Nemanich, R. J, Chopra, D. R

“…McGuire et al discuss the literature from Jan 1997 through Oct 1998 covering surface characterization…”
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Silicon field emitter cathodes: Fabrication, performance, and applications by Temple, D., Palmer, W. D., Yadon, L. N., Mancusi, J. E., Vellenga, D., McGuire, G. E.

“…This article gives an overview of fabrication and performance of a class of vacuum microelectronic devices, namely, silicon tip-on-post field emitter arrays…”
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Surface Characterization by McGuire, G. E, Weiss, P. S, Kushmerick, J. G, Johnson, J. A, Simko, Steve J, Nemanich, R. J, Parikh, Nalin R, Chopra, D. R

“…Literature on surface characterization from Jan 1995 to Oct 1996 is presented…”
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Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in   situ , real-time ion-beam analysis by Auciello, O., Krauss, A. R., Im, J., Gruen, D. M., Irene, E. A., Chang, R. P. H., McGuire, G. E.

“…In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil…”
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Surface Characterization by McGuire, G. E, Swanson, Max L, Parikh, Nalin R, Simko, Steve, Weiss, P. S, Ferris, J. H, Nemanich, R. J, Chopra, D. R, Chourasia, A. R

“…A review of literature on surface characterization published from Jan 1993 through Oct 1994 is presented…”
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Improved stability of thin cobalt disilicide films using BF2 implantation by WANG, Q. F, TSAI, J. Y, OSBURN, C. M, CHAPMAN, R, MCGUIRE, G. E

“…The thermal stability of ∼50 nm CoSi2 and TiSi2 thin films after BF2+ implantation was investigated. The electrical characteristics of silicide films were…”
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Surface characterization by McGuire, G. E, Ray, M. A, Simko, Steven J, Perkins, F. Keith, Brandow, Susan L, Dobisz, Elizabeth A, Nemanich, R. J, Chourasia, A. R, Chopra, D. R

“…A review of the literature on surface characterization is presented. The review includes sections on ion spectrometry, electron spectroscopy, proximal probes,…”
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Surface characterization by Fulghum, J. E, McGuire, G. E, Musselman, I. H, Nemanich, R. J, White, J. M, Chopra, D. R, Chourasia, A. R

“…This review is divided into the following analytical methods: ion spectroscopy, electron spectroscopy, scanning tunneling microscopy, atomic force microscopy,…”
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Low voltage electron emission from Pb(Zr x Ti1− x )O3-based thin film cathodes by Auciello, O., Ray, M. A., Palmer, D., Duarte, J., McGuire, G. E., Temple, D.

“…Electron emission from ferroelectric thin films (≤1 μm thick) is demonstrated. In addition, electron energy distributions have been measured using an Auger…”
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Surface characterization by Ray, M. A, McGuire, G. E, Musselman, I. H, Nemanich, R. J, Chopra, D. R

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Field emission device with back gated structure by Mammana, V. P., Jaeger, D., Shenderova, O., McGuire, G. E.

“…Analysis and performance optimization of a back-gated field emission device is provided. The device consists of an anode, electron emitting cathodes and gate…”
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Auger electron spectra intensity variation with potential-modulation differentiation by McGuire, G. E, Martin, B. R

“…Auger electron spectra are normally taken as dN(E)/dE vs. E with a potential-modulation differentiation scheme used to suppress high background caused by…”
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Factors affecting the quality of software project management: an empirical study based on the Capability Maturity Model by Mcguire, E. G.

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Fabrication of column‐based silicon field emitter arrays for enhanced performance and yield by Temple, D., Ball, C. A., Palmer, W. D., Yadon, L. N., Vellenga, D., Mancusi, J., McGuire, G. E., Gray, H. F.

“…In this article, simulation, fabrication, and direct current (dc) characterization data are presented for column‐based silicon field emitter array (FEA)…”
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Characterization of VLSI materials by McGuire, G. E., Church, L. B., Jones, D. L., Smith, K. K., Tuenge, D. T.

“…The interest in very large scale integrated circuits and very high speed integrated circuits has placed increasing demands on the quality of the available…”
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Why does somatostatin cause gallstones? by Ahrendt, S A, McGuire, G E, Pitt, H A, Lillemoe, K D

“…Long-term administration of the somatostatin analogue, octreotide, is complicated by gallstone formation. Somatostatin is known to inhibit hepatic bile…”
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Spectroscopic differential reflectance as an analytical probe for microelectronic processing by Burns, T. M., Irene, E. A., Chevacharoenkul, S., McGuire, G. E.

“…It is important in microelectronics to be able to measure damage and monitor processing during or following the many different processes. To this end, a simple…”
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Use of scanning tunneling microscopy and transmission electron microscopy to quantify and characterize CoSi2 roughness by Chapman, R. C., Smith, P., Adu, R. P., McGuire, G. E., Canovai, C., Osburn, C.

“…Scanning tunneling microscopy (STM) and transmission electron microscopy (TEM) were used to quantify and characterize CoSi2 surface roughness and CoSi2/Si…”
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Optimization of primary beam conditions for secondary ion mass spectrometry depth profiling of shallow junctions in silicon using the Perkin–Elmer 6300 by Lee, J. J., Fulghum, J. E., McGuire, G. E., Ray, M. A., Osburn, C. M., Linton, R. W.

“…Submicron ULSI designs require the measurement of ultra‐shallow junction implants with peak concentrations within 10 nm below the surface of a wafer. Secondary…”
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