Search Results - "McCrate, Joseph M"
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The role of surface charge on the uptake and biocompatibility of hydroxyapatite nanoparticles with osteoblast cells
Published in Nanotechnology (11-03-2011)“…The objective of this study is to evaluate the effect of hydroxyapatite (HAP) nanoparticles with different surface charges on the cellular uptake behavior and…”
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Detection of Low-Density Surface Sites on Silica: Experimental Evidence of Intrinsic Oxygen-Vacancy Defects
Published in Chemistry of materials (25-03-2014)“…Low-density sites on planar fused silica surfaces are studied by titration with fluorescent probe molecules in an ultrahigh vacuum environment. Intrinsic sites…”
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Titration of Free Hydroxyl and Strained Siloxane Sites on Silicon Dioxide with Fluorescent Probes
Published in Langmuir (24-09-2013)“…A technique enabling the detection and quantification of low density sites on planar SiO2 surfaces is demonstrated. Fluorescent probes are used to titrate free…”
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Chemical nature of active sites for defect-mediated nucleation on silicon dioxide
Published in AIChE journal (01-02-2016)“…Germanium nanoparticle growth on SiO2 proceeds via defect‐mediated nucleation and particle density can be enhanced by chemically treating the SiO2 with SiHx…”
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Coverage-Dependent Luminescence from Two-Dimensional Systems of Covalently Attached Perylene Fluorophores on Silica
Published in Journal of physical chemistry. C (30-01-2014)“…Photophysical processes occurring in two-dimensional systems of perylene derivatives covalently attached to planar silica surfaces are studied using a…”
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The Effects of Linking Substituents on the In Vivo Behavior of Site-directed, Peptide-based, Diagnostic Radiopharmaceuticals
Published in In vivo (Athens) (01-01-2007)“…A number of human cancers are known to over-express the gastrin-releasing peptide receptor (GRPr) on cell surfaces. The high specificity and affinity of…”
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Effect of subsurface boron on photoluminescence from silicon nanocrystals
Published in Surface science (01-04-2011)“…Silicon (Si) nanocrystals (NCs) less than 5 nm in diameter are grown on SiO 2 surfaces using hot wire chemical vapor deposition in an ultrahigh vacuum chamber…”
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Chemistry of Silicon Nanocrystal Surfaces Exposed to Ammonia
Published in Journal of physical chemistry. C (14-10-2010)“…Silicon nanocrystals (NCs) 8−10 nm in diameter are grown on SiO2 surfaces in an ultrahigh-vacuum chamber using hot wire chemical vapor deposition. These NCs…”
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Hot-wire CVD of Ge nanoparticles on Si-etched silicon dioxide
Published in Journal of crystal growth (15-04-2011)“…Germanium nanoparticles are grown on SiO 2 by hot-wire chemical vapor deposition of GeH 4. Etching of the silica surface by low doses of SiH x ( x=1, 2, 3)…”
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Effect of Surface Chemistry on Quantum Confinement and Photoluminescence of Ammonia-Passivated Silicon Nanocrystals
Published in The journal of physical chemistry letters (01-07-2010)“…Silicon (Si) nanocrystals (NCs) less than 5 nm in diameter are grown on SiO2 surfaces using hot wire chemical vapor deposition, and the dangling bonds and the…”
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Enhanced Nucleation of Pt Particles on Boron-Treated Highly Oriented Pyrolytic Graphite via Chemical Vapor Deposition
Published in Journal of physical chemistry. C (12-05-2011)“…The nucleation of Pt particles from CH3CpPt(CH3)3 on boron-treated highly oriented pyrolytic graphite (HOPG) was investigated. HOPG was enhanced with B from…”
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Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Published 29-07-2009“…Appl. Phys. Lett 95, 122102 (2009) Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC…”
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Graphene formation on SiC substrates
Published 29-07-2009“…Mater. Sci. Forum 615-617, 211 (2009) Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process…”
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Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Published 29-07-2009“…ECS Trans. 19, 137 (2009) Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum…”
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