Search Results - "McClelland, R W"
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Monolithic integration of a light-emitting diode array and a silicon circuit using transfer processes
Published in Applied physics letters (31-05-1993)“…This letter reports the attainment of a monolithically integrated light-emitting diode array on a silicon integrated circuit. The emitters are first formed…”
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A technique for producing epitaxial films on reuseable substrates
Published in Applied physics letters (15-09-1980)“…Using a new technique, which we have named the CLEFT process (cleavage of lateral epitaxial films for transfer), we have grown single-crystal GaAs films by…”
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Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth
Published in Applied physics letters (15-08-1982)“…Single-crystal GaAs layers have been obtained by means of lateral epitaxial overgrowth seeded within stripe openings in a SiO2 mask over GaAs layers grown on…”
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Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition
Published in Applied physics letters (15-09-1982)“…Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine,…”
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Planar GaAs p-i-n photodiode with picosecond time response
Published in Applied physics letters (15-01-1985)“…A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in…”
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6
Minority-carrier lifetime in GaAs thin films
Published in Applied physics letters (15-08-1988)“…Double-heterostructure devices of type AlxGa1−xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process…”
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Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide
Published in Applied physics letters (01-03-1981)“…We report the successful demonstration of a new type of single-mode semiconductor waveguide, an oxide-confined optical waveguide, that has lower loss and…”
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8
A self-aligned dual-grating GaAs permeable base transistor
Published in IEEE electron device letters (01-07-1984)“…A self-aligned technique has been developed for embedding two submicrometer-period W gratings, one above the other in single-crystal GaAs. This technique has…”
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Lightweight tandem GaAs/CuInSe2 solar cells
Published in IEEE transactions on electron devices (01-02-1990)“…High-efficiency, ultralightweight, mechanically stacked 4-sq cm thin-film tandem solar cells are discussed. The tandem stack consists of a single- crystal,…”
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Optical approaches to incorporation of displays within eyeglasses
Published in Journal of the Society for Information Display (01-12-1998)“…— We report the development of a new approach to design and fabrication of eyeglass‐based displays. The principal feature of this technique is the…”
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Journal Article Conference Proceeding -
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Class Sizes, Faculty Workloads, and Program Structures: How MSW Programs Have Responded to Changes in their Environments
Published in Journal of social work education (01-04-1997)“…This article reports on results from a survey of how U.S. and Canadian MSW programs have responded to increased enrollments and fixed resources. Descriptive…”
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Effects of dry etching on GaAs
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-10-1983)“…A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch…”
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Trends in Student-Faculty Ratios and the Use of Non-Tenure-Track Faculty in MSW Programs
Published in Journal of social work education (01-04-1997)“…This article reports on a study of enrollment trends, staffing patterns, and student-faculty ratios in master's degree programs in social work and three…”
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14
Ultrathin, high-efficiency solar cells made from GaAs films prepared by the CLEFT Process
Published in IEEE electron device letters (01-08-1981)“…Solar cells with conversion efficiencies as high as 17% at AM1 have been fabricated from single-crystal 10-µm-thick GaAs films prepared by the CLEFT process…”
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MP-B6 low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide
Published in IEEE transactions on electron devices (01-11-1980)Get full text
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VIB-5 millimeter-wavelength GaAs permeable base transistors
Published in IEEE transactions on electron devices (01-10-1982)Get full text
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High-efficiency thin-film AlGaAs-GaAs double heterostructure solar cells
Published in Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference (1988)“…AlGaAs-GaAs double-heterostructure solar cells were fabricated in 10 mu m-thick films and exhibited one-sun, total-area conversion efficiencies up to 19.5%…”
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Conference Proceeding -
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Community Development with Older Adults in Their Neighborhoods: The Elder Friendly Communities Program
Published in Families in society (01-07-2005)“…In this article, the authors report on lessons drawn from more than 3 years of experience with seniors-led community development at the neighborhood level, the…”
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Journal Article -
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37.1: Optical Approaches To Incorporation of Displays Within Eyeglasses
Published in SID International Symposium Digest of technical papers (01-05-1998)“…We report the development of a new approach to design and fabrication of eyeglass‐based displays. The principal feature of this technique is the incorporation…”
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