Search Results - "McDermott, B.T"

Ribosome profiling: Providing a snapshot of active protein translation by chondrocytic cells in response to interleukin-1β stimulation by McDermott, B.T, McDonagh, B, Clegg, P.D, Tew, S.R

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Longitudinal analysis of primary human articular chondrocyte transcriptomic regulation by interleukin 1β under hyperosmotic conditions by Tew, S.R, McDermott, B.T, Clegg, P.D

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Mapping novel protein interactions in the 3’utr of the master chondrocyte regulatory factor SOX9 by McDermott, B.T, Clegg, P.D, Tew, S.R

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Comprehensive protein profiling of synovial fluid in osteoarthritis by Peffers, M.J, McDermott, B.T, Riggs, C.M, Clegg, P.D

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RNA binding proteins regulate anabolic and catabolic gene expression in chondrocytes by McDermott, B.T, Ellis, S, Bou-Gharios, G, Clegg, P.D, Tew, S.R

“…Summary Objective Regulation of anabolic and catabolic factors is considered essential in maintaining the homoeostasis of healthy articular cartilage. In this…”
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High-power 10-GHz operation of AlGaN HFET's on insulating SiC by Sullivan, G.J., Chen, M.Y., Higgins, J.A., Yang, J.W., Chen, Q., Pierson, R.L., McDermott, B.T.

“…We report the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SiC substrates. A record total power of 2.3 W at 10…”
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Evidence for alternative polyadenylation of the ADAMTS5 mRNA creating a heterogenous pool of transcripts that differ in their response to post-transcriptional cues by McDermott, B.T., Chinaemerem, O., Tew, S.R.

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Ribosomal profiling and secretome analysis identify that interleukin-1B driven cytokine/chemokine release from chondrocytic cells is underpinned by differential translation by McDermott, B.T., Peffers, M.J., McDonagh, B., Tew, S.R.

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The RNA binding protein HuR is critical for effective differentiation of bone marrow derived stem cells by McDermott, B.T., Johnson, K.A., Hayati, H.F., Tew, S.R.

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Role of neutral base recombination in high gain AlGaAs/GaAs HBT's by Welser, R.E., Pan, N., Duy-Phach Vu, Zampardi, P.J., McDermott, B.T.

“…Neutral base recombination is a limiting factor controlling the maximum gain of AlGaAs/GaAs HBT's with base sheet resistances between 100 and 350 /spl…”
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Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design by Zampardi, P.J., Chang, C.E., Fitzsimmons, S., Pierson, R.L., McDermott, B.T., Chen, P.F., Asbeck, P.

“…We have demonstrated a heterojunction bipolar transistor using a novel compound collector (CCHBT) design that allows a low-knee voltage and high-breakdown…”
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MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP by El-Zein, N., Greiling, A., Koch, J., Stolz, W., Reinhard, S., McDermott, B.T.

“…(AlInGa)P red laser diodes have become increasingly attractive as light sources for various applications. High-quality AlInGaP and InGaP layers are of key…”
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High performance Al/sub 0.35/Ga/sub 0.65/As/GaAs HBT's by Welser, R.E., Pan, N., Lutz, C.R., Vu, D.P., Zampardi, P.J., Pierson, R.L., McDermott, B.T.

“…AlGaAs emitter heterojunction bipolar transistors (HBTs) are demonstrated to have excellent dc and RF properties comparable to InGaP/GaAs HBTs by increasing…”
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High performance Al0.35Ga0.65As/GaAs HBT's by Welser, R.E, Pan, N, Lutz, C.R, Vu, D.P, Zampardi, P.J, Pierson, R.L, McDermott, B.T

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Interface and material-quality study of InGaAsP/InP and InGaAsP/sub 1//InGaAsP/sub 2/ superlattices by El-Zein, N., McDermott, B.T.

“…We present work on the interface and material quality of InGaAsP/InP and InGaAsP/sub 1//InGaAsP/sub 2/ superlattices and multi-quantum-well (MQW) structures…”
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Heterostructure-based high-speed/high-frequency electronic circuit applications by Zampardi, P.J., Runge, K., Pierson, R.L., Higgins, J.A., Yu, R., McDermott, B.T., Pan, N.

“…With the growth of wireless and lightwave technologies, heterostructure electronic devices are commodity items in the commercial marketplace [Browne J…”
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Base recombination of high performance InGaAs/InP HBT's by Seabury, C.W., Farley, C.W., McDermott, B.T., Higgins, J.A., Lin, C.L., Kirchner, P.J., Woodall, J.M., Gee, R.C.

“…Summary form only given. The authors have measured the gain of InGaAs HBTs (heterojunction bipolar transistors) as a function of base doping, with Zn and Be,…”
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Highly doped GaInAs using diethylberyllium by MOCVD for InP-based heterostructure bipolar transistor applications by MCDERMOTT, B. T, SEABURY, C. W, FARLEY, C. W, HIGGINS, J. A

“…Title describes article content…”
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Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy by Bedair, S.M., McDermott, B.T., Reid, K.G., Neudeck, P.G., Cooper, J.A., Melloch, M.R.

“…Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of…”
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Carbon doped InP/GaAsSb HBTs via MOCVD by McDermott, B.T., Gertner, E.R., Pittman, S., Seabury, C.W., Chang, M.F.

“…Heterojunction bipolar transistors (HBTs) need heavily doped p-type regions. However, at high concentrations (>10/sup 19/ cm/sup -3/), most p-type dopants…”
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