Multiplicity and Lattice Relaxation of DX Center in AlGaAs:Si Studied by Electron Emission Spectra under Pressure

Multiplicity and Lattice Relaxation of DX Center in AlGaAs:Si Studied by Electron Emission Spectra under Pressure

DX center in Al 0.3 Ga 0.7 As:Si consists of four components, of which each component has the same thermal activation energy(0.41±0.02eV). The activation energy and emission-rate show no changes on pressure. One significant implication is that no lattice deformation occurs upon an electron emission....

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 32; no. S1; p. 255
Main Authors: Takarabe, Kenichi, Ashizawa, Hiroaki, Minomura, Shigeru, Kato, Hiromu, Watanabe, Yasutaka, Matsuda, Koichirou
Format: Journal Article
Language:English
Published: 01-01-1993
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Summary:DX center in Al 0.3 Ga 0.7 As:Si consists of four components, of which each component has the same thermal activation energy(0.41±0.02eV). The activation energy and emission-rate show no changes on pressure. One significant implication is that no lattice deformation occurs upon an electron emission.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.32S1.255