Search Results - "Mattausch, M"

Analytical V th Modeling for Dual-Gate MOSFETs With Independent Gate Control by Ghosh, Soumajit, Miura-Mattausch, M., Iizuka, T., Rahaman, Hafizur, Mattausch, H. J.

“…We report a study on the threshold voltage ([Formula Omitted]) description for dual-gate MOSFETs with independent gate control, which provides the major…”
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Advanced Short-Channel-Effect Modeling With Applicability to Device Optimization-Potentials and Scaling by Avila Herrera, F., Hirano, Y., Miura-Mattausch, M., Iizuka, T., Kikuchihara, H., Mattausch, H. J., Ito, A.

“…Silicon-thickness scaling has been used as the main parameter for short-channel-effect (SCE) reduction. Nevertheless, SCEs are still present in advanced…”
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HiSIM_IGBT2: Modeling of the Dynamically Varying Balance Between MOSFET and BJT Contributions During Switching Operations by Tone, A., Miyaoku, Y., Miura-Mattausch, M., Kikuchihara, H., Feldmann, U., Saito, T., Mizoguchi, T., Yamamoto, T., Mattausch, H. J.

“…The second generation of the compact HiSIM_IGBT model for circuit simulation is reported. HiSIM_IGBT2 is developed on the basis of an adapted version of the…”
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Optimization of Low-Voltage-Operating Conditions for MG-MOSFETs by Ghosh, Soumajit, Miura-Mattausch, M., Iizuka, T., Rahaman, Hafizur, Mattausch, H. J.

“…Adaptive threshold-voltage controlling of thin-film multi-gate (MG) MOSFETs, using independent back-gate biasing, is applied for realizing latency and power…”
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Physically Based Compact Mobility Model for Organic Thin-Film Transistor by Maiti, T. K., Chen, L., Zenitani, H., Miyamoto, H., Miura-Mattausch, M., Mattausch, H. J.

“…A physically based compact mobility model for organic thin-film transistors (OTFTs) with an analysis of bias-dependent Fermi-energy (E F ) movement in the…”
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Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction by Miyaoku, Y., Tone, A., Matsuura, K., Miura-Mattausch, M., Mattausch, H. J., Ikoma, D.

“…The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as…”
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Compact Modeling of Multi-Gate MOSFETs for High-Power Applications by Herrera, F. Avila, Hirano, Y., Miura-Mattausch, M., Iizuka, T., Kikuchihara, H., Mattausch, H. J., Ito, A.

“…A compact multi-gate MOSFET model is developed for high-voltage applications. The model includes the short-channel effects specific for thin-film MOSFETs with…”
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HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation by Miura-Mattausch, M., Sadachika, N., Navarro, D., Suzuki, G., Takeda, Y., Miyake, M., Warabino, T., Mizukane, Y., Inagaki, R., Ezaki, T., Mattausch, H.J., Ohguro, T., Iizuka, T., Taguchi, M., Kumashiro, S., Miyamoto, S.

“…The compact MOSFET model development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced number of model…”
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A Surface Potential Based Organic Thin-Film Transistor Model for Circuit Simulation Verified With DNTT High Performance Test Devices by Maiti, T. K., Hayashi, T., Chen, L., Mori, H., Kang, M. J., Takimiya, K., Miura-Mattausch, M., Mattausch, H. J.

“…A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported…”
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Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel Effects by Sadachika, N., Kitamaru, D., Uetsuji, Y., Navarro, D., Yusoff, M.M., Ezaki, T., Mattausch, H.J., Miura-Mattausch, M.

“…The reported circuit simulation model Hiroshima University semiconductor technology academic research center IGFET model silicon-on-insulator (HiSIM-SOI) for…”
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A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis by Navarro, D., Takeda, Y., Miyake, M., Nakayama, N., Machida, K., Ezaki, T., Mattausch, H.J., Miura-Mattausch, M.

“…In this paper, a compact model of nonquasi-static (NQS) carrier-transport effects in MOSFETs is reported, which takes into account the carrier-response delay…”
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Modeling of electrostatically actuated fluid flow system for mixed-domain simulation by Maiti, T. K., Chen, L., Miyamoto, H., Miura-Mattausch, M., Mattausch, H. J.

“…Modeling of an electrically driven fluid flow system for multi-domain simulation is reported. The electrically driven actuator force is considered by an…”
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Compact modeling of GaN HEMT based on device-internal potential distribution by Okada, Y., Tanimoto, Y., Mizoguchi, T., Zenitani, H., Kikuchihara, H., Mattausch, H. J., Miura-Mattausch, M.

“…A compact model of GaN HEMT is developed, which solves the Poisson equations explicitly. The model includes all possible charges induced within the device…”
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Correlating Microscopic and Macroscopic Variation With Surface-Potential Compact Model by Mattausch, H.J., Sadachika, N., Yumisaki, A., Kaya, A., Imafuku, W., Johguchi, K., Koide, T., Miura-Mattausch, M.

“…Variation analysis of n-MOSFETs fabricated by different manufacturers at three technology nodes (180, 100, and 65 nm) demonstrates that surface-potential…”
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Measurement and modeling of IC self-heating including cooling system properties by Nishimura, T., Tanoue, H., Oodate, Y., Mattausch, H. J., Miura-Mattausch, M.

“…Heating and cooling mechanisms under actual IC-operating conditions are investigated experimentally and theoretically. For the investigation different chip…”
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Physically-based threshold voltage determination for MOSFET's of all gate lengths by Tsuno, M., Suga, M., Tanaka, M., Shibahara, K., Miura-Mattausch, M., Hirose, M.

“…A reliable method to determine the threshold voltage V/sub th/ for MOSFETs with gate length down to the sub-0.1 /spl mu/m region is proposed. The method…”
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Compact modeling and parameter extraction strategy of normally-on MOSFET by Umeda, T., Hirano, Y., Suzuki, D., Tone, A., Inoue, T., Kikuchihara, H., Miura-Mattausch, M., Mattausch, H. J.

“…The additional channel-dopant layer of normally-on MOSFETs leads to accumulation-layer current near channel surface and deeper-lying neutral-region current…”
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Limit of validity of the drift-diffusion approximation for simulation of photodiode characteristics by Konno, K., Matsushima, O., Navarro, D., Miura-Mattausch, M.

“…We have investigated the photoresponse of a Si p–n photodiode under different illumination and bias conditions. Under high illumination and low applied reverse…”
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Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors by Hosokawa, S., Navarro, D., Miura-Mattausch, M., Mattausch, H. J., Ohguro, T., Iizuka, T., Taguchi, M., Kumashiro, S., Miyamoto, S.

“…The high thermal-drain-noise coefficient γ for short-channel metal-oxide-semiconductor-field-effect transistors (MOSFETs) has little to do with hot electrons…”
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Unified complete MOSFET model for analysis of digital and analog circuits by Miura-Mattausch, M., Feldmann, U., Rahm, A., Bollu, M., Savignac, D.

“…In this paper, we describe a complete MOSFET model developed for circuit simulation based on fully consistent physical concept. The model describes all…”
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