Search Results - "McDermott, B. T."

Ageing does not result in a decline in cell synthetic activity in an injury prone tendon by Thorpe, C. T., McDermott, B. T., Goodship, A. E., Clegg, P. D., Birch, H. L.

“…Advancing age is a well‐known risk factor for tendon disease. Energy‐storing tendons [e.g., human Achilles, equine superficial digital flexor tendon (SDFT)]…”
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Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor by Dang, X. Z., Asbeck, P. M., Yu, E. T., Sullivan, G. J., Chen, M. Y., McDermott, B. T., Boutros, K. S., Redwing, J. M.

“…Low-field mobilities for electrons in the channel of an Al0.15Ga0.85N/GaN heterostructure field-effect transistor are derived from direct current transistor…”
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MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP by El-Zein, N., Greiling, A., Koch, J., Stolz, W., Reinhard, S., McDermott, B.T.

“…(AlInGa)P red laser diodes have become increasingly attractive as light sources for various applications. High-quality AlInGaP and InGaP layers are of key…”
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High-power 10-GHz operation of AlGaN HFET's on insulating SiC by Sullivan, G.J., Chen, M.Y., Higgins, J.A., Yang, J.W., Chen, Q., Pierson, R.L., McDermott, B.T.

“…We report the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SiC substrates. A record total power of 2.3 W at 10…”
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RNA binding proteins regulate anabolic and catabolic gene expression in chondrocytes by McDermott, B.T, Ellis, S, Bou-Gharios, G, Clegg, P.D, Tew, S.R

“…Summary Objective Regulation of anabolic and catabolic factors is considered essential in maintaining the homoeostasis of healthy articular cartilage. In this…”
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Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors by McDermott, B. T., Gertner, E. R., Pittman, S., Seabury, C. W., Chang, M. F.

“…GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated…”
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Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design by Zampardi, P.J., Chang, C.E., Fitzsimmons, S., Pierson, R.L., McDermott, B.T., Chen, P.F., Asbeck, P.

“…We have demonstrated a heterojunction bipolar transistor using a novel compound collector (CCHBT) design that allows a low-knee voltage and high-breakdown…”
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Atomic layer epitaxy of GaInP ordered alloy by MCDERMOTT, B. T, REID, K. G, EL-MASRY, N. A, BEDAIR, S. M, DUNCAN, W. M, YIN, X, POLLAK, F. H

“…We report on the successful growth of ordered GaInP by atomic layer epitaxy on a GaAs substrate. The growth was achieved by alternate exposures to TEI, PH3,…”
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Sidewall growth by atomic layer epitaxy by IDE, Y, MCDERMOTT, B. T, HASHEMI, M, BEDAIR, S. M, GOODHUE, W. D

“…Atomic layer epitaxy (ALE) has successfully been used to grow epitaxial layers over chemically etched grooves and dry etched sidewalls formed on GaAs(100)…”
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Atomic layer epitaxy of the Ga-As-In-As superalloy by MCDERMOTT, B. T, EL-MASRY, N. A, TISCHLER, M. A, BEDAIR, S. M

“…Ga-As-In-As superalloy has been grown by atomic epitaxy on InP substrates. This has been achieved by sequential exposure of the substrate to trimethylgallium,…”
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Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy by Bedair, S.M., McDermott, B.T., Reid, K.G., Neudeck, P.G., Cooper, J.A., Melloch, M.R.

“…Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of…”
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Atomic layer epitaxy of planar-doped structures for nonalloyed contacts and field-effect transistor by HASHEMI, M, RAMDANI, J, MCDERMOTT, B. T, REID, K, BEDAIR, S. M

“…Atomic layer epitaxy has been used for the low-temperature deposition of planar-doped structures using organometallic sources AsH3 and H2Se. Carrier…”
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Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy by NEUDECK, P. G, KLEINE, J. S, SHEPPARD, S. T, MCDERMOTT, B. T, BEDAIR, S. M, COOPER, J. A, MELLOCH, M. R

“…We report the electrical characterization of GaAs PiN junction diodes grown over the sidewalls of patterned trenches by atomic layer epitaxy. The diodes…”
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Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy by Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

“…Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces. The effects of in situ and ex…”
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Role of neutral base recombination in high gain AlGaAs/GaAs HBT's by Welser, R.E., Pan, N., Duy-Phach Vu, Zampardi, P.J., McDermott, B.T.

“…Neutral base recombination is a limiting factor controlling the maximum gain of AlGaAs/GaAs HBT's with base sheet resistances between 100 and 350 /spl…”
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High performance Al0.35Ga0.65As/GaAs HBT's by Welser, R.E, Pan, N, Lutz, C.R, Vu, D.P, Zampardi, P.J, Pierson, R.L, McDermott, B.T

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Metal/GaN Schottky barriers characterized by ballistic-electron-emission microscopy and spectroscopy by Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

“…Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to characterize the Pd/GaN and Au/GaN interfaces. BEEM spectra yield a Schottky…”
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Ballistic-electron-emission microscopy and spectroscopy of metal/GaN interfaces by Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

“…Ballistic-electron-emission microscopy (BEEM) spectroscopy and imaging have been applied to the Au/GaN interface. In contrast to previous BEEM measurements,…”
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Heterostructure-based high-speed/high-frequency electronic circuit applications by Zampardi, P.J., Runge, K., Pierson, R.L., Higgins, J.A., Yu, R., McDermott, B.T., Pan, N.

“…With the growth of wireless and lightwave technologies, heterostructure electronic devices are commodity items in the commercial marketplace [Browne J…”
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Highly doped GaInAs using diethylberyllium by MOCVD for InP-based heterostructure bipolar transistor applications by MCDERMOTT, B. T, SEABURY, C. W, FARLEY, C. W, HIGGINS, J. A

“…Title describes article content…”
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