Search Results - "Mauder, C"

Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers by Yacoub, H., Mauder, C., Leone, S., Eickelkamp, M., Fahle, D., Heuken, M., Kalisch, H., Vescan, A.

“…The effect of different carbon doping techniques on the dynamic behavior of GaN-on-Si buffer was investigated. Intentional doping using a hydrocarbon precursor…”
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Growth Studies on Quaternary AlInGaN Layers for HEMT Application by Reuters, Benjamin, Wille, A., Holländer, B., Sakalauskas, E., Ketteniss, N., Mauder, C., Goldhahn, R., Heuken, M., Kalisch, H., Vescan, A.

“…Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because of the possible…”
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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates by MAUDER, C, REUTERS, B, HEUKEN, M, KALISCH, H, JANSEN, R. H, WANG, K. R, FAHLE, D, TRAMPERT, A, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, CHOU, M. M. C

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On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE by Mauder, C., Booker, I.D., Fahle, D., Boukiour, H., Behmenburg, H., Rahimzadeh Khoshroo, L., Woitok, J.F., Vescan, A., Heuken, M., Kalisch, H., Jansen, R.H.

“…We highlight the challenges of GaN growth on (1 1 0)-oriented Si substrates with respect to the substrate-induced anisotropic strain state. A 5:4 lattice…”
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MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates by HANG, D. R, CHOU, Mitch M. C, MAUDER, C, HEUKEN, M

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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates by MAUDER, C, REUTERS, B, RAHIMZADEH KHOSHROO, L, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, HEUKEN, M, KALISCH, H, JANSEN, R. H

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High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates by MIASOJEDOVAS, S, MAUDER, C, KROTKUS, S, KADYS, A, MALINAUSKAS, T, JARASIUNAS, K, HEUKEN, M, KALISCH, H, VESCAN, A

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Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures by Lutsenko, E. V., Rzheutski, M. V., Pavlovskii, V. N., Alyamani, A., Aljohenii, M., Aljerwii, A., Mauder, C., Reuters, B., Kalisch, H., Heuken, M., Vescan, A.

“…Nonpolar m-plane InGaN/GaN light emitting diode structures with quantum well (QW) were grown on LiAlO 2 (100) substrates. Their photoluminescence and…”
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The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface by Yacoub, H., Eickelkamp, M., Fahle, D., Mauder, C., Alam, A., Heuken, M., Kalisch, H., Vescan, A.

“…In recent years, GaN grown on silicon substrates (GaN-on-Si) managed to offer a commercial solution for harvesting the advantages of GaN-based devices whilst…”
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Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates by Mauder, C., Wang, K. R., Reuters, B., Behmenburg, H., Khoshroo, L. Rahimzadeh, Wan, Q., Trampert, A., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J. F., Heuken, M., Kalisch, H., Jansen, R. H.

“…We used metal organic vapour phase epitaxy (MOVPE) to deposit m‐plane GaN layers on LiAlO2 substrates and studied the influence of the V/III ratio during…”
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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates by MAUDER, C, RAHIMZADEH KHOSHROO, L, KALISCH, H, JANSEN, R. H, BEHMENBURG, H, WEN, T. C, DIKME, Y, RZHEUTSKII, M. V, YABLONSKII, G. P, WOITOK, J, CHOU, M. M. C, HEUKEN, M

“…We deposited pure m-plane GaN (1 1_ 0 0) layers on LiAlO2 (1 0 0) substrates by MOVPE using Mg-doped InGaN buffer layers of various thickness. These sealing…”
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m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE by Behmenburg, H., Wen, T. C., Dikme, Y., Mauder, C., Khoshroo, L. Rahimzadeh, Chou, M. M. C., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J., Kalisch, H., Jansen, R. H., Heuken, M.

“…We present a study of growth and properties of m ‐plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A…”
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Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope by Naresh-Kumar, G., Mauder, C., Wang, K. R., Kraeusel, S., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kalisch, H., Vescan, A., Giesen, C., Heuken, M., Trampert, A., Day, A. P., Trager-Cowan, C.

“…Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as…”
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Optical and structural properties of GaN epitaxial layers on LiAlO sub(2) substrates and their correlation with basal-plane stacking faults by Lutsenko, E V, Rzheutski, M V, Pavlovskii, V N, Yablonskii, G P, Alanzi, M, Hamidalddin, A, Alyamani, A, Mauder, C, Kalisch, H, Reuters, B, Heuken, M, Vescan, A, Naresh-Kumar, G, Trager-Cowan, C

“…The optical and structural properties of m-plane GaN layers grown by metal organic vapor phase epitaxy on LiAlO sub(2) (100) substrates were investigated…”
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Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults by Lutsenko, E.V., Rzheutski, M.V., Pavlovskii, V.N., Yablonskii, G.P., Alanzi, M., Hamidalddin, A., Alyamani, A., Mauder, C., Kalisch, H., Reuters, B., Heuken, M., Vescan, A., Naresh-Kumar, G., Trager-Cowan, C.

“…The optical and structural properties of m-plane GaN layers grown by metal organic vapor phase epitaxy on LiAlO2 (100) substrates were investigated…”
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Striated surface morphology and crystal orientation of m-plane GaN films grown on γ-LiAlO2(100) by Wang, K. R., Ramsteiner, M., Mauder, C., Wan, Q., Hentschel, T., Grahn, H. T., Kalisch, H., Heuken, M., Jansen, R. H., Trampert, A.

“…Polarized in-plane and cross-sectional Raman spectra have been used to determine the crystal orientation of m-plane GaN grown on γ-LiAlO2(100) (LAO) using a…”
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Irregular spectral position of E || c component of polarized photoluminescence from m -plane InGaN/GaN multiple quantum wells grown on LiAlO2 by Mauder, C., Lutsenko, E. V., Rzheutski, M. V., Reuters, B., Zubialevich, V. Z., Pavlovskii, V. N., Yablonskii, G. P., Heuken, M., Kalisch, H., Vescan, A.

“…Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on…”
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MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO 2 substrates by Hang, D.R., Chou, Mitch M.C., Mauder, C., Heuken, M.

“…We report on growth as well as structural and optical properties of m-plane InGaN/GaN multiple quantum wells (MQWs) grown on LiAlO 2 substrate by metal–organic…”
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Irregular spectral position of E || c component of polarized photoluminescence from m -plane InGaN/GaN multiple quantum wells grown on LiAlO 2 by Mauder, C., Lutsenko, E. V., Rzheutski, M. V., Reuters, B., Zubialevich, V. Z., Pavlovskii, V. N., Yablonskii, G. P., Heuken, M., Kalisch, H., Vescan, A.

“…Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on…”
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High-excitation luminescence properties of m-plane GaN grown on LiAlO sub(2 substrates) by Miasojedovas, S, Mauder, C, Krotkus, S, Kadys, A, Malinauskas, T, Jarasiu-Nas, K, Heuken, M, Kalisch, H, Vescan, A

“…Optically induced carrier dynamics was investigated in highly excited m-plane GaN films grown by metalorganic vapor phase epitaxy (MOVPE) on LiAlO sub(2…”
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