Search Results - "Matulionis, A"

Hot phonons in GaN channels for HEMTs by Matulionis, A.

“…Accumulation of non‐equilibrium longitudinal optical (LO) phonons (termed hot phonons) is considered as a possible cause for limitation of hot‐electron drift…”
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Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure by Šermukšnis, E., Liberis, J., Šimukovič, A., Matulionis, A., Ding, K., Avrutin, V., Özgür, Ü., Morkoç, H.

“…Microwave noise is used to study high-electric-field electronic properties of ZnO channels with electron densities in the range from 1017 to 1019 cm–3. The…”
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InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes by Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., Özgür, Ü., Morkoç, H., Matulionis, A., Paskova, T., Mulholland, G., Evans, K. R.

“…Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence…”
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Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons by Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Liberis, J., Šermukšnis, E., Matulionis, A., Cheng, H., Kurdak, Ç.

“…We report on high electric field stress measurements at room temperature on InAlN/AlN/GaN heterostructure field effect transistor structures. The degradation…”
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Electron drift velocity in AlGaN/GaN channel at high electric fields by Ardaravičius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

“…Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift…”
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Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects by Zhu, C. Y., Wu, M., Kayis, C., Zhang, F., Li, X., Ferreyra, R. A., Matulionis, A., Avrutin, V., Özgür, Ü., Morkoç, H.

“…In15.7%Al84.3%N/AlN/GaN heterojunction field effect transistors have been electrically stressed under four different bias conditions: on-state-low-field…”
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On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer by Li, X., Zhang, F., Okur, S., Avrutin, V., Liu, S. J., Özgür, Ü., Morkoç, H., Hong, S. M., Yen, S. H., Hsu, T. S., Matulionis, A.

“…Efficiency and efficiency retention in InGaN LEDs has recently received considerable attention. In this realm, we investigated internal quantum efficiency…”
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The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes by Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., Özgür, Ü., Morkoç, H., Matulionis, A., Paskova, T., Mulholland, G., Evans, K. R.

“…The effect of hot electrons on electroluminescence of m ‐plane double heterostructure light emitting diodes (with a single 6 nm active layer of In0.20Ga0.80N)…”
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Novel fluctuation-based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors by Matulionis, A., Liberis, J., Matulionienė, I., Šermukšnis, E., Leach, J. H., Wu, M., Morkoç, H.

“…The fluctuation‐based technique has been used to shed light onto the physical processes responsible for the performance of nitride heterostructure field effect…”
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InAlN-barrier HFETs with GaN and InGaN channels by Liberis, J., Matulionienė, I., Matulionis, A., Šermukšnis, E., Xie, J., Leach, J. H., Morkoç, H.

“…Advantages and drawbacks of InN‐containing GaN‐based heterostructure field‐effect transistors (HFETs) are reviewed. The main attention is paid to fundamental…”
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Window for better reliability of nitride heterostructure field effect transistors by Matulionis, A., Liberis, J., Šermukšnis, E., Ardaravičius, L., Šimukovič, A., Kayis, C., Zhu, C.Y., Ferreyra, R., Avrutin, V., Özgür, Ü., Morkoç, H.

“…Phase-noise technique was applied to monitor channel degradation of nitride heterostructure field effect transistors (HFETs) subjected to a fixed drain voltage…”
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Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN by Ardaravicˇius, L., Liberis, J., Kiprijanovicˇ, O., Matulionis, A., Wu, M., Morkoç, H.

“…A nanosecond‐pulsed current–voltage technique was applied to study hot‐electron transport along the two‐dimensional electron gas channel confined at a…”
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Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors by Shimukovitch, A., Sakalas, P., Zampardi, P., Schroter, M., Matulionis, A.

“…The DC, RF and noise characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base layer widths and δ‐doped layer in the…”
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High frequency noise of epitaxial graphene grown on sapphire by Ardaravicˇius, L., Liberis, J., Šermukšnis, E., Matulionis, A., Hwang, J., Kwak, J. Y., Campbell, D., Alsalman, H. A., Eastman, L. F., Spencer, M. G.

“…Microwave noise technique is applied to study in‐plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected…”
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New twists in LEDs and HFETs based on nitride semiconductors by Leach, J. H., Ni, X., Lee, J., Özgür, Ü., Matulionis, A., Morkoç, H.

“…Despite notable progress in light‐emitting and charge transport devices based on GaN heterostructures containing In, there is still controversy as to the light…”
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Comparative analysis of hot-phonon effects in nitride and arsenide channels for HEMTs by Matulionis, A.

“…The cutoff frequency of a transistor is determined mainly by gate length and electron drift velocity. In general, the velocity reaches high values in a…”
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Hot-electron transport in 4H-SiC by Ardaravičius, L., Matulionis, A., Kiprijanovic, O., Liberis, J., Cha, H.-Y., Eastman, L. F., Spencer, M. G.

“…Nanosecond-pulsed technique is used to study hot-electron transport in donor-doped 4H-SiC ( n = 2 × 10 17 cm − 3 ) biased parallel to the basal plane. The…”
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Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels by Ardaravičius, L., Ramonas, M., Kiprijanovic, O., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Chen, X., Sun, Y. J.

“…Nanosecond‐pulsed current–voltage measurements were used to study hot‐electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN two‐dimensional electron gas…”
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Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors by Sakalas, P., Zirath, H.G., Litwin, A., Schroter, M., Matulionis, A.

“…Microwave noise performance of p and n-type MOSFETs fabricated on the same wafer was investigated in order to study the effect of the pad and gate parasitic…”
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Self-heating and microwave noise in AlGaN/GaN by Ardaravičius, L., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

“…Equivalent noise temperature and spectral intensity of current fluctuations at 10 GHz frequency are investigated for Al0.15Ga0.85N/GaN channels. Dependence on…”
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