Search Results - "McGruer, N.E."

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  1. 1

    A dynamic model, including contact bounce, of an electrostatically actuated microswitch by McCarthy, B., Adams, G.G., McGruer, N.E., Potter, D.

    Published in Journal of microelectromechanical systems (01-06-2002)
    “…Microelectromechanical devices are increasingly being integrated into electronic circuitry. One of these types of devices is the microswitch, which acts much…”
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    Journal Article
  2. 2

    Study of contacts in an electrostatically actuated microswitch by Majumder, Sumit, McGruer, N.E., Adams, George G., Zavracky, P.M., Morrison, Richard H., Krim, Jacqueline

    Published in Sensors and actuators. A. Physical. (25-08-2001)
    “…Surface micromachined, electrostatically actuated microswitches have been developed at Northeastern University. Microswitches with gold contacts typically have…”
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    Journal Article
  3. 3

    Micromechanical switches fabricated using nickel surface micromachining by Zavracky, P.M., Majumder, S., McGruer, N.E.

    Published in Journal of microelectromechanical systems (01-03-1997)
    “…Micromechanical switches have been fabricated in electroplated nickel using a four-level surface micromachining process. The simplest devices are configured…”
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    Journal Article
  4. 4

    Integrated self-biased hexaferrite microstrip circulators for millimeter-wavelength applications by Oliver, S.A., Shi, P., McGruer, N.E., Vittoria, C., Hu, W., How, H., McKnight, S.W., Zavracky, P.M.

    “…Planar microstrip Y-junction circulators have been fabricated from metallized 130-/spl mu/m-thick self-biased strontium hexaferrite ceramic die, and then…”
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    Journal Article
  5. 5

    Determination of intermodulation distortion in a contact-type MEMS microswitch by Johnson, J., Adams, G.G., McGruer, N.E.

    “…Finite-element simulations have been used to predict intermodulation distortion in a gold-on-gold contact-type microelectromechanical systems microswitch. The…”
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    Journal Article
  6. 6

    Theory and experiment of thin-film junction circulator by How, H., Oliver, S.A., McKnight, S.W., Zavracky, P.M., McGruer, N.E., Vittoria, C., Schmidt, R.

    “…We have calculated the S-parameters and losses in ferrite-film-junction circulators using a new effective-field theory assuming TEM-like propagation…”
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    Journal Article
  7. 7

    Application of single-crystal scandium substituted barium hexaferrite for monolithic millimeter-wavelength circulators by Shi, P., How, H., Zuo, X., Oliver, S.A., McGruer, N.E., Vittoria, C.

    Published in IEEE transactions on magnetics (01-11-2001)
    “…Single-crystal scandium-substituted barium hexaferrite crystals have been characterized and used in the fabrication of miniature monolithic circulators on…”
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    Journal Article
  8. 8

    Mechanical, Thermal, and Material Influences on Ohmic-Contact-Type MEMS Switch Operation by McGruer, N.E., Adams, G.G., Chen, L., Guo, Z.J., Du, Y.

    “…Microswitch performance and reliability are affected by the coupled influences of actuator properties, material and process properties, and device thermal…”
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    Conference Proceeding
  9. 9

    Emission characteristics of gated silicon wedges by Barry, J.D., McGruer, N.E., Warner, K., Bintz, W.J., Nagras, A.

    Published in IEEE electron device letters (01-02-1993)
    “…Gated field emission wedges of varying lengths have been fabricated and tested. These wedges emit at 180-200 V from multiple emission sites that are…”
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    Journal Article
  10. 10

    Determination of intermodulation distortion in a MEMS microswitch by Johnson, J., Adams, G.G., McGruer, N.E.

    “…This paper presents a method for predicting the size of intermodulation products due to contact heating in a contact type MEMS microswitch. The primary origin…”
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    Conference Proceeding
  11. 11

    Influence of nonuniform magnetic field on a ferrite junction circulator by How, H., Oliver, S.A., McKnight, S.W., Zavracky, P.M., McGruer, N.E., Vittoria, C., Schmidt, R.

    “…We have analytically formulated the problem that a ferrite circulator junction is biased by a nonuniform magnetic field. Interport impedances of the junction…”
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    Journal Article
  12. 12

    Plasma immersion ion implantation doping using a microwave multipolar bucket plasma by Qin, S., McGruer, N.E., Chan, C., Warner, K.

    Published in IEEE transactions on electron devices (01-10-1992)
    “…Using plasma immersion ion implantation, silicon has been doped with boron in a high-voltage pulsed microwave multipolar bucket plasma system. Diborane gas…”
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    Journal Article
  13. 13

    Oxidation-sharpened gated field emitter array process by McGruer, N.E., Warner, K., Singhal, P., Gu, J.J., Chan, C.

    Published in IEEE transactions on electron devices (01-10-1991)
    “…Structural and electrical characteristics of silicon field emitter arrays are reported. The authors present a process using anisotropic etching of silicon, and…”
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    Journal Article
  14. 14

    MMW monolithic Y-junction circulator on single-crystal Sc-doped Ba-hexaferrite by Ping Shi, Hoton How, Xu Zuo, Oliver, S.A., McGruer, N.E., Vittoria, C.

    “…A monolithic circulator junction has been fabricated on a single-crystal Sc-doped Ba-hexaferrite film transferred onto a silicon substrate. Operation of the…”
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    Conference Proceeding Journal Article
  15. 15

    Theoretical modeling of microstrip thin-film circulators by How, H., Oliver, S.A., McKnight, S.W., Zavracky, P.M., McGruer, N.E., Vittoria, C.

    Published in IEEE transactions on magnetics (01-09-1997)
    “…We have calculated the S-parameters and losses in ferrite film junction circulators using a new effective-field theory assuming TEM-like propagation. At X-band…”
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    Journal Article
  16. 16

    200 nm gated field emitters by Huang, Z., McGruer, N.E., Warner, K.

    Published in IEEE electron device letters (01-03-1993)
    “…The fabrication and electrical characteristics of 200-nm chromium-gated silicon field emitters are reported. These gated emitters are the smallest yet…”
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    Journal Article
  17. 17

    Modeling and Measurement of the Dynamic Performance of an OHMIC Contact-Type RF MEMS Switch by Guo, Z.J., McGruer, N.E., Adams, G.G.

    “…A dynamic model has been developed to investigate the transient mechanical response of an ohmic contact-type RF MEMS switch. The model combines the built-in…”
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    Conference Proceeding
  18. 18

    The response of a microwave multipolar bucket plasma to a high voltage pulse by Qin, S., Chan, C., McGruer, N.E., Browning, J., Warner, K.

    Published in IEEE transactions on plasma science (01-12-1991)
    “…A collisional model that describes the response of a microwave multipolar bucket plasma to a high voltage pulse is developed for plasma source ion implantation…”
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    Journal Article
  19. 19

    Experimental observations of gated field emitter failures by Browning, J., McGruer, N.E., Bintz, W.J., Gilmore, M.

    Published in IEEE electron device letters (01-03-1992)
    “…Intrinsic failure events in gated field emitters have been studied. The gate-emitter voltage, typically 140 V during operation, drops to 10-70 V at the onset…”
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    Journal Article
  20. 20

    Adhesion and contact resistance in an electrostatic MEMS microswitch by Majumder, S., McGruer, N.E., Adams, G.G.

    “…A multi-asperity model of the contact resistance in a MEMS microswitch has been developed which includes the effects of elastic and plastic deformation,…”
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    Conference Proceeding