Search Results - "Matlashov, P. E."
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Protection against degradation of the edge contour in fast-ionization dynistors
Published in Instruments and experimental techniques (New York) (01-03-2017)“…The results of studying silicon semiconductor devices with nanosecond turning-on times, that is, fast-ionization dynistors (FIDs), are presented. The effect of…”
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Journal Article -
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Small switches of high-power microsecond pulses on the basis of high-voltage integrated pulse thyristors and reverse switch-on dynistors
Published in Instruments and experimental techniques (New York) (2017)“…A high-voltage switch on the basis of a small unit of series-connected high-voltage integrated pulse thyristors (HVIPTs), which were developed at the Ioffe…”
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Journal Article