Search Results - "Matus, Lawrence G."

Instrumentation for Aerospace Applications: Electronic-Based Technologies by Matus, Lawrence G

“…AbstractThroughout the 70-year history of the National Aeronautics and Space Administration (NASA) Glenn Research Center (GRC), instrumentation engineers have…”
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Site-competition epitaxy for superior silicon carbide electronics by Larkin, David J., Neudeck, Philip G., Powell, J. Anthony, Matus, Lawrence G.

“…We present and discuss a novel dopant control technique for compound semiconductors, called site-competition epitaxy, which enables a much wider range of…”
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Growth of step-free surfaces on device-size (0001)SiC mesas by Powell, J. Anthony, Neudeck, Philip G., Trunek, Andrew J., Beheim, Glenn M., Matus, Lawrence G., Hoffman, Richard W., Keys, Luann J.

“…It is believed that atomic-scale surface steps cause defects in single-crystal films grown heteroepitaxially on SiC substrates. A method is described whereby…”
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Mechanical properties of 3C silicon carbide by Tong, Lijun, Mehregany, Mehran, Matus, Lawrence G.

“…The residual stress and Young's modulus of 3C silicon carbide (SiC) epitaxial films deposited on silicon substrates were measured by load-deflection…”
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2000 V 6H-SiC p - n junction diodes grown by chemical vapor deposition by Neudeck, Philip G., Larkin, David J., Powell, J. Anthony, Matus, Lawrence G., Salupo, Carl S.

“…In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide diodes to demonstrate rectification to reverse…”
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Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates by Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

“…3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side…”
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Vibrational spectra and a potential function for the monofluorocyclopropenyl-d0 and -d2 cations by Craig, Norman C, Lai, Ronnie K. Y, Matus, Lawrence G, Miller, J. Houston, Palfrey, Stephen L

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Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition by Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

“…The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n junction diodes are reported. These diodes, which were…”
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High voltage 6H-SiC rectifiers: prospects and progress by Neudeck, P.G., Larkin, D.J., Powell, J.A., Matus, L.G.

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Silicon carbide as a new micromechanics material by Lijun Tong, Mehregany, M., Matus, L.G.

“…Silicon carbide (SiC) is studied as a material for micromechanics because of its high-temperature microelectronics capabilities and excellent mechanical…”
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