Search Results - "Materano, Monica"

Polarization switching in thin doped HfO2 ferroelectric layers by Materano, Monica, Lomenzo, Patrick D., Mulaosmanovic, Halid, Hoffmann, Michael, Toriumi, Akira, Mikolajick, Thomas, Schroeder, Uwe

“…The deployment of ferroelectrics in device concepts such as Ferroelectric Random Access Memory and Ferroelectric Field Effect Transistors requires a good…”
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HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison by Materano, Monica, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe

“…In the last few years, hafnium oxide (HfO2), zirconium oxide (ZrO2), and their intermixed system (HfxZr1 − xO2) have aroused more and more interest due to…”
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A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2 by Lomenzo, Patrick D., Materano, Monica, Richter, Claudia, Alcala, Ruben, Mikolajick, Thomas, Schroeder, Uwe

“…The Gibbs energy can yield fundamental insight into the material properties of ferroelectrics such as energy barriers and phase transitions. Particularly for…”
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Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films by Baumgarten, Lutz, Szyjka, Thomas, Mittmann, Terence, Materano, Monica, Matveyev, Yury, Schlueter, Christoph, Mikolajick, Thomas, Schroeder, Uwe, Müller, Martina

“…We investigate the emerging chemical states of TiN/HfO2/TiN capacitors and focus especially on the identification of vacancies and impurities in the…”
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Many routes to ferroelectric HfO2: A review of current deposition methods by Hsain, Hanan Alexandra, Lee, Younghwan, Materano, Monica, Mittmann, Terence, Payne, Alexis, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N., Jones, Jacob L.

“…Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO2), researchers are still intensely fascinated by this material system…”
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Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium by Schroeder, Uwe, Materano, Monica, Mittmann, Terence, Lomenzo, Patrick D., Mikolajick, Thomas, Toriumi, Akira

“…Different causes for ferroelectric properties in hafnium oxide were discussed during the last decade including various dopants, stress, electrode materials,…”
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Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering by Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Park, Min Hyuk, Stolichnov, Igor, Cavalieri, Matteo, Zhou, Chuanzhen, Chung, Ching‐Chang, Jones, Jacob L., Szyjka, Thomas, Müller, Martina, Kersch, Alfred, Mikolajick, Thomas, Schroeder, Uwe

“…Thin film metal–insulator–metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The…”
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Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors by Mehmood, Furqan, Hoffmann, Michael, Lomenzo, Patrick D., Richter, Claudia, Materano, Monica, Mikolajick, Thomas, Schroeder, Uwe

“…After the discovery of ferroelectricity in HfO2, many dopants have been incorporated into the material to improve the ferroelectric properties. The binary…”
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Harnessing Phase Transitions in Antiferroelectric ZrO2 Using the Size Effect by Lomenzo, Patrick D., Materano, Monica, Mittmann, Terence, Buragohain, Pratyush, Gruverman, Alexei, Kiguchi, Takanori, Mikolajick, Thomas, Schroeder, Uwe

“…The unique nonlinear dielectric properties of antiferroelectric (AFE) oxides are promising for advancements in solid state supercapacitor, actuator, and memory…”
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1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline by Okuno, Jun, Kunihiro, Takafumi, Konishi, Kenta, Materano, Monica, Ali, Tarek, Kuehnel, Kati, Seidel, Konrad, Mikolajick, Thomas, Schroeder, Uwe, Tsukamoto, Masanori, Umebayashi, Taku

“…A novel system-on-a-chip compatible one-transistor one-capacitor ferroelectric random-access memory array (1T1C FeRAM) based on ferroelectric Hf 0.5 Zr 0.5 O 2…”
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Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications by Pesic, Milan, Larcher, Luca, Mikolajick, Thomas, Li, Taide, Di Lecce, Valerio, Hoffmann, Michael, Materano, Monica, Richter, Claudia, Max, Benjamin, Slesazeck, Stefan, Schroeder, Uwe

“…The discovery of ferroelectric (FE) properties in binary oxides has enabled CMOS compatible and scalable FE memories. Recently, we reported a simple approach…”
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Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling by Okuno, Jun, Kunihiro, Takafumi, Konishi, Kenta, Shuto, Yusuke, Sugaya, Fumitaka, Materano, Monica, Ali, Tarek, Lederer, Maximilian, Kuehnel, Kati, Seidel, Konrad, Mikolajick, Thomas, Schroeder, Uwe, Tsukamoto, Masanori, Umebayashi, Taku

“…We have reported that film thickness scaling of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) allows hafnium-based one- transistor and one-capacitor (1T1C)…”
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Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering by Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Park, Min Hyuk, Stolichnov, Igor, Cavalieri, Matteo, Zhou, Chuanzhen, Chung, Ching‐Chang, Jones, Jacob L., Szyjka, Thomas, Müller, Martina, Kersch, Alfred, Mikolajick, Thomas, Schroeder, Uwe

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The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors by Alcala, Ruben, Materano, Monica, Lomenzo, Patrick D., Vishnumurthy, Pramoda, Hamouda, Wassim, Dubourdieu, Catherine, Kersch, Alfred, Barrett, Nicolas, Mikolajick, Thomas, Schroeder, Uwe

“…Abstract Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible materials for next‐generation, non‐volatile memory devices…”
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Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2‐Based Films by Materano, Monica, Reinig, Peter, Kersch, Alfred, Popov, Maxim, Deluca, Marco, Mikolajick, Thomas, Boettger, Ulrich, Schroeder, Uwe

“…Inducing and detecting the polar orthorhombic phase are crucial for the establishment of ferroelectricity in HfO2‐ and ZrO2‐based thin films. Unfortunately,…”
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Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films by Hsain, Hanan Alexandra, Lee, Younghwan, Lancaster, Suzanne, Materano, Monica, Alcala, Ruben, Xu, Bohan, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N., Jones, Jacob L.

“…Hafnia–zirconia (HfO2–ZrO2) solid solution thin films have emerged as viable candidates for electronic applications due to their compatibility with Si…”
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SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2 by Okuno, Jun, Kunihiro, Takafumi, Konishi, Kenta, Maemura, Hideki, Shuto, Yusuke, Sugaya, Fumitaka, Materano, Monica, Ali, Tarek, Kuehnel, Kati, Seidel, Konrad, Schroeder, Uwe, Mikolajick, Thomas, Tsukamoto, Masanori, Umebayashi, Taku

“…This paper experimentally demonstrates fundamental memory array operation of a ferroelectric HfO 2 -based 1T1C FeRAM. Metal/ferroelectric/metal (MFM)…”
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Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material by Schroeder, Uwe, Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Edgington, Patrick, Lee, Young H., Alotaibi, Meshari, West, Anthony R., Mikolajick, Thomas, Kersch, Alfred, Jones, Jacob L.

“…Knowledge about phase transitions in doped HfO2 and ZrO2‐based films is crucial for developing future ferroelectric devices. These devices should perform in…”
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Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO 2 ‐Based Films by Materano, Monica, Reinig, Peter, Kersch, Alfred, Popov, Maxim, Deluca, Marco, Mikolajick, Thomas, Boettger, Ulrich, Schroeder, Uwe

“…Inducing and detecting the polar orthorhombic phase are crucial for the establishment of ferroelectricity in HfO 2 ‐ and ZrO 2 ‐based thin films…”
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Many routes to ferroelectric HfO2: A review of current deposition methods by Hsain, Hanan Alexandra, Lee, Younghwan, Materano, Monica, Mittmann, Terence, Payne, Alexis, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N., Jones, Jacob L.

“…Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO2), researchers are still intensely fascinated by this material system…”
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