Search Results - "Mauk, M.G"
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Generation of electricity using InGaAsSb and GaSb TPV cells in combustion-driven radiant sources
Published in Solar energy materials and solar cells (06-01-2006)“…Electric power generation using InGaAsSb and GaSb thermophotovoltaic (TPV) cells was investigated in a gas-fired heating furnace. Electric output…”
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Journal Article -
2
High current, thin silicon-on-ceramic solar cell
Published in IEEE transactions on electron devices (01-10-1999)“…Thin-film polycrystalline silicon solar cells offer the potential to achieve 19% efficient photovoltaic power conversion. Well-designed, 20-100 micron thick,…”
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3
A model for anisotropic epitaxial lateral overgrowth
Published in Journal of crystal growth (01-06-2002)“…The model for anisotropic crystal growth on a substrate covered by a mask material with a periodic series of parallel long trenches where the substrate is…”
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Journal Article -
4
A model for isotropic crystal growth from vapor on a patterned substrate
Published in Journal of crystal growth (01-02-2002)“…We developed a consistent mathematical model for isotropic crystal growth on a substrate covered by the mask material with a periodic series of parallel long…”
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Journal Article -
5
Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic–photoelectrolysis cells
Published in Journal of crystal growth (01-05-2001)“…Photovoltaic–photoelectrochemical (PV-PEC) cells based on InGaP/GaAs show excellent prospects for efficient production of hydrogen by electrolysis of water…”
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Journal Article Conference Proceeding -
6
Liquid-phase epitaxy of low-bandgap III–V antimonides for thermophotovoltaic devices
Published in Journal of crystal growth (01-04-2000)“…Liquid-phase epitaxial (LPE) growth of low-bandgap III–V antimonides is developed for thermophotovoltaic and other optoelectronic device applications…”
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7
Infrared free carrier response of In 0.15Ga 0.85As 0.17Sb 0.83 epilayers on GaSb
Published in Thin solid films (1998)“…Fourier transform infrared variable angle spectroscopic ellipsometry (0.089–0.620 eV) was used to investigate undoped and Te doped epilayers of In 0.15Ga…”
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8
High current, thin silicon-on-ceramic solar cell
Published in Solar energy materials and solar cells (01-02-2001)“…Solar cells utilizing thin-film polycrystalline silicon can achieve photovoltaic power conversion efficiencies greater than 19%. These high efficiencies are a…”
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Journal Article Conference Proceeding -
9
Hydrogen in polycrystalline silicon solar cell material: Its role and characteristics
Published in Solar energy materials and solar cells (01-06-1998)“…The role and the characteristics of hydrogen in different polycrystalline silicon material are studied in this paper. The hydrogen diffusion through the grains…”
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10
Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb
Published in Thin solid films (01-02-1998)Get full text
Journal Article -
11
Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system
Published in Journal of crystal growth (01-04-2000)“…We describe the design, operation, and performance of a high-throughput, large-scale liquid-phase epitaxy system for producing semiconductor optoelectronic…”
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Journal Article Conference Proceeding -
12
Polycrystalline GaAs solar cells on low-cost Silicon-Film/sup TM/ substrates
Published in Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 (1997)“…The authors assess the potential of a low-cost, large-area Silicon-Film/sup TM/ sheet as a substrate for thin-film polycrystalline GaAs solar cells…”
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Conference Proceeding -
13
Study of novel chemical surface passivation techniques on GaAs pn junction solar cells
Published in Applied physics letters (16-01-1989)Get full text
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14
Selective heteroepitaxy of InGaP/GaAs/silicon devices as low-cost photovoltaic/photoelectrolysis cells for generating hydrogen from sunlight
Published in Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) (2000)“…InGaP/GaAs photovoltaic-photoelectrochemical (PV-PEC) cells made by MOCVD on GaAs substrates have demonstrated high conversion efficiencies for the direct…”
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Conference Proceeding -
15
Advances in low-bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics
Published in Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) (2000)“…Thermophotovoltaic devices based on InGaAsSb and InAsSbP alloys made by liquid-phase epitaxy are described. These alloys can be readily grown as thick (>50…”
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Conference Proceeding -
16
Low-bandgap (0.3 to 0.5 eV) InAsSbP thermophotovoltaics: assessment for open-circuit voltage improvements
Published in 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of (2003)“…The spectral response of thermophotovoltaic cells can be considerably extended (compared to that of most current TPV technologies) with devices made in the…”
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Conference Proceeding -
17
Solar-grade silicon: the next decade
Published in 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of (2003)“…We survey the current silicon feedstock situation and its implications for silicon solar cell production. Prospects for Siemens-type processes (i.e.,…”
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Conference Proceeding -
18
Materials technologies for making GaAs-based solar cells on low-cost ceramics
Published in 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of (2003)“…Large-grain (>1-mm) germanium-on-ceramic substrates are developed for GaAs solar cells. Thin (2- to 5- micron) films of germanium are deposited on…”
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Conference Proceeding -
19
Recent progress in InGaAsSb/GaSb TPV devices
Published in Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 (1996)“…AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase…”
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Conference Proceeding -
20
Silicon-Film/sup TM/ solar cells
Published in ICM'99. Proceedings. Eleventh International Conference on Microelectronics (IEEE Cat. No.99EX388) (1999)“…The Silicon-Film/sup TM/ process is being employed to develop two new solar cell products. The first is on an accelerated path to large-scale manufacturing. A…”
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Conference Proceeding