A 1 mu m CMOS/SOI 64 K SRAM with 10 nA standby current

Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area resulting from mesa isolation is most evident in the very low standby current. An impressively high yield for first-pass material in a research wafer...

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Bibliographic Details
Published in:	IEEE SOS/SOI Technology Conference pp. 137 - 138
Main Authors:	Houston, T.W., Lu, H., Mei, P., Blake, T.G.W., Hite, L.R., Sundaresan, R., Matloubiam, M., Bailey, W.E., Liu, J., Peterson, A., Pollack, G.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1989
Subjects:	Capacitance CMOS technology DNA Fabrication Power dissipation Probes Production Random access memory Silicides Voltage
Online Access:	Get full text
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Summary:	Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area resulting from mesa isolation is most evident in the very low standby current. An impressively high yield for first-pass material in a research wafer fabrication area was obtained. Aspects of the design relating to the SOI characteristics are discussed and full characterization results are presented.< >
DOI:	10.1109/SOI.1989.69803