Search Results - "McCandless, Jonathan P"

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage by Chabak, Kelson D., Moser, Neil, Green, Andrew J., Walker, Dennis E., Tetlak, Stephen E., Heller, Eric, Crespo, Antonio, Fitch, Robert, McCandless, Jonathan P., Leedy, Kevin, Baldini, Michele, Wagner, Gunter, Galazka, Zbigniew, Li, Xiuling, Jessen, Gregg

“…Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating…”
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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition by Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

“…Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3…”
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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge by Moser, Neil A., McCandless, Jonathan P., Crespo, Antonio, Leedy, Kevin D., Green, Andrew J., Heller, Eric R., Chabak, Kelson D., Peixoto, Nathalia, Jessen, Gregg H.

“…We report on Sn-doped β -Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 × 1018 to 1.6 × 1018 cm−3 and a fixed…”
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Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy by Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffman, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.

“…This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—which enables a drastic enhancement in the growth rates of Ga2O3 and related…”
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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs by Chabak, Kelson D., McCandless, Jonathan P., Moser, Neil A., Green, Andrew J., Mahalingam, Krishnamurthy, Crespo, Antonio, Hendricks, Nolan, Howe, Brandon M., Tetlak, Stephen E., Leedy, Kevin, Fitch, Robert C., Wakimoto, Daiki, Sasaki, Kohei, Kuramata, Akito, Jessen, Gregg H.

“…We report enhancement-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 (BGO) MOSFETs on a Si-doped homoepitaxial…”
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Proton radiation effects on optically transduced silicon carbide microdisk resonators by Jia, Hao, McCandless, Jonathan P., Chen, Hailong, Liao, Wenjun, Zhang, En Xia, McCurdy, Michael, Reed, Robert A., Schrimpf, Ronald D., Alles, Michael L., Feng, Philip X.-L.

“…Circular microdisk mechanical resonators vibrating in their various resonance modes have emerged as important platforms for a wide spectrum of technologies…”
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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy by Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

“…We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from…”
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Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] by Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffmann, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.

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Silicon-doped β -Ga2O3 films grown at 1 µ m/h by suboxide molecular-beam epitaxy by Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

“…We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from…”
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Very High Frequency Stability of Single-Crystal Silicon Thermal-Piezoresistive Resonators with Phase-Locked Loop by Watkins, Connor A., Lee, Jaesung, McCandless, Jonathan P., Hall, Harris J., Feng, Philip X.-L.

“…This paper reports on a single-crystal silicon (Si) thermal-piezoresistive resonator (TPR) achieving very high frequency stability in phase-locked loop (PLL)…”
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Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy by Vogt, Patrick, Hensling, Felix V. E, Azizie, Kathy, McCandless, Jonathan P, Park, Jisung, DeLello, Kursti, Muller, David A, Xing, Huili G, Jena, Debdeep, Schlom, Darrell G

“…We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular…”
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Silicon-doped $\beta$-Ga$_2$O$_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy by Azizie, Kathy, Hensling, Felix V. E, Gorsak, Cameron A, Kim, Yunjo, Dryden, Daniel M, Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A, Birkhölzer, Yorick A, McCandless, Jonathan P, Jena, Debdeep, Xing, Huili G, Liu, Zi-Kui, Williams, Michael D, Green, Andrew J, Chabak, Kelson, Neal, Adam T, Mou, Shin, Thompson, Michael O, Nair, Hari P, Schlom, Darrell G

“…We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $\beta$-Ga$_2$O$_3$ at a growth rate of ~1 ${\mu}$m/h with control of the silicon doping…”
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Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy by Vogt, Patrick, Hensling, Felix V. E, Azizie, Kathy, Chang, Celesta S, Turner, David, Park, Jisung, McCandless, Jonathan P, Paik, Hanjong, Bocklund, Brandon J, Hoffman, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G, Mou, Shin, Muller, David A, Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G

“…This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates…”
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