Search Results - "Matocha, K.S."

Determination of Lean Burn Combustion Temperature Using Ultraviolet Emission by Brown, D.M., Sandvik, P.M., Fedison, J.B., Hibshman, J., Matocha, K.S.

“…Measurements of the ultraviolet emission spectrum emitted from a lean burn premixed natural gas flame were taken over a range of flame temperatures using a…”
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Silicon carbide photodiode sensor for combustion control by Brown, D.M., Fedison, J.B., Hibshman, J.R., Kretchmer, J.W., Lombardo, L., Matocha, K.S., Sandvik, P.M.

“…A dual silicon carbide photodiode chip was developed to determine the temperature of a natural gas combustion flame. The concept uses the change in shape of…”
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Recent advances in silicon carbide MOSFET power devices by Stevanovic, L.D., Matocha, K.S., Losee, P.A., Glaser, J.S., Nasadoski, J.J., Arthur, S.D.

“…Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by…”
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Time-Dependent Dielectric Breakdown of 4H-SiC/[Formula Omitted] MOS Capacitors by Gurfinkel, M, Horst, J.C, Suehle, J.S, Bernstein, J.B, Shapira, Y, Matocha, K.S, Dunne, G, Beaupre, R.A

“…At fields higher than 8.5 MV/cm, the electric field acceleration parameter is about 4.6 cm/MV, indicating a different failure mechanism under high electric…”
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Time-Dependent Dielectric Breakdown of 4H-SiC/ \hbox MOS Capacitors by Gurfinkel, M., Horst, J.C., Suehle, J.S., Bernstein, J.B., Shapira, Y., Matocha, K.S., Dunne, G., Beaupre, R.A.

“…Time-dependent dielectric breakdown (TDDB) is one of the major issues concerning long-range reliability of dielectric layers in SiC-based high-power devices…”
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