Search Results - "Masunaga, Masahiro"

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  1. 1
    Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

    Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments by Masunaga, Masahiro, Sasago, Yoshitaka, Mori, Yuki, Hisamoto, Digh

    Published in Applied physics letters (22-01-2024)
    “…To estimate the failure time of silicon carbide (SiC) integrated circuits in harsh environments, the activation energy (Ea) and field acceleration factor of…”
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  2. 2
    The Performance of Operational Amplifiers Consisting of 4H-SiC CMOS After Gamma Irradiation

    The Performance of Operational Amplifiers Consisting of 4H-SiC CMOS After Gamma Irradiation by Masunaga, Masahiro, Sato, Shintaroh, Shima, Akio, Kuwana, Ryo

    Published in IEEE transactions on electron devices (01-01-2019)
    “…The operational amplifier was fabricated by 4H-SiC complementary MOS on the same die for sensors installed in nuclear power plants, and it showed over…”
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  3. 3
    Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs

    Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs by Masunaga, Masahiro

    Published in IEEE transactions on electron devices (01-06-2023)
    “…To design low-noise analog ICs for nuclear power plants, low-frequency noise (LFN) of 4H-SiC CMOS technology was studied in the frequency range of 3 Hz-10 kHz…”
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  4. 4
    4H-SiC CMOS Transimpedance Amplifier of Gamma-Irradiation Resistance Over 1 MGy

    4H-SiC CMOS Transimpedance Amplifier of Gamma-Irradiation Resistance Over 1 MGy by Masunaga, Masahiro, Sato, Shintaroh, Kuwana, Ryo, Sugii, Nobuyuki, Shima, Akio

    Published in IEEE transactions on electron devices (01-01-2020)
    “…A transimpedance amplifier (TIA)-with gamma-irradiation resistance of over 1 MGy-based on a novel 4H-SiC complementary MOS (CMOS) technology was fabricated…”
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  5. 5
    Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)

    Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001) by Chu, Qiao, Masunaga, Masahiro, Shima, Akio, Kita, Koji

    Published in Japanese Journal of Applied Physics (01-03-2024)
    “…The impact of mechanical uniaxial stress on electrical characteristics of 4H-SiC (0001) n-type MOSFET (n-MOSFET) was systematically investigated by a…”
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  6. 6
    Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

    Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment by Masunaga, Masahiro, Crescitelli, Viviana, Funaki, Tsuyoshi

    Published in Japanese Journal of Applied Physics (01-10-2020)
    “…Long-term thermal stability of specific contact resistance ( c) in cross-bridge Kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni2Si/4H-SiC layered structure, was…”
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  7. 7
    A low noise and low loss power MOSFET with low Vth regions for voltage regulators

    A low noise and low loss power MOSFET with low Vth regions for voltage regulators by Masunaga, Masahiro, Hashimoto, Takayuki, Kato, Kouichi, Andou, Hiroki, Numabe, Hideo, Tomizawa, Zen, Matsuura, Nobuyoshi

    “…A novel low voltage power MOSFET with a low threshold voltage (Vth) region (sub-MOS) is proposed. The proposed MOSFET has a superior trade-off relationship…”
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