Search Results - "McCall, S. L."

Whispering-gallery mode microdisk lasers by MC CALL, S. L, LEVI, A. F, SLUSHER, R. E, PEARTON, S. J, LOGAN, R. A

“…A new microlaser design based on the high-reflectivity whispering-gallery modes around the edge of a thin semiconductor microdisk is described and initial…”
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Threshold characteristics of semiconductor microdisk lasers by SLUSHER, R. E, LEVI, A. F. J, MOHIDEEN, U, MCCALL, S. L, PEARTON, S. J, LOGAN, R. A

“…This letter describes the threshold characteristics of InGaAs/InGaAsP microdisk lasers with optical emission near a wavelength λ=1.52 μm. More than 5% of the…”
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Microwave propagation in two-dimensional dielectric lattices by MCCALL, S. L, PLTAZMAN, P. M

“…The properties of X-band microwaves propagating in a 2D array of low-loss high-dielectric constant cylinders are calculated and measured. Transmission bands…”
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Directional light coupling from microdisk lasers by LEVI, A. F. J, SLUSHER, R. E, MCCALL, S. L, GLASS, J. L, PEARTON, S. J, LOGAN, R. A

“…We describe methods for directional coupling of light output from whispering-gallery mode microdisk lasers. Patterned asymmetries in the shape of microdisk…”
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Lasing from excitons in quantum wires by WEGSCHEIDER, W, PFEIFFER, L. N, DIGNAM, M. L, PINCZUK, A, WEST, K. W, MCCALL, S. L, HULL, R

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Microwave localization by two-dimensional random scattering by Dalichaouch, Rachida, Armstrong, J. P, Schultz, S, Platzman, P. M, McCall, S. L

“…Measurements of the electric-field energy density for microwave radiation localized in essentially two-dimensional space by scattering from a random array of…”
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Room-temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes by LEVI, A. F. J, SLUSHER, R. E, MCCALL, S. L, PEARTON, S. J, HOBSON, W. S

“…We report room-temperature operation of electrically pumped whispering-gallery mode In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes with emission at…”
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GaAs-AlAs monolithic microresonator arrays by JEWELL, J. L, SCHERER, A, MCCALL, S. L, GODDARD, A. C, ENGLISCH, J. H

“…Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam…”
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Multiple quantum well reflection modulator by BOYD, G. D, MILLER, D. A. B, CHEMLA, D. S, MCCALL, S. L, GOSSARD, A. C, ENGLISH, J. H

“…We demonstrated a quantum-confined Stark effect electroabsorption modulator consisting of quantum wells of AlGaAs and GaAs on an epitaxial multilayer…”
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Vertical cavity single quantum well laser by JEWELL, J. L, HUANG, K. F, TAI, K, LEE, Y. H, FISCHER, R. J, MCCALL, S. L, CHO, A. Y

“…We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing…”
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Lasing characteristics of GaAs microresonators by JEWELL, J. L, MCCALL, S. L, LEE, Y. H, SCHERER, A, GOSSARD, A. C, ENGLISH, J. H

“…Lasing characteristics of optically pumped 1.5-μm-diam GaAs-AlAs microresonators are reported. Room-temperature thresholds of 9 pJ were observed. Uniform…”
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Transverse modes, waveguide dispersion, and 30 ps recovery in submicron GaAs/AlAs microresonators by JEWELL, J. L, MCCALL, S. L, SCHERER, A, HOUH, H. H, WHITAKER, N. A, GOSSARD, A. C, ENGLISH, J. H

“…We have studied room-temperature optical gating of ∼5 ps pulses in GaAs/AlAs microresonators with diameters ranging from <0.5 μm to 1.5 μm by using a…”
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Optical bistability in semiconductors by Gibbs, H. M., McCall, S. L., Venkatesan, T. N. C., Gossard, A. C., Passner, A., Wiegmann, W.

“…Optical bistability has been observed in a semiconductor for the first time. The bistable etalon consists of a GaAlAs-GaAs-GaAlAs…”
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High index contrast mirrors for optical microcavities by SENG-TIONG HO, MCCALL, S. L, SLUSHER, R. E, PFEIFFER, L. N, WEST, K. W, LEVI, A. F. J, BLONDER, G. E, JEWELL, J. L

“…A new technique for constructing multilayer dielectric mirrors is described that results in high reflectivities with only two or three dielectric layer pairs…”
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Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon by Gibbs, H. M., Tarng, S. S., Jewell, J. L., Weinberger, D. A., Tai, K., Gossard, A. C., McCall, S. L., Passner, A., Wiegmann, W.

“…The quantum wells provided by a superlattice increase the binding energy of the free excitons in GaAs, permitting 300 K bistable operation of a superlattice…”
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Optical measurement of surface recombination in InGaAs quantum well mesa structures by Tai, K., Hayes, T. R., McCall, S. L., Tsang, W. T.

“…Surface recombination of optically created electron-hole plasma in InGaAs/InP quantum well mesa structures formed by chemical beam epitaxy followed by…”
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High-finesse (Al, Ga)As interference filters grown by molecular beam epitaxy by JEWELL, J. L, LEE, Y. H, MCCALL, S. L, HARBISON, J. P, FLOREZ, L. T

“…We have measured finesse values of at least 160 in (Al,Ga)As Fabry–Perot interference filters grown by molecular beam epitaxy. Losses are low and the finesses…”
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Differential Gain and Bistability Using a Sodium-Filled Fabry-Perot Interferometer by Gibbs, H. M., McCall, S. L., Venkatesan, T. N. C.

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Nonrandom doping and elastic scattering of carriers in semiconductors by LEVI, A. F. J, MCCALL, S. L, PLATZMAN, P. M

“…High-density delta doping of semiconductors may result in partial ordering of dopant atoms. Under suitable circumstances, periodic delta doping leads to…”
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Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength by Tai, K., McCall, S. L., Chu, S. N. G., Tsang, W. T.

“…An interference mirror for use near 1.55 μm wavelength was constructed using InP and lattice-matched InGaAsP on an InP substrate with chemical beam epitaxy…”
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