Search Results - "Mauguin, O."

GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity by Pelati, D., Patriarche, G., Mauguin, O., Largeau, L., Travers, L., Brisset, F., Glas, F., Oehler, F.

“…•First report of GaAs (111)A on Ge (111) using MBE.•No antiphase domain form during the growth of GaAs(111) A/Ge(111).•Twinned domains are the main defects…”
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Optical spectroscopy of two-dimensional layered (C_6H_5C_2H_4-NH_3)_2-PbI_4 perovskite by Gauthron, K., Lauret, J-S., Doyennette, L., Lanty, G., Al Choueiry, A., Zhang, S. J., Brehier, A., Largeau, L., Mauguin, O., Bloch, J., Deleporte, E.

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Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma by Pelati, D., Mauguin, O., Largeau, L., Brisset, F., Glas, F., Oehler, F.

“…The fabrication of strongly-textured thin crystalline germanium layers on amorphous silica substrates can be achieved by aluminium induced crystallization…”
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Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge by Pelati, D, Patriarche, G, Mauguin, O, Largeau, L, Brisset, F, Glas, F, Oehler, F

“…We use high-resolution optical microscopy to characterize in situ the processes at play during the Al-induced crystallization of amorphous Ge. In addition to…”
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Bloch oscillations of THz acoustic phonons in coupled nanocavity structures by Lanzillotti-Kimura, N D, Fainstein, A, Perrin, B, Jusserand, B, Mauguin, O, Largeau, L, Lemaître, A

“…Nanophononic Bloch oscillations and Wannier-Stark ladders have been recently predicted to exist in specifically tailored structures formed by coupled…”
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High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition by Jakomin, R., de Kersauson, M., El Kurdi, M., Largeau, L., Mauguin, O., Beaudoin, G., Sauvage, S., Ossikovski, R., Ndong, G., Chaigneau, M., Sagnes, I., Boucaud, P.

“…We show that high quality tensile-strained n -doped germanium films can be obtained on InGaAs buffer layers using metal-organic chemical vapor deposition with…”
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Silicon surface preparation for III-V molecular beam epitaxy by Madiomanana, K., Bahri, M., Rodriguez, J.B., Largeau, L., Cerutti, L., Mauguin, O., Castellano, A., Patriarche, G., Tournié, E.

“…We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ…”
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Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon by Talneau, A., Roblin, C., Itawi, A., Mauguin, O., Largeau, L., Beaudouin, G., Sagnes, I., Patriarche, G., Pang, C., Benisty, H.

“…An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no…”
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Coherent generation and detection of acoustic phonons in topological nanocavities by Arregui, G., Ortíz, O., Esmann, M., Sotomayor-Torres, C. M., Gomez-Carbonell, C., Mauguin, O., Perrin, B., Lemaître, A., García, P. D., Lanzillotti-Kimura, N. D.

“…Inspired by concepts developed for fermionic systems in the framework of condensed matter physics, topology and topological states are recently being explored…”
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Deep structural analysis of novel BGaN material layers grown by MOVPE by Gautier, S., Patriarche, G., Moudakir, T., Abid, M., Orsal, G., Pantzas, K., Troadec, D, Soltani, A., Largeau, L., Mauguin, O., Ougazzaden, A.

“…BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated…”
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Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers by Lemaître, A., Miard, A., Travers, L., Mauguin, O., Largeau, L., Gourdon, C., Jeudy, V., Tran, M., George, J.-M.

“…A small fraction of phosphorus (up to 10%) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the…”
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Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO by Pantzas, K., Rogers, D.J., Bove, P., Sandana, V.E., Teherani, F.H., El Gmili, Y., Molinari, M., Patriarche, G., Largeau, L., Mauguin, O., Suresh, S., Voss, P.L., Razeghi, M., Ougazzaden, A.

“…p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry…”
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Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate by Mangeney, J., Laurent, T., Martin, M., Harmand, J. C., Travers, L., Mauguin, O.

“…We study the carrier relaxation dynamics in Ga 1−y In y N 0.03 As 0.97 layers grown on InP substrate by molecular beam epitaxy. This dilute nitride…”
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Tuning the ferromagnetic properties of hydrogenated GaMnAs by Thevenard, L., Largeau, L., Mauguin, O., Lemaître, A., Theys, B.

“…Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment…”
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Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer by Riahi, H., Ouerghui, W., Thevenard, L., Gourdon, C., Maaref, M.A., Lemaître, A., Mauguin, O., Testelin, C.

“…Vibrating Sample Magnetometer measurements were performed on a ferromagnetic (Ga,Mn)As thin film. We report Curie temperature (Tc) up to 142K in an annealed…”
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Atomic structure of tip apex for spin-polarized scanning tunneling microscopy by Rodary, G., Girard, J.-C., Largeau, L., David, C., Mauguin, O., Wang, Z.-Z.

“…We present a high resolution transmission electron microscopy study of a Cr-coated W tip apex prepared for spin-polarized scanning tunneling microscopy…”
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Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01) by CHENG, J, REGRENY, P, LARGEAU, L, PATRIARCHE, G, MAUGUIN, O, NAJI, K, HOLLINGER, G, SAINT-GIRONS, G

“…A study of the epitaxial growth of InP on SrTiO3(0 0 1) (STO) substrates is presented. Reflection high energy electron diffraction (RHEED) and X-ray…”
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Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices by Tran, M., Peiro, J., Jaffrès, H., George, J.-M., Mauguin, O., Largeau, L., Lemaître, A.

“…We report on experimental evidence of a magnetization-controlled conductance in AlAs/GaAs/AlAs resonant tunneling diodes contacted by a (Ga,Mn)As ferromagnetic…”
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Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C by Labrune, M., Bril, X., Patriarche, G., Largeau, L., Mauguin, O., Roca i Cabarrocas, P.

“…We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on…”
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