Search Results - "Matveyev, Y. A."

5 7 Fe Emission Mössbauer Study on Gd 3 Ga 5 O 1 2 implanted with dilute 5 7 Mn by Krastev, P. B., Gunnlaugsson, H. P., Nomura, K., Adoons, V., Gerami, A. M., Johnston, K., Ncube, M., Mantovan, R., Masenda, H., Matveyev, Y. A., Mølholt, T. E., Unzueta, I., Bharuth-Ram, K., Gislason, H., Langouche, G., Naidoo, D., Ólafsson, S.

“…57Fe emission Mössbauer spectroscopy has been applied to study the lattice location and properties of Fe in gadolinium gallium garnet Gd3Ga5O12 (GGG) single…”
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57Fe emission Mössbauer spectroscopy following dilute implantation of 57Mn into In 2O3 by Mokhles Gerami, A., Johnston, K., Gunnlaugsson, H. P., Nomura, K., Mantovan, R., Masenda, H., Matveyev, Y. A., Mølholt, T. E., Ncube, M., Shayestehaminzadeh, S., Unzueta, I., Gislason, H. P., Krastev, P. B., Langouche, G., Naidoo, D., Ólafsson, S.

“…Emission Mössbauer spectroscopy has been utilised to characterize dilute 57 Fe impurities in In 2 O 3 following implantation of 57 Mn ( T 1/2 = 1.5 min.) at…”
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57Fe Emission Mössbauer Study on Gd3Ga5O12 implanted with dilute57Mn by Krastev, P. B., Gunnlaugsson, H. P., Nomura, K., Adoons, V., Gerami, A. M., Johnston, K., Ncube, M., Mantovan, R., Masenda, H., Matveyev, Y. A., Mølholt, T. E., Unzueta, I., Bharuth-Ram, K., Gislason, H., Langouche, G., Naidoo, D., Ólafsson, S.

“…57 Fe emission Mössbauer spectroscopy has been applied to study the lattice location and properties of Fe in gadolinium gallium garnet Gd 3 Ga 5 O 12 (GGG)…”
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METHODOLOGICAL PLATFORM OF RESEARCH OF THE INTERDEPENDENT SYSTEM “COMPETITIVENESS – SAFETY” by I. P. Danilov, S. Y. Mikhailova, V. V. Nikitin, Y. A. Matveyev

“…Objective: To define the complex of methods used in research of the interdependent system “competitiveness – safety”. Methods: Analysis, synthesis, comparison…”
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Design and fabrication of low noise MODFET for 30-60 GHz band by Zubkov, A.M., Korablin, A.S., Matveyev, Y.A., Cherniavskiy, A.A., Dorofeyev, A.A.

“…Described in this paper are unified design and electronic lithography-based technology of production of low-noise Schottky FETs. HEMT and PHEMT series for 3-60…”
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