High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches

High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches

The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite b...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 52; no. 4; pp. 478 - 484
Main Authors: Bagraev, N. T., Klyachkin, L. E., Khromov, V. S., Malyarenko, A. M., Mashkov, V. A., Matveev, T. V., Romanov, V. V., Rul’, N. I., Taranets, K. B.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 01-04-2018
Springer
Springer Nature B.V
Subjects:
2017. Transport In Heterostructures
Bosons
Carrier density
Channels
Confining
Cooling effects
De Haas-Van Alphen effect
ELECTRON-ELECTRON COLLISIONS
ELECTRON-ELECTRON COUPLING
ELECTRON-ELECTRON INTERACTIONS
Fermions
High temperature
June 26–30
Magnetic fields
MAGNETIC FLUX
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
QUANTUM WELLS
Resistance
Saint Petersburg
Sandwich structures
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0400-1000 K
XXV International Symposium “Nanostructures: Physics and Technology”
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Summary:The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618040061