Search Results - "Mates, Thomas E"
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Dopant solubility and charge compensation in La-doped SrSnO3 films
Published in Applied physics letters (07-10-2019)“…We investigate lanthanum (La) as an n-type dopant in the strain-stabilized tetragonal phase of SrSnO3 grown on GdScO3 (110) using a radical-based hybrid…”
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Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
Published in Journal of crystal growth (15-07-2009)“…In this study we investigated the incorporation of the dopants Si, Mg, and Fe and the unintentional impurities O and C in GaN films grown on m -plane ( 1 0 1 ¯…”
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3
Tethered tertiary amines as solid-state n-type dopants for solution-processable organic semiconductors
Published in Chemical science (Cambridge) (01-03-2016)“…A scarcity of stable n-type doping strategies compatible with facile processing has been a major impediment to the advancement of organic electronic devices…”
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4
Temperature Dependence of the Diffusion Coefficient of PCBM in Poly(3-hexylthiophene)
Published in Macromolecules (12-02-2013)“…Interest in new functional small molecule and polymer blends, such as polymer–fullerene bulk heterojunction (BHJ) organic solar cells motivates the development…”
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5
The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates
Published in Applied physics letters (23-03-2015)“…For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is…”
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Self-Diffusion of Supercooled Tris-naphthylbenzene
Published in The journal of physical chemistry. B (09-04-2009)“…We have measured self-diffusion coefficients for deeply supercooled tris-naphthylbenzene using secondary ion mass spectrometry. Isotopically labeled multilayer…”
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7
Stable glass transformation to supercooled liquid via surface-initiated growth front
Published in Physical review letters (13-02-2009)“…Highly stable glasses of tris-naphthylbenzene transform into a liquid when annealed above the glass transition temperature T_{g}. In contrast to the…”
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8
Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3
Published in Communications physics (11-11-2021)“…The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates…”
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9
Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine
Published in Crystals (Basel) (01-11-2021)“…The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable…”
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10
Publisher Correction: Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3
Published in Communications physics (07-04-2022)Get full text
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11
Bonding Structure of Phenylacetylene on Hydrogen-Terminated Si(111) and Si(100): Surface Photoelectron Spectroscopy Analysis and Ab Initio Calculations
Published in Langmuir (16-11-2010)“…Interfaces between phenylacetylene (PA) monolayers and two silicon surfaces, Si(111) and Si(100), are probed by X-ray photoelectron spectroscopy (XPS),…”
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12
Structure of Asymmetric Diblock Copolymers in Thin Films
Published in Macromolecules (07-03-2000)“…The structure of asymmetric poly(styrene-b-2-vinylpyridine) (PS-PVP) diblock copolymers allowed to order in a thin film is observed by a combination of…”
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13
200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β-Ga2O3 epitaxial drift layers
Published in Applied physics letters (28-10-2024)“…We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015…”
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14
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
Published in Applied physics letters (31-05-2021)“…Integration of nitrides with other material systems has recently become of interest due to the high performance of GaN-based high-electron mobility…”
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15
Response of the Lattice across the Filling-Controlled Mott Metal-Insulator Transition of a Rare Earth Titanate
Published in Physical review letters (02-11-2017)“…The lattice response of a prototype Mott insulator, SmTiO_{3}, to hole doping is investigated with atomic-scale spatial resolution. SmTiO_{3} films are doped…”
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16
Metals and the Integrity of a Biological Coating: The Cuticle of Mussel Byssus
Published in Langmuir (17-03-2009)“…The cuticle of mussel byssal threads is a robust natural coating that combines high extensibility with high stiffness and hardness. In this study, fluorescence…”
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17
pH-Dependent Friction of Polyacrylamide Hydrogels
Published in Tribology letters (01-12-2023)“…Polyacrylamide hydrogels are widely used in biomedical applications due to their tunable mechanical properties and charge neutrality. Our recent tribological…”
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Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities
Published in Applied physics letters (05-05-2014)“…ZrO2 dielectrics were grown on n-In0.53Ga0.47As channels by atomic layer deposition, after employing an in-situ cyclic nitrogen plasma/trimethylaluminum…”
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Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation
Published in APL materials (01-02-2023)“…Systems of spins engineered with tunable density and reduced dimensionality enable a number of advancements in quantum sensing and simulation. Defects in…”
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20
Schmitt Trigger Using a Self-Healing Ionic Liquid Gated Transistor
Published in Advanced materials (Weinheim) (01-06-2015)Get full text
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